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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5401ZL1G

Name: 2N5401ZL1G
Brand: onsemi
SKU: 2N5401ZL1G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5401ZL1G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N5401ZL1G.pdf

Description:: TRANS PNP 150V 0.6A TO92

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Product details

Overview

2N5401ZL1G from onsemi is a PNP silicon small-signal amplifier transistor in TO-92 package, rated for V_CEO = 150 V, I_C = 600 mA, and P_D = 625 mW at T_A = 25°C. It delivers h_FE = 50–240 (at I_C = 1–50 mA), f_T = 300 MHz, and V_CE(sat) ≤ 0.5 V - used in high-voltage linear amplification and switching stages of industrial power supplies and analog signal conditioning circuits.

For engineers reviewing the 2N5401ZL1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 150 V V_CEO, 300 MHz f_T, TO-92 leaded package compatibility, low leakage (I_CBO ≤ 50 nA), and Pb-free construction per J-STD-609.

Technical Context

This PNP bipolar junction transistor operates with emitter-grounded configuration and supports DC amplification and active-mode switching up to 300 MHz. Its thermal resistance R_JA = 200°C/W and R_JC = 83.3°C/W define thermal management constraints for continuous operation at ambient temperatures from −55°C to +150°C.

The device exhibits V_BE(sat) = 1.0 V at I_C/I_B = 10, C_obo = 6.0 pF at V_CB = 10 V, and noise figure NF = 8.0 dB at I_C = 250 µA - confirming suitability for low-noise preamplifier and high-voltage gain stage designs where stable h_FE and predictable saturation behavior are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	150 Vdc - supports high-side switching and amplification in 100–130 V rail systems without breakdown.
I_C (max)	600 mAdc - enables drive capability for medium-current loads such as relay coils or LED arrays.
h_FE	50–240 - provides wide DC gain range across operating currents (1–50 mA), easing bias design flexibility.
f_T	300 MHz - ensures usable bandwidth for RF preamp and broadband analog signal amplification up to ~100 MHz.
V_CE(sat)	≤ 0.5 V at I_C = 50 mA / I_B = 5 mA - minimizes conduction loss in saturated-switch applications.
R_JA	200°C/W - requires heatsinking or derating above 25°C ambient to maintain T_J ≤ 150°C under full power.

Pinout & Package

2N5401ZL1G uses the standard TO-92 (Case 29-11) package with 3 leads: Emitter (Pin 1), Base (Pin 2), Collector (Pin 3). The package is Pb-free, axial-leaded, and designed for through-hole mounting with 2.54 mm lead pitch.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current source terminal in PNP operation	Connected to highest potential node in common-base/common-collector configurations; sets reference for base-emitter biasing.
2 (Base)	Control input for minority-carrier injection	Requires negative bias relative to emitter to forward-bias BE junction; governs collector current via h_FE.
3 (Collector)	Output current sink terminal	Connected to load or supply rail; voltage swing limited by V_CEO = 150 V and safe operating area (SOA) constraints.

Key Features

Feature	Design Value
High V_CEO rating	150 V - enables use in off-line auxiliary supplies and high-voltage sensor interfaces without cascading transistors.
Pb-free TO-92 packaging	Complies with J-STD-609 Class 3 moisture sensitivity and RoHS Directive 2011/65/EU - suitable for lead-free reflow and automated assembly.
Low collector cutoff current	I_CBO ≤ 50 nA at T_A = 25°C - reduces standby power loss and improves stability in high-impedance bias networks.
Controlled h_FE spread	Min 50 / Max 240 across I_C = 1–50 mA - allows predictable gain staging without individual binning in production designs.

Applications

Industrial Power Supply Feedback	Analog Signal Amplification
Use Scenario: Regulating output voltage in isolated flyback converters using optocoupler-coupled feedback loops. IC Role / Device Role / Timing Role: PNP transistor amplifying error signal from TL431 shunt regulator before driving optocoupler LED. Use Value: 150 V V_CEO withstands reflected primary-side transients; low I_CBO prevents false triggering during no-load conditions.	Use Scenario: Low-noise preamplification of thermocouple or strain gauge signals in data acquisition front-ends. IC Role / Device Role / Timing Role: First-stage DC-coupled amplifier with emitter-follower configuration for impedance buffering. Use Value: h_FE ≥ 50 at 1 mA ensures stable bias point; 8.0 dB NF meets <10 dB requirement for 24-bit ADC driver stages.
High-Voltage Switching	Discrete Logic Level Translation
Use Scenario: Driving 120 V AC solenoid valves or indicator lamps from microcontroller GPIO pins via discrete interface circuitry. IC Role / Device Role / Timing Role: Saturated switch controlling load current path between 120 V rail and ground. Use Value: V_CE(sat) ≤ 0.5 V at 50 mA limits power dissipation to <25 mW; TO-92 package accommodates manual prototyping and low-volume assembly.	Use Scenario: Converting 3.3 V logic outputs to 12 V or 24 V control signals for PLC I/O modules and industrial sensors. IC Role / Device Role / Timing Role: Inverting level shifter with pull-up to positive rail and grounded emitter. Use Value: Fast turn-on/off times (<100 ns) support 100 kHz+ digital signaling; 300 MHz f_T ensures clean edge integrity without ringing.

Industrial Power Supply Feedback

Analog Signal Amplification

Use Scenario: Regulating output voltage in isolated flyback converters using optocoupler-coupled feedback loops.

IC Role / Device Role / Timing Role: PNP transistor amplifying error signal from TL431 shunt regulator before driving optocoupler LED.

Use Value: 150 V V_CEO withstands reflected primary-side transients; low I_CBO prevents false triggering during no-load conditions.

Use Scenario: Low-noise preamplification of thermocouple or strain gauge signals in data acquisition front-ends.

IC Role / Device Role / Timing Role: First-stage DC-coupled amplifier with emitter-follower configuration for impedance buffering.

Use Value: h_FE ≥ 50 at 1 mA ensures stable bias point; 8.0 dB NF meets <10 dB requirement for 24-bit ADC driver stages.

High-Voltage Switching

Discrete Logic Level Translation

Use Scenario: Driving 120 V AC solenoid valves or indicator lamps from microcontroller GPIO pins via discrete interface circuitry.

IC Role / Device Role / Timing Role: Saturated switch controlling load current path between 120 V rail and ground.

Use Value: V_CE(sat) ≤ 0.5 V at 50 mA limits power dissipation to <25 mW; TO-92 package accommodates manual prototyping and low-volume assembly.

Use Scenario: Converting 3.3 V logic outputs to 12 V or 24 V control signals for PLC I/O modules and industrial sensors.

IC Role / Device Role / Timing Role: Inverting level shifter with pull-up to positive rail and grounded emitter.

Use Value: Fast turn-on/off times (<100 ns) support 100 kHz+ digital signaling; 300 MHz f_T ensures clean edge integrity without ringing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP amplifier transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MPSA92	V_CEO = 300 V, h_FE = 25–250, TO-92, Pb-free option available (MPSA92G)	Higher voltage rating but wider h_FE spread; lower f_T (50 MHz)	Select when >150 V standoff is required; avoid if bandwidth >100 MHz needed.
BC557B	V_CEO = 45 V, h_FE = 200–450, TO-92, Pb-free (BC557BTA)	Lower voltage rating, higher gain, lower noise (NF = 10 dB), smaller SOA	Select for low-voltage, high-gain audio preamps; not suitable for >60 V rails or switching loads.

Compared with MPSA92 and BC557B, the 2N5401ZL1G offers optimal balance of 150 V capability, 300 MHz bandwidth, and tight thermal resistance - making it preferred for industrial-grade analog and switching applications where both voltage headroom and frequency response matter.

Availability

2N5401ZL1G is available at Aetrix Electronics and suitable for industrial power supplies, analog signal conditioning, high-voltage switching, and discrete logic translation requiring stable component supply and Pb-free compliance.

Supply support for 2N5401ZL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, delivering silicon-based solutions for automotive, industrial, cloud, and IoT applications.

The 2N5401ZL1G belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for reliability in industrial control, power management, and analog signal path applications where proven performance and long-term availability are critical.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5401ZL1G?

The 2N5401ZL1G has a maximum collector-emitter voltage rating (V_CEO) of 150 Vdc. This value is confirmed in the Absolute Maximum Ratings table and verified under test condition I_C = 1.0 mAdc, I_B = 0. Exceeding this voltage risks permanent breakdown. Derating is recommended above 25°C ambient per the specified thermal resistance of 200°C/W.

Is the 2N5401ZL1G RoHS-compliant and Pb-free?

Yes, the 2N5401ZL1G is explicitly marked as Pb-free in the ordering information section and conforms to RoHS Directive 2011/65/EU. The "G" suffix denotes Pb-free packaging, and the device meets J-STD-609 moisture sensitivity level 3. No lead content is present in solderable terminations or internal die attach materials.

What is the typical DC current gain (h_FE) of the 2N5401ZL1G at 10 mA collector current?

At I_C = 10 mAdc and V_CE = 5.0 Vdc, the 2N5401ZL1G exhibits h_FE ranging from 60 (minimum) to 240 (maximum), per the Electrical Characteristics table. This wide range reflects process variation and must be accounted for in bias network design - e.g., using emitter degeneration resistors to stabilize operating point.

Does the 2N5401ZL1G have a documented noise figure specification?

Yes, the 2N5401ZL1G has a specified noise figure (NF) of 8.0 dB maximum at I_C = 250 µAdc, V_CE = 5.0 Vdc, R_S = 1.0 kΩ, and f = 1.0 kHz. This value is measured under standardized conditions and applies directly to low-frequency preamplifier applications where signal-to-noise ratio is critical.

What is the thermal resistance from junction to ambient (R_JA) for the 2N5401ZL1G in free-air conditions?

The thermal resistance from junction to ambient (R_JA) for the 2N5401ZL1G is 200°C/W, as stated in the Thermal Characteristics table. This value assumes standard TO-92 mounting on FR-4 PCB with no heatsink. For continuous 625 mW operation, ambient temperature must remain ≤ 25°C - otherwise, derating is required per the 5.0 mW/°C slope above 25°C.

2N5401ZL1G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Box (TB)

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 150 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5401ZL1G FAQ

1.How can I place an order for 2N5401ZL1G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5401ZL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5401ZL1G reliable?

The price and inventory of 2N5401ZL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5401ZL1G is usually 5 days.

3.What payment methods are accepted for 2N5401ZL1G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5401ZL1G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5401ZL1G?

2N5401ZL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5401ZL1G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5401ZL1G?

For technical support, including 2N5401ZL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5401ZL1G requirements.

6.How does Aetrix verify that 2N5401ZL1G is sourced from the original manufacturer or authorized distributors?

All 2N5401ZL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5401ZL1G meets industry standards.

7.What is the process for return or replacement of 2N5401ZL1G?

All 2N5401ZL1G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5401ZL1G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5401ZL1G part is unused and in its original packaging.

Return procedure for 2N5401ZL1G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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