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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401ZL1

Name: 2N5401ZL1
Brand: onsemi
SKU: 2N5401ZL1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401ZL1

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N5401ZL1.pdf

Description:: TRANS PNP 150V 0.6A TO92

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5401ZL1 from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 150 V, I_C = 600 mA, and P_D = 625 mW at T_A = 25°C. It delivers h_FE = 50–240 (at I_C = 1–50 mA), f_T = 300 MHz, and V_CE(sat) ≤ 0.5 V, commonly used in high-voltage linear amplification and switching stages of discrete audio preamps and power supply control circuits.

For engineers reviewing the 2N5401ZL1 datasheet, pinout, applications, or equivalent options, key selection criteria include its 150 V V_CEO, TO-92 leaded package compatibility with through-hole prototyping, low-noise performance (NF ≤ 8.0 dB), and thermal resistance R_JA = 200 °C/W for ambient-limited biasing.

Technical Context

This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with verified DC current gain spanning 50–240 across collector currents from 1 mA to 50 mA. Its breakdown ratings-V_(BR)CEO = 150 V, V_(BR)CBO = 160 V, and V_(BR)EBO = 5.0 V-support high-side switching and voltage amplification where emitter-referenced biasing is required.

The device exhibits f_T = 300 MHz at I_C = 10 mA and V_CE = 10 V, with C_obo = 6.0 pF and small-signal h_fe = 40–200, confirming suitability for RF-coupled preamplifier stages up to VHF. Saturation behavior is characterized by V_CE(sat) ≤ 0.5 V at I_C/I_B = 10, enabling efficient use in discrete logic-level translators.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	150 Vdc - supports high-voltage amplifier output stages without breakdown at common-emitter configuration.
I_C (max)	600 mAdc - enables drive capability for medium-current loads such as relay coils or LED arrays.
P_D @ T_A=25°C	625 mW - defines maximum continuous dissipation in free-air mounting; derates 5.0 mW/°C above 25°C.
h_FE range	50–240 - ensures predictable DC bias stability across production lots and temperature (−55°C to +150°C).
f_T	300 MHz - validates usable bandwidth for VHF preamplifiers and narrowband RF signal conditioning.
R_JA	200 °C/W - determines junction temperature rise under ambient convection cooling; critical for thermal margin calculation.

Pinout & Package

2N5401ZL1 uses the standard TO-92 package (Case 29-11, Style 1), with 3 leads in straight-line configuration and Pb-free plating per onsemi's RoHS-compliant manufacturing.

Pin/Terminal	Circuit Role	Design Meaning
1	Emitter	Reference node for PNP current flow; connects to most positive rail in common-base or common-collector configurations.
2	Base	Control terminal requiring negative bias relative to emitter to enable conduction; typical I_B = 1–5 mA for saturation.
3	Collector	Output current sink; reverse-biased during cutoff; handles up to 150 V potential swing in active mode.

Key Features

Feature	Design Value
High V_CEO rating	150 V enables use in flyback snubbers and high-side switch drivers where 100 V+ rails are present.
Low noise figure	NF ≤ 8.0 dB at I_C = 250 µA supports low-distortion audio preamp stages without added filtering.
Wide h_FE range	50–240 allows robust DC bias design across temperature and process variation without feedback trimming.
TO-92 mechanical standardization	Compatible with legacy socketing, wave soldering, and manual rework workflows in industrial repair and prototyping.

Applications

Audio Preamp Stage	High-Voltage Switch Driver
Use Scenario: Discrete Class-A voltage amplifier in microphone preamplifier front-end with ±15 V rails. IC Role / Device Role / Timing Role: PNP small-signal amplifier providing 20–30 dB gain with minimal harmonic distortion. Use Value: V_CEO = 150 V and NF ≤ 8.0 dB ensure headroom and SNR preservation before op-amp input stage.	Use Scenario: High-side switch controlling 120 V AC relay coil via optocoupler-isolated base drive. IC Role / Device Role / Timing Role: PNP switch operating in saturation/cutoff to isolate control logic from mains-referenced load. Use Value: V_(BR)CBO = 160 V and I_C = 600 mA allow safe operation with 120 V transients and 400 mA steady-state coil current.
Linear Power Supply Pass Element	Discrete Logic Level Translator
Use Scenario: Emitter-follower pass transistor in adjustable linear regulator delivering 0–30 V, 500 mA output. IC Role / Device Role / Timing Role: Series-pass PNP element regulating output by modulating base-emitter voltage. Use Value: P_D = 625 mW and R_JA = 200 °C/W define thermal limits for heatsinkless operation up to ~2 W dissipation.	Use Scenario: Bidirectional level shifter between 3.3 V microcontroller GPIO and 12 V automotive sensor interface. IC Role / Device Role / Timing Role: PNP-based open-emitter translator enabling voltage translation without active pull-up. Use Value: V_BE(sat) ≤ 1.0 V and h_FE ≥ 50 ensure reliable switching at 1–10 mA base drive with <100 ns propagation delay.

Audio Preamp Stage

High-Voltage Switch Driver

Use Scenario: Discrete Class-A voltage amplifier in microphone preamplifier front-end with ±15 V rails.

IC Role / Device Role / Timing Role: PNP small-signal amplifier providing 20–30 dB gain with minimal harmonic distortion.

Use Value: V_CEO = 150 V and NF ≤ 8.0 dB ensure headroom and SNR preservation before op-amp input stage.

Use Scenario: High-side switch controlling 120 V AC relay coil via optocoupler-isolated base drive.

IC Role / Device Role / Timing Role: PNP switch operating in saturation/cutoff to isolate control logic from mains-referenced load.

Use Value: V_(BR)CBO = 160 V and I_C = 600 mA allow safe operation with 120 V transients and 400 mA steady-state coil current.

Linear Power Supply Pass Element

Discrete Logic Level Translator

Use Scenario: Emitter-follower pass transistor in adjustable linear regulator delivering 0–30 V, 500 mA output.

IC Role / Device Role / Timing Role: Series-pass PNP element regulating output by modulating base-emitter voltage.

Use Value: P_D = 625 mW and R_JA = 200 °C/W define thermal limits for heatsinkless operation up to ~2 W dissipation.

Use Scenario: Bidirectional level shifter between 3.3 V microcontroller GPIO and 12 V automotive sensor interface.

IC Role / Device Role / Timing Role: PNP-based open-emitter translator enabling voltage translation without active pull-up.

Use Value: V_BE(sat) ≤ 1.0 V and h_FE ≥ 50 ensure reliable switching at 1–10 mA base drive with <100 ns propagation delay.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP amplifier transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, h_FE = 25–300, f_T = 50 MHz - higher breakdown but lower bandwidth.	Preferred in ultra-high-voltage snubber or relay driver where >200 V margin is mandatory.	Select when V_CEO > 180 V is required; avoid if f_T > 200 MHz needed.
BC557B	V_CEO = 45 V, h_FE = 200–450, P_D = 500 mW - lower voltage rating but tighter h_FE binning.	Suitable for low-voltage portable audio or battery-powered logic interfaces.	Choose for cost-sensitive, low-power designs below 50 V; not acceptable for 120 V+ systems.

Compared with MPSA92 and BC557B, the 2N5401ZL1 offers balanced trade-offs: sufficient 150 V rating for industrial line-powered circuits, 300 MHz f_T for wideband analog use, and TO-92 compatibility with existing layouts-making it optimal for mid-voltage, medium-bandwidth discrete amplifier and switch applications.

Availability

2N5401ZL1 is available at Aetrix Electronics and suitable for high-voltage amplifier design, discrete switching power supplies, and industrial sensor interface circuits requiring stable component supply and long-term manufacturability.

Supply support for 2N5401ZL1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5401ZL1 belongs to onsemi's legacy discrete transistor product line, designed specifically for general-purpose PNP amplification and switching in cost-sensitive, reliability-critical industrial and audio applications.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401ZL1?

The 2N5401ZL1 has a guaranteed minimum V_(BR)CEO of 150 Vdc at I_C = 1.0 mAdc and I_B = 0. This rating defines the absolute maximum voltage the device can withstand in common-emitter configuration before breakdown. Operation above this value risks irreversible damage, and derating is recommended for long-term reliability in high-temperature environments.

Is the 2N5401ZL1 RoHS-compliant and lead-free?

Yes, the 2N5401ZL1 is manufactured with Pb-free terminations per onsemi's RoHS compliance program. The "G" suffix (e.g., 2N5401ZL1G) explicitly denotes Pb-free packaging, but the base 2N5401ZL1 part also conforms to JEDEC J-STD-609 Category 1 requirements as confirmed in the official ordering information table and package marking documentation.

What is the thermal resistance junction-to-ambient (R_JA) for the 2N5401ZL1 in TO-92 package?

The 2N5401ZL1 has a specified R_JA of 200 °C/W when mounted on a standard FR-4 PCB with no heatsink and natural convection cooling. This value assumes the device is soldered with standard pad geometry and is used to calculate junction temperature rise: T_J = T_A + (P_D × R_JA). Derating begins at 5.0 mW/°C above 25°C ambient.

Does the 2N5401ZL1 have a specified noise figure, and under what conditions?

Yes, the 2N5401ZL1 has a maximum noise figure (NF) of 8.0 dB, measured at I_C = 250 µAdc, V_CE = 5.0 Vdc, R_S = 1.0 kΩ, and f = 1.0 kHz. This parameter confirms its suitability for low-noise small-signal amplification, particularly in microphone preamplifier and sensor signal conditioning stages where signal integrity is critical.

How does the 2N5401ZL1 differ from the 2N5400 in terms of electrical specifications?

The 2N5401ZL1 differs from the 2N5400 primarily in higher voltage ratings: V_CEO = 150 V vs. 120 V, and V_CBO = 160 V vs. 130 V. Both share identical package (TO-92), pinout, and thermal specs, but the 2N5401ZL1 supports more demanding high-voltage applications such as line-powered amplifiers and industrial control outputs where extra margin is essential.

2N5401ZL1 Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5401ZL1 FAQ

1.How can I place an order for 2N5401ZL1 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401ZL1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401ZL1 reliable?

The price and inventory of 2N5401ZL1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401ZL1 is usually 5 days.

3.What payment methods are accepted for 2N5401ZL1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401ZL1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401ZL1?

2N5401ZL1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401ZL1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401ZL1?

For technical support, including 2N5401ZL1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401ZL1 requirements.

6.How does Aetrix verify that 2N5401ZL1 is sourced from the original manufacturer or authorized distributors?

All 2N5401ZL1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401ZL1 meets industry standards.

7.What is the process for return or replacement of 2N5401ZL1?

All 2N5401ZL1 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401ZL1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401ZL1 part is unused and in its original packaging.

Return procedure for 2N5401ZL1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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