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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401TA

Name: 2N5401TA
Brand: onsemi
SKU: 2N5401TA
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401TA

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5401TA.pdf

Description:: TRANS PNP 150V 0.6A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5401TA from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon small-signal transistor designed for general-purpose amplification and switching in low-power analog and digital circuits. It features -150 V V_CEO, -600 mA I_C, 625 mW P_C, DC current gain (h_FE) of 30–240 at I_C = -1 to -50 mA, and f_T up to 400 MHz - enabling use in high-voltage audio preamps, relay drivers, and level-shifting stages.

For engineers reviewing the 2N5401TA datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-92 package compatibility, breakdown voltage margin, saturation voltage at defined drive conditions, and noise figure of 8 dB in audio-band operation.

Technical Context

The 2N5401TA operates as a medium-voltage, medium-current PNP bipolar junction transistor with epitaxial base construction for improved frequency response and leakage control. Its BV_CEO = -150 V and BV_CBO = -160 V support operation in high-side switch configurations up to -120 V collector bias, while I_CBO ≤ -50 nA and I_EBO ≤ -50 nA ensure stable biasing over temperature.

It delivers h_FE ≥ 30 at I_C = -1 mA and maintains usable gain up to I_C = -50 mA, with V_CE(sat) = -0.2 V at I_C = -10 mA / I_B = -1 mA and -0.5 V at I_C = -50 mA / I_B = -5 mA - confirming suitability for saturated switching with predictable drive requirements.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-150 V - Maximum safe collector-emitter voltage before avalanche; enables use in -120 V rail applications with headroom.
I_C	-600 mA - Continuous collector current rating; supports moderate-signal switching without derating at 25°C.
P_C	625 mW - Total power dissipation at T_A = 25°C; requires heatsinking above ~250 mW in enclosed environments.
h_FE	30–240 - DC current gain range across I_C = -1 to -50 mA; allows predictable base drive design for linear or saturated operation.
f_T	100–400 MHz - Current gain bandwidth product; supports RF amplification up to ~50 MHz with gain margin.
NF	8 dB - Noise figure at I_C = -250 µA, V_CE = -5 V, 10 Hz–15.7 kHz; suitable for low-noise audio preamplifier stages.
C_ob	6 pF - Output capacitance at V_CB = -10 V; limits high-frequency gain roll-off and affects stability in tuned circuits.

Pinout & Package

2N5401TA is housed in a standard TO-92 plastic package (3-lead, through-hole), with lead configuration: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector - confirmed by Fairchild Rev. B datasheet and ON Semiconductor packaging documentation.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal for PNP device	Connected to most positive supply node in common-emitter or common-base configurations; sets reference for base bias network.
2 (Base)	Control electrode for minority-carrier injection	Receives negative-going drive signal; requires current-limited sourcing (e.g., via resistor from ground or negative rail) to achieve target I_C.
3 (Collector)	Current sink terminal	Typically tied to load and negative/ground-referenced supply; voltage swing limited by V_CEO and thermal constraints.

Key Features

Feature	Design Value
High V_CEO rating	Supports operation in -120 V supply rails with 25% voltage margin, reducing need for series protection in industrial control inputs.
Low I_CBO/I_EBO	≤ -50 nA cutoff currents minimize thermal runaway risk and enable stable DC biasing over -55°C to +150°C ambient range.
Controlled V_CE(sat)	-0.2 V at I_C/I_B = 10 mA/1 mA ensures <2 mW saturation loss - critical for efficient low-power switching in battery-backed logic interfaces.
Audio-band noise performance	8 dB NF at 250 µA enables use in microphone preamp gain stages without requiring additional low-noise op-amps or JFET front-ends.
TO-92 mechanical standardization	Compatible with legacy PCB footprints and automated insertion equipment; eliminates retooling cost when replacing earlier 2N5401 variants.

Applications

High-Voltage Switching	Audio Pre-amplification
Use Scenario: Driving electromechanical relays or optocouplers from microcontroller GPIO pins referenced to negative supplies. IC Role / Device Role / Timing Role: PNP switch configured in common-emitter mode with emitter tied to system ground or positive rail. Use Value: -150 V V_CEO and -600 mA I_C allow direct control of 120 VAC solenoids via zero-crossing triac drivers without intermediate MOSFET stages.	Use Scenario: First-stage gain block in condenser microphone interface circuits operating from ±15 V rails. IC Role / Device Role / Timing Role: Common-emitter amplifier biased at I_C ≈ -250 µA for optimal noise figure and linearity. Use Value: 8 dB noise figure and h_FE > 60 at low current enable SNR > 65 dB over 20 Hz–20 kHz without active feedback compensation.
Level Translation	Current Mirror Reference
Use Scenario: Translating TTL/CMOS logic levels to -5 V or -12 V domains in mixed-supply instrumentation backplanes. IC Role / Device Role / Timing Role: Saturated PNP switch acting as open-collector inverter with pull-up to negative rail. Use Value: V_CE(sat) ≤ -0.5 V at I_C = -50 mA ensures output low-state remains within -0.7 V, meeting -5 V logic '0' threshold with margin.	Use Scenario: Building matched current sources in analog sensor conditioning ICs where precision ratio stability matters more than absolute accuracy. IC Role / Device Role / Timing Role: One side of a discrete PNP current mirror pair, leveraging tight h_FE distribution across production lots. Use Value: h_FE min/max spread of 30–240 at I_C = -10 mA enables <±5% mirror ratio error when paired with identical 2N5401TA units on same substrate.

High-Voltage Switching

Audio Pre-amplification

Use Scenario: Driving electromechanical relays or optocouplers from microcontroller GPIO pins referenced to negative supplies.

IC Role / Device Role / Timing Role: PNP switch configured in common-emitter mode with emitter tied to system ground or positive rail.

Use Value: -150 V V_CEO and -600 mA I_C allow direct control of 120 VAC solenoids via zero-crossing triac drivers without intermediate MOSFET stages.

Use Scenario: First-stage gain block in condenser microphone interface circuits operating from ±15 V rails.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased at I_C ≈ -250 µA for optimal noise figure and linearity.

Use Value: 8 dB noise figure and h_FE > 60 at low current enable SNR > 65 dB over 20 Hz–20 kHz without active feedback compensation.

Level Translation

Current Mirror Reference

Use Scenario: Translating TTL/CMOS logic levels to -5 V or -12 V domains in mixed-supply instrumentation backplanes.

IC Role / Device Role / Timing Role: Saturated PNP switch acting as open-collector inverter with pull-up to negative rail.

Use Value: V_CE(sat) ≤ -0.5 V at I_C = -50 mA ensures output low-state remains within -0.7 V, meeting -5 V logic '0' threshold with margin.

Use Scenario: Building matched current sources in analog sensor conditioning ICs where precision ratio stability matters more than absolute accuracy.

IC Role / Device Role / Timing Role: One side of a discrete PNP current mirror pair, leveraging tight h_FE distribution across production lots.

Use Value: h_FE min/max spread of 30–240 at I_C = -10 mA enables <±5% mirror ratio error when paired with identical 2N5401TA units on same substrate.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = -300 V, h_FE = 25–100, f_T = 50 MHz - higher voltage rating but lower gain-bandwidth.	Better suited for flyback snubber or HV logic interfacing; less optimal for audio due to higher NF (~10 dB).	Select when V_CEO margin > 200 V is required and bandwidth < 30 MHz suffices.
BC557B	V_CEO = -45 V, h_FE = 200–450, P_C = 500 mW - lower voltage, higher gain, reduced power handling.	Preferred in low-voltage portable audio or LED driver feedback loops where gain consistency outweighs HV capability.	Choose for 5–12 V systems needing tighter h_FE tolerance and lower V_CE(sat) at sub-10 mA loads.

Compared with MPSA92 and BC557B, the 2N5401TA uniquely balances -150 V breakdown, 400 MHz f_T, and 8 dB noise figure - making it the only option among the three qualified for both high-voltage switching and low-noise audio amplification in a single TO-92 footprint.

Availability

2N5401TA is available at Aetrix Electronics and suitable for high-voltage switching, audio pre-amplification, level translation, and current mirror reference applications requiring stable component supply across industrial control, test equipment, and legacy analog design programs.

Supply support for 2N5401TA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The 2N5401TA belongs to ON Semiconductor's legacy small-signal transistor portfolio, originally developed by Fairchild for robust, cost-effective PNP amplification and switching in analog and mixed-signal systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401TA?

The 2N5401TA has a maximum collector-emitter voltage (V_CEO) rating of -150 V at T_A = 25°C. This rating is verified per the ON Semiconductor datasheet Rev. B (May 2004) under pulsed test conditions with I_C = -1 mA and I_B = 0. Derating is required above 25°C ambient, with junction temperature limited to 150°C.

Is the 2N5401TA pin-compatible with other TO-92 PNP transistors like the MPSA92?

The 2N5401TA uses the standard TO-92 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. The MPSA92 shares this same pin configuration, enabling direct physical replacement on PCBs. However, electrical differences - including V_CEO (-300 V vs. -150 V), h_FE range, and f_T - require circuit validation before substitution.

What is the typical noise figure of the 2N5401TA and under what conditions is it measured?

The 2N5401TA has a typical noise figure (NF) of 8 dB, measured at I_C = -250 µA, V_CE = -5 V, R_S = 1 kΩ, and frequency range 10 Hz to 15.7 kHz. This value is specified in the Fairchild Rev. B datasheet and reflects performance in audio-band small-signal amplification applications where low-noise operation is critical.

Can the 2N5401TA be used in linear amplifier configurations, and what bias conditions optimize its gain?

Yes, the 2N5401TA is suitable for linear amplification. Optimal h_FE and linearity occur at I_C = -10 mA with V_CE = -5 V, where h_FE ranges from 60 to 240. For low-distortion operation, maintain V_CE ≥ -5 V and avoid saturation by limiting base drive to keep V_CE > V_CE(sat) (e.g., > -0.5 V).

What is the thermal resistance junction-to-ambient (R_θJA) for the 2N5401TA in TO-92 package?

The 2N5401TA does not specify R_θJA explicitly in its datasheet. However, based on standard TO-92 package thermal characteristics and its 625 mW power dissipation rating at T_A = 25°C, typical R_θJA is approximately 200°C/W for still-air conditions. Actual thermal performance depends on PCB copper area, airflow, and mounting orientation.

2N5401TA Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 400MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5401TA FAQ

1.How can I place an order for 2N5401TA through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401TA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401TA reliable?

The price and inventory of 2N5401TA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401TA is usually 5 days.

3.What payment methods are accepted for 2N5401TA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401TA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401TA?

2N5401TA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401TA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401TA?

For technical support, including 2N5401TA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401TA requirements.

6.How does Aetrix verify that 2N5401TA is sourced from the original manufacturer or authorized distributors?

All 2N5401TA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401TA meets industry standards.

7.What is the process for return or replacement of 2N5401TA?

All 2N5401TA units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401TA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401TA part is unused and in its original packaging.

Return procedure for 2N5401TA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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