onsemi 2N5401_S00Z

Overview

2N5401_S00Z from Fairchild Semiconductor is a PNP epitaxial silicon small-signal transistor rated for -150 V V_CEO, -600 mA I_C, 625 mW P_C, with h_FE = 30–240 at I_C = -1 mA to -50 mA, and f_T = 100–400 MHz - used in high-voltage amplifier and switching stages of telecom interface circuits and analog signal conditioning.

For engineers reviewing the 2N5401_S00Z datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP breakdown voltage margin (-150 V V_CEO), low saturation voltage (-0.2 V V_CE(sat) at -10 mA/-1 mA), noise figure (8 dB at 10 Hz–15.7 kHz), TO-92 mechanical compatibility, and junction temperature rating (150 °C).

Technical Context

The 2N5401_S00Z operates as a general-purpose PNP bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for linear amplification and moderate-speed switching. Its DC current gain exhibits strong I_C-dependence: h_FE = 30 (min) at -1 mA, rising to 60 (min) at -10 mA, then dropping to 50 (min) at -50 mA - indicating peak gain near mid-current range.

It delivers stable high-voltage operation with BVCBO = -160 V and BVCEO = -150 V under specified test conditions, while maintaining low output capacitance (C_ob = 6 pF at V_CB = -10 V), supporting RF-critical applications up to its f_T bandwidth limit. Saturation behavior is characterized at two drive levels: V_CE(sat) = -0.2 V (typ) at I_C/I_B = -10 mA/-1 mA, and -0.5 V (max) at -50 mA/-5 mA.

Key Specifications

Pinout & Package

2N5401_S00Z is housed in a standard TO-92 plastic package (3.86 mm × 1.27 mm × 4.58 mm body, lead pitch 1.27 mm), with leads arranged Emitter–Base–Collector (pin 1–2–3) when viewed with flat side facing outward and leads down.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP amplifier and switching applications.

Compared with MPSA92 and BC557B, the 2N5401_S00Z uniquely balances -150 V capability, 100+ MHz f_T, and TO-92 compatibility - making it optimal for mixed-signal systems needing both robustness and bandwidth in a legacy-standard package.

Availability

2N5401_S00Z is available at Aetrix Electronics and suitable for telecom line interface, audio preamplifier, and discrete logic inverter applications requiring stable component supply across long-lifecycle industrial programs.

Supply support for 2N5401_S00Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N5401_S00Z belongs to Fairchild's legacy general-purpose bipolar transistor family, designed for cost-sensitive, high-reliability analog and switching functions in industrial and communications equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401_S00Z?

The 2N5401_S00Z has a guaranteed minimum collector-emitter breakdown voltage (BV_CEO) of -150 V at I_C = -1 mA and I_B = 0. This rating is validated per Fairchild's Rev. B datasheet and applies under DC or pulse conditions meeting specified duty cycle limits. Operating above this voltage risks irreversible junction failure. The 2N5401_S00Z must be biased within this absolute maximum to ensure reliability.

Does the 2N5401_S00Z have a defined pinout configuration, and what is it?

Yes, the 2N5401_S00Z uses the standard TO-92 package with Emitter–Base–Collector pin assignment (pin 1–2–3) when viewed with the flat side facing forward and leads pointing downward. This matches the "suffix –C" designation in Fairchild documentation. The 2N5401_S00Z pinout is mechanically and electrically identical to industry-standard PNP TO-92 devices, enabling direct PCB layout reuse.

What is the typical current gain (h_FE) of the 2N5401_S00Z at different collector currents?

The 2N5401_S00Z exhibits h_FE = 30 (min) at I_C = -1 mA, 60 (min) at I_C = -10 mA, and 50 (min) at I_C = -50 mA - all measured at V_CE = -5 V and T_A = 25 °C. The 2N5401_S00Z datasheet confirms this non-monotonic trend, peaking near -10 mA. Designers should verify bias point stability using these min values across temperature.

Can the 2N5401_S00Z be used in high-frequency amplifier designs?

Yes - the 2N5401_S00Z has a current gain–bandwidth product (f_T) of 100–400 MHz under I_C = -10 mA, V_CE = -10 V conditions. This makes the 2N5401_S00Z suitable for VHF amplifiers, oscillator buffers, and broadband preamp stages up to ~100 MHz, provided layout parasitics and bias stability are controlled. Its 6 pF C_ob further supports high-frequency matching.

Is the 2N5401_S00Z RoHS-compliant and halogen-free?

The original 2N5401_S00Z release predates mandatory RoHS compliance (2006), and Fairchild's Rev. B datasheet does not declare RoHS or halogen-free status. Current production versions supplied by Aetrix Electronics meet RoHS Directive 2011/65/EU and JEDEC JS709E halogen-free requirements. Always verify the date code and packaging label on the 2N5401_S00Z reel or tube to confirm compliance for new designs.