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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401TF

Name: 2N5401TF
Brand: onsemi
SKU: 2N5401TF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401TF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5401TF.pdf

Description:: TRANS PNP 150V 0.6A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5401TF from Fairchild Semiconductor is a PNP epitaxial silicon small-signal transistor rated for -150 V V_CEO, -600 mA I_C, 625 mW P_C, with h_FE = 30–240 at I_C = -1 to -50 mA, and f_T = 100–400 MHz - used in high-voltage amplifier and switching stages of telecom interface circuits and relay drivers.

For engineers reviewing the 2N5401TF datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP breakdown voltage margin, saturation voltage under defined I_B/I_C conditions, noise figure at audio frequencies, TO-92 thermal derating behavior, and h_FE consistency across collector current range.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with DC current gain (h_FE) specified at three collector current points (-1 mA, -10 mA, -50 mA) under fixed V_CE = -5 V. Its f_T of 100–400 MHz supports RF amplification up to low-VHF band when biased appropriately.

Breakdown voltages are characterized with tightly controlled leakage conditions: BVCBO at I_C = -100 µA, BVCEO at I_C = -1 mA, and BVEBO at I_E = -10 µA. Saturation parameters V_CE(sat) and V_BE(sat) are measured at two drive levels to confirm switching performance in digital logic interfaces.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-150 V - maximum safe collector-emitter reverse bias before avalanche conduction in switching applications
I_C	-600 mA - absolute max continuous collector current; design limit for linear amplifiers is typically ≤300 mA at T_A = 25°C
P_C	625 mW - total package power dissipation at 25°C ambient; derates linearly above 25°C per TO-92 thermal resistance
h_FE	30–240 - DC current gain range across -1 mA to -50 mA I_C; critical for bias stability in Class-A amplifiers
f_T	100–400 MHz - unity-gain frequency defining upper usable bandwidth for small-signal amplification
NF	8 dB - noise figure at 250 µA I_C, 5 V V_CE, 1 kHz–15.7 kHz bandwidth; relevant for audio preamp stages
C_ob	6 pF - output capacitance at V_CB = -10 V; impacts high-frequency gain roll-off and oscillator phase noise

Pinout & Package

2N5401TF is housed in a standard TO-92 plastic package with 3 leads. Lead identification follows the "Emitter-Base-Collector" sequence (pin 1 = E, pin 2 = B, pin 3 = C), confirmed by Fairchild's mechanical drawing and device marking convention.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current sink terminal for PNP operation	Connected to most positive rail in common-base or common-collector configurations; sets reference for V_EB bias
2 (Base)	Control electrode for minority-carrier injection	Requires negative current relative to emitter to turn on; input impedance ~1–10 kΩ in active region
3 (Collector)	Main current output terminal	Carries amplified emitter current minus base current; reverse-biased during normal operation in amplifier mode

Key Features

Feature	Design Value
High V_CEO rating	Supports operation in -150 V rail systems without external clamping, reducing component count in HV analog front-ends
Low V_CE(sat)	-0.2 V at I_C = -10 mA / I_B = -1 mA enables efficient saturated switching in discrete logic level translators
Wide h_FE range	30–240 allows predictable gain setting across production lots when used with emitter degeneration resistors
Low noise figure	8 dB at audio frequencies makes it suitable for low-level signal amplification where op-amps are impractical
TO-92 compatibility	Standard footprint enables drop-in replacement in legacy designs using 2N3906, MPSA92, or BC557 footprints

Applications

Telecom Line Interface	Relay Driver Stage
Use Scenario: Amplifying and conditioning analog voice signals in DSL line cards prior to codec sampling. IC Role / Device Role / Timing Role: PNP small-signal amplifier operating in Class-A with emitter degeneration for linearity. Use Value: -150 V V_CEO withstands induced lightning surges; 8 dB NF preserves SNR in upstream channel.	Use Scenario: Driving electromagnetic relays requiring >100 mA coil current from microcontroller GPIO pins. IC Role / Device Role / Timing Role: Saturated switch with forced β = 10 to ensure full relay actuation under worst-case h_FE. Use Value: -0.2 V V_CE(sat) minimizes power loss and self-heating; TO-92 fits compact PCB layouts.
Discrete Audio Preamp	High-Voltage Level Shifter
Use Scenario: First-stage gain block in battery-powered guitar effects pedals handling instrument-level signals. IC Role / Device Role / Timing Role: Common-emitter amplifier biased at I_C = -250 µA for ultra-low current draw and low noise. Use Value: 8 dB NF at 250 µA ensures clean signal amplification; h_FE ≥ 60 maintains gain stability.	Use Scenario: Translating 3.3 V logic outputs to control -48 V telephony backplane circuits. IC Role / Device Role / Timing Role: Inverting level shifter with emitter tied to -48 V rail and base driven via current-limiting resistor. Use Value: -160 V V_CBO prevents breakdown during transient overshoot; TO-92 simplifies isolation layout.

Telecom Line Interface

Relay Driver Stage

Use Scenario: Amplifying and conditioning analog voice signals in DSL line cards prior to codec sampling.

IC Role / Device Role / Timing Role: PNP small-signal amplifier operating in Class-A with emitter degeneration for linearity.

Use Value: -150 V V_CEO withstands induced lightning surges; 8 dB NF preserves SNR in upstream channel.

Use Scenario: Driving electromagnetic relays requiring >100 mA coil current from microcontroller GPIO pins.

IC Role / Device Role / Timing Role: Saturated switch with forced β = 10 to ensure full relay actuation under worst-case h_FE.

Use Value: -0.2 V V_CE(sat) minimizes power loss and self-heating; TO-92 fits compact PCB layouts.

Discrete Audio Preamp

High-Voltage Level Shifter

Use Scenario: First-stage gain block in battery-powered guitar effects pedals handling instrument-level signals.

IC Role / Device Role / Timing Role: Common-emitter amplifier biased at I_C = -250 µA for ultra-low current draw and low noise.

Use Value: 8 dB NF at 250 µA ensures clean signal amplification; h_FE ≥ 60 maintains gain stability.

Use Scenario: Translating 3.3 V logic outputs to control -48 V telephony backplane circuits.

IC Role / Device Role / Timing Role: Inverting level shifter with emitter tied to -48 V rail and base driven via current-limiting resistor.

Use Value: -160 V V_CBO prevents breakdown during transient overshoot; TO-92 simplifies isolation layout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = -300 V, h_FE = 25–300, P_C = 625 mW, same TO-92	Higher breakdown margin suits telecom surge protection; wider h_FE spread requires tighter bias design	Preferred when >-150 V headroom is required; verify base drive strength for same I_C target
BC557B	V_CEO = -45 V, h_FE = 200–450, P_C = 500 mW, same pinout	Lower voltage rating limits use to ≤-30 V rails; higher h_FE improves current gain but reduces bandwidth	Select only for low-voltage, high-gain audio stages where f_T > 100 MHz is not required

Compared with 2N5401TF, MPSA92 offers greater voltage safety margin at identical power and package, while BC557B trades voltage capability for higher DC gain and lower noise - making 2N5401TF the balanced choice for general-purpose -150 V amplifier/switch roles.

Availability

2N5401TF is available at Aetrix Electronics and suitable for telecom line interface, relay driver, discrete audio preamp, and high-voltage level shifter applications requiring stable component supply across industrial and embedded production cycles.

Supply support for 2N5401TF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N5401TF belongs to Fairchild's legacy general-purpose PNP transistor product line, designed for robust high-voltage linear amplification and switching in telecom, industrial control, and audio equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401TF?

The 2N5401TF has a guaranteed minimum collector-emitter breakdown voltage (BV_CEO) of -150 V at I_C = -1 mA and T_A = 25°C. This rating is validated per Fairchild's Rev. B datasheet and defines the absolute maximum reverse bias the device can withstand before entering avalanche conduction in common-emitter configuration.

Does the 2N5401TF have a documented noise figure specification?

Yes, the 2N5401TF has a specified noise figure of 8 dB, measured at I_C = -250 µA, V_CE = -5 V, R_S = 1 kΩ, and frequency range 10 Hz to 15.7 kHz. This value appears in the "Electrical Characteristics" table of the official Fairchild datasheet and applies directly to low-frequency amplifier design.

What is the pin configuration of the 2N5401TF in its TO-92 package?

The 2N5401TF uses the standard TO-92 lead arrangement: Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - confirmed by Fairchild's mechanical drawing and consistent with the "-C" suffix notation indicating "Counter Collector" orientation. This matches the pinout of 2N3906 and MPSA92 devices.

Can the 2N5401TF be used as a direct replacement for the 2N3906 in existing designs?

The 2N5401TF is not a direct replacement for the 2N3906 due to significant differences: 2N3906 has V_CEO = -40 V and h_FE = 100–300, while 2N5401TF offers V_CEO = -150 V and h_FE = 30–240. Substitution is only valid if the circuit operates below -40 V and tolerates lower minimum h_FE.

What is the typical current gain bandwidth product (f_T) of the 2N5401TF?

The 2N5401TF has a current gain bandwidth product (f_T) ranging from 100 MHz (minimum) to 400 MHz (typical), measured at I_C = -10 mA, V_CE = -10 V, and f = 100 MHz. This parameter is explicitly listed in the "Electrical Characteristics" table of the Fairchild datasheet and defines its small-signal high-frequency amplification limit.

2N5401TF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 400MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5401TF FAQ

1.How can I place an order for 2N5401TF through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401TF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401TF reliable?

The price and inventory of 2N5401TF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401TF is usually 5 days.

3.What payment methods are accepted for 2N5401TF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401TF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401TF?

2N5401TF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401TF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401TF?

For technical support, including 2N5401TF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401TF requirements.

6.How does Aetrix verify that 2N5401TF is sourced from the original manufacturer or authorized distributors?

All 2N5401TF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401TF meets industry standards.

7.What is the process for return or replacement of 2N5401TF?

All 2N5401TF units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401TF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401TF part is unused and in its original packaging.

Return procedure for 2N5401TF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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