onsemi 2N5461G

Overview

2N5461G from onsemi is a P-channel depletion-mode JFET amplifier optimized for low-noise, high-input-impedance analog signal conditioning in audio preamplifiers, sensor interfaces, and RF front-end stages. It delivers IDSS = −2.0 to −9.0 mA, VGS(off) = 1.0 to 7.5 V, |yfs| = 1500–5000 mhos, and en = 60–115 nV/√Hz at 100 Hz, housed in a TO-92 package.

For engineers reviewing the 2N5461G datasheet, pinout, applications, or equivalent options, key selection criteria include gate-source cutoff voltage tolerance, forward transfer admittance matching, noise performance at target bias current, and thermal derating in compact PCB layouts.

Technical Context

This JFET operates as a voltage-controlled current source with depletion-mode behavior-conducting fully at VGS = 0 V and pinching off as VGS becomes increasingly positive. Its high input impedance (>10¹² Ω) and low gate leakage (IGSS ≤ 1.0 nA at 20 V, 100°C) enable direct coupling without DC blocking capacitors in sensitive gain stages.

The device exhibits predictable transconductance variation across temperature (−55°C to +125°C), with |yfs| peaking near ID ≈ 3–5 mA and output resistance ross > 10 kΩ at ID = 1 mA. Small-signal parameters are specified at VDS = 15 V, f = 1 kHz (y-parameters) and f = 1 MHz (capacitances), supporting stable operation up to low-VHF frequencies.

Key Specifications

Pinout & Package

2N5461G uses the industry-standard TO-92 package (Case 29, Style 7), with 3 leads in straight-line configuration and JEDEC-compliant mechanical dimensions (max height 4.5 mm, body diameter 3.2 mm).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar JFET amplifier applications.

Compared with J310 and 2SK208, the 2N5461G provides a balanced trade-off of moderate transconductance, controlled VGS(off) spread, and verified low-noise performance in a widely available, RoHS-compliant TO-92 package-making it ideal for cost-sensitive, single-supply analog signal chains.

Availability

2N5461G is available at Aetrix Electronics and suitable for audio preamplifiers, sensor interface circuits, and RF front-end amplifiers requiring stable component supply, long-term manufacturability, and RoHS compliance.

Supply support for 2N5461G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5461G belongs to onsemi's legacy JFET amplifier family designed for high-fidelity analog signal conditioning-emphasizing low noise, stable transconductance, and robust thermal performance in discrete gain stages.

FAQ

What is the maximum drain-source voltage rating for the 2N5461G?

The 2N5461G has a maximum drain–gate voltage (VDG) rating of 40 Vdc. This rating applies under reverse-biased gate conditions and defines the absolute upper limit for VDS when the gate is at or near source potential. Exceeding this value risks avalanche breakdown and permanent device damage, especially during transient events or improper biasing.

Does the 2N5461G require a negative supply voltage to operate?

No-the 2N5461G is a P-channel depletion-mode JFET and operates with zero or positive gate-to-source voltage. It conducts at VGS = 0 V and turns off as VGS increases positively. A negative supply is neither required nor recommended; typical biasing uses a single positive supply with source tied to VCC and drain pulled down through a load resistor.

How does the 2N5461G compare to the 2N5460G and 2N5462G in terms of IDSS and VGS(off)?

The 2N5461G is the mid-range variant: its IDSS (−2.0 to −9.0 mA) and VGS(off) (1.0 to 7.5 V) fall between the 2N5460G (IDSS = −1.0 to −5.0 mA, VGS(off) = 0.75–6.0 V) and 2N5462G (IDSS = −4.0 to −16 mA, VGS(off) = 1.8–9.0 V). This makes the 2N5461G optimal for applications needing moderate gain and bias stability without extreme current or cutoff voltage extremes.

Can the 2N5461G be used in surface-mount designs?

No-the 2N5461G is exclusively offered in the through-hole TO-92 package (Case 29, Style 7). onsemi does not manufacture a surface-mount variant of this part. For SMT-compatible alternatives, engineers should evaluate functionally similar JFETs such as the SOT-23 packaged MMBFJ175LT1G (P-channel, VGS(off) = −0.3 to −1.5 V), though parameter alignment requires full circuit revalidation.

What is the thermal derating coefficient for the 2N5461G above 25°C ambient?

The 2N5461G has a thermal derating coefficient of 2.8 mW/°C above TA = 25°C. This means its maximum allowable power dissipation decreases linearly by 2.8 mW for each degree Celsius rise in ambient temperature-for example, at 75°C ambient, PD(max) = 350 mW − (50 × 2.8 mW) = 210 mW. Junction temperature must remain ≤ +135°C for reliable operation.