STMicroelectronics 2N5415
- Part No.:
- 2N5415
- Manufacturer:
- STMicroelectronics
- Category:
- Single Bipolar Transistors
- Package:
- TO-205AD, TO-39-3 Metal Can
- Datasheet:
-
2N5415.pdf
- Description:
- TRANS PNP 200V 1A TO-39
- Quantity:
- Payment:

- Shipping:

Inventory:6,713
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Product details
Overview
2N5415 from STMicroelectronics is a high-voltage silicon epitaxial planar PNP bipolar junction transistor in TO-39 metal package, rated for VCBO = −200 V, VCEO = −200 V, IC = −1 A, Ptot = 10 W at Tc ≤ 25 °C, and designed for high-voltage low-current inverter driver, switching regulator, and series regulator applications in line-operated industrial and consumer equipment.
For engineers reviewing the 2N5415 datasheet, 2N5415 pinout, 2N5415 application, or 2N5415 equivalent, key selection criteria include verified high-voltage blocking (−200 V VCEO), pulsed sustaining voltage (VCE(sus) = −200 V), DC current gain (hFE = 30–150), saturation voltage (VCE(sat) = −2.5 V), and thermal resistance (Rthj-case = 17.5 °C/W).
Technical Context
This PNP transistor employs an epitaxial planar structure optimized for stable high-voltage operation with low leakage: ICBO ≤ −50 µA at VCB = −175 V, ICEO ≤ −50 µA at VCE = −150 V, and IEBO ≤ −20 µA at VEB = −4 V. Its rugged TO-39 metal case enables direct heatsinking and supports pulsed operation up to 300 µs duty cycle 1.5%.
It delivers hFE ≥ 30 at IC = −50 mA / VCE = −10 V, fT = 15 MHz at IC = −10 mA / VCE = −10 V, and CCBO = 25 pF at VCB = −10 V / f = 1 MHz - confirming suitability for medium-speed switching and linear regulation where voltage headroom and thermal robustness are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | −200 V: Maximum reverse bias voltage the collector-base junction withstands with emitter open - defines safe operating area in high-side switch configurations. |
| VCEO | −200 V: Maximum collector-emitter voltage with base open - sets upper limit for series-pass and inverter stage DC blocking. |
| IC | −1 A: Continuous collector current rating - supports load switching up to ~1 A in regulated power supplies. |
| Ptot @ Tc ≤ 25 °C | 10 W: Total power dissipation with case temperature controlled - enables use with external heatsink in thermally constrained designs. |
| hFE | 30–150: DC current gain at IC = −50 mA / VCE = −10 V - determines required base drive current for reliable saturation in switching applications. |
| Rthj-case | 17.5 °C/W: Junction-to-case thermal resistance - allows calculation of junction temperature rise under known case temperature and power dissipation. |
| VCE(sat) | −2.5 V: Collector-emitter saturation voltage at IC = −50 mA / IB = −5 mA - directly impacts conduction loss and heat generation in on-state operation. |
Pinout & Package
The 2N5415 is housed in a hermetically sealed JEDEC TO-39 metal can package with center-tab mounting and axial lead configuration. The case serves as the collector terminal, enabling direct thermal coupling to heatsinks.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Case (Tab) | Collector (C) | Electrically active collector terminal; provides low-thermal-resistance path to heatsink and must be electrically isolated unless circuit design requires common-collector reference. |
| Lead 1 (Emitter) | Emitter (E) | Primary current exit path; connected to most negative potential in PNP switching or regulation stage. |
| Lead 2 (Base) | Base (B) | Control terminal; requires negative base current relative to emitter to turn on device - typical drive uses resistor-coupled NPN or logic-level inverting stage. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage blocking capability | VCBO = −200 V and VCEO = −200 V enable use in 170 VAC-derived DC rails and flyback snubber circuits without derating. |
| Low leakage current | ICBO ≤ −50 µA at VCB = −175 V ensures minimal standby power loss and stable bias in high-impedance regulator feedback paths. |
| Thermally robust metal package | Rthj-case = 17.5 °C/W and 10 W dissipation rating support continuous operation with passive heatsinking in industrial enclosures. |
| Pulsed sustaining voltage | VCE(sus) = −200 V (IC = −10 mA, RBE = 50 Ω) validates reliable operation during transient overvoltage events in switching converters. |
Applications
| Line-Operated AC/DC Regulators | Inverter Driver Stages |
|---|---|
Use Scenario: Linear series regulator converting rectified 170 VDC from 120 VAC mains to stable −15 V for analog control circuitry. IC Role / Device Role / Timing Role: PNP pass transistor operating in active region, dissipating excess voltage as heat while maintaining precise output voltage via feedback loop. Use Value: High VCEO and low ICBO ensure regulation stability across wide input voltage swings and ambient temperatures up to 85 °C. | Use Scenario: High-side switch in push-pull inverter driving step-up transformer for CCFL backlighting in legacy LCD monitors. IC Role / Device Role / Timing Role: PNP switching element turned on/off at 20–60 kHz to generate AC high voltage; operates in saturation and cutoff regions. Use Value: Low VCE(sat) minimizes conduction loss, while TO-39 thermal mass sustains repetitive 300 µs pulses without thermal runaway. |
| Industrial Switching Power Supplies | High-Voltage Signal Amplification |
Use Scenario: Primary-side switch in offline flyback converter delivering 24 V/1 A to PLC I/O modules. IC Role / Device Role / Timing Role: PNP transistor used in self-oscillating or externally driven topology, handling peak currents up to −1 A during energy transfer phase. Use Value: Robust VCBO rating prevents breakdown during transformer leakage spike transients; Rthj-case enables compact heatsink integration. | Use Scenario: Level-shifting amplifier stage in HV gate driver IC evaluation board, translating TTL logic to −100 V referenced signals. IC Role / Device Role / Timing Role: Common-emitter amplifier biased in active mode to provide inverted, high-voltage gain for gate control signals. Use Value: hFE ≥ 30 and fT = 15 MHz support bandwidth sufficient for <100 ns edge transitions in MOSFET gate drive applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP high-voltage switching and regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJE15032 | VCEO = −250 V, hFE = 20–120, TO-220 package, higher Ptot = 25 W | Requires PCB-mount heatsink; not drop-in compatible due to different footprint and pinout | Select when higher power dissipation or improved voltage margin is needed and TO-220 layout is acceptable. |
| 2N6517 | VCEO = −300 V, IC = −0.5 A, TO-92 package, lower Ptot = 0.625 W | Limited to low-power signal switching; unsuitable for regulator pass or inverter driver roles | Use only for low-current, high-voltage bias or sensing functions where thermal load is negligible. |
Compared with MJE15032 and 2N6517, the 2N5415 offers optimal balance of voltage rating, current capability, and thermal performance in a compact, heatsink-compatible TO-39 metal can - making it uniquely suited for space-constrained, line-powered industrial regulators requiring field-replaceable mechanical robustness.
Availability
2N5415 is available at Aetrix Electronics and suitable for line-operated AC/DC regulators, high-voltage inverter drivers, and industrial switching power supplies requiring stable component supply, long-term manufacturability, and traceable sourcing from STMicroelectronics.
Supply support for 2N5415 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, microcontroller, and sensor solutions for industrial, automotive, and consumer markets.
The 2N5415 belongs to ST's legacy high-voltage discrete transistor product line, developed specifically for ruggedized line-operated power conversion systems where reliability under sustained high-voltage stress is essential.
FAQ
Is the 2N5415 pin-compatible with the 2N5416?
No. While both share identical TO-39 packaging and pinout (case = collector, lead 1 = emitter, lead 2 = base), the 2N5416 has higher voltage ratings (VCBO = −350 V, VCEO = −300 V) and different hFE range (30–120). Substitution requires verification of voltage margin and gain requirements in the target circuit.
Can the 2N5415 be used in avalanche mode?
No. The 2N5415 is not characterized or rated for controlled avalanche operation. Its absolute maximum ratings and electrical characteristics assume normal forward-active or saturation operation. Avalanche use may cause irreversible junction damage due to uncontrolled localized heating.
What is the recommended heatsink interface for the TO-39 case?
A mica washer with silicone grease or thermally conductive adhesive is recommended to electrically isolate the collector (case) while maintaining low thermal resistance. Mounting torque must not exceed 5 in·lb to avoid case deformation or seal compromise, per STMicroelectronics mechanical guidelines for TO-39 packages.
Does the 2N5415 have built-in ESD protection?
No. The 2N5415 is a bare-die bipolar transistor without integrated ESD protection structures. Handling requires standard static-sensitive device precautions (grounded workstation, wrist strap, anti-static packaging), and PCB layout should include external transient suppression if exposed to human contact or cable interfaces.
2N5415 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Series:
- -
- Package/Case:
- TO-205AD, TO-39-3 Metal Can
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 1 A
- Voltage - Collector Emitter Breakdown (Max):
- 200 V
- Vce Saturation (Max) @ Ib, Ic:
- 2.5V @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 50mA, 10V
- Power - Max:
- 1 W
- Frequency - Transition:
- 15MHz
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-39
2N5415 FAQ
1.How can I place an order for 2N5415 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5415 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5415 reliable?
The price and inventory of 2N5415 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5415 is usually 5 days.
3.What payment methods are accepted for 2N5415?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5415 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5415?
2N5415 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5415 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5415?
For technical support, including 2N5415 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5415 requirements.
6.How does Aetrix verify that 2N5415 is sourced from the original manufacturer or authorized distributors?
All 2N5415 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5415 meets industry standards.
7.What is the process for return or replacement of 2N5415?
All 2N5415 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5415, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5415 part is unused and in its original packaging.
Return procedure for 2N5415:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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