onsemi 2N5550_D26Z

Overview

2N5550_D26Z from ON Semiconductor is an NPN epitaxial silicon transistor designed for general-purpose amplifier and switching applications, featuring V_CEO = 140 V, I_C = 600 mA, and f_T = 100–300 MHz. It operates reliably up to T_J = 150 °C and delivers h_FE = 60–250 at I_C = 1–10 mA, V_CE = 5 V - commonly used in audio preamplifiers, signal buffering, and low-power switching circuits.

For engineers reviewing the 2N5550_D26Z datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-92 package compatibility, DC current gain profile across collector current range, saturation voltage behavior at I_C/I_B = 10 mA/1 mA and 50 mA/5 mA, and thermal resistance of 200 °C/W under standard FR-4 PCB conditions.

Technical Context

This discrete NPN bipolar junction transistor uses epitaxial base construction to support high-voltage operation with low leakage (I_CBO ≤ 100 nA at V_CB = 100 V) and stable gain over temperature. Its breakdown ratings - V_CBO = 160 V, V_CEO = 140 V, and V_EBO = 6 V - define safe operating limits for linear and saturated-mode use.

The device exhibits frequency response suitable for RF amplification up to 100 MHz (f_T typ. 200 MHz), with Cob = 6 pF at V_CB = 10 V and noise figure NF = 10 dB at I_C = 250 μA, making it appropriate for low-noise small-signal stages where bandwidth and gain consistency are critical.

Key Specifications

Pinout & Package

2N5550_D26Z is housed in a through-hole TO-92 3-lead package with straight leads (JEDEC TO-92 compliant), optimized for manual assembly and prototyping. The package provides mechanical robustness and thermal performance suitable for low-to-medium power analog and switching tasks.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with BC547B and MPSA18, the 2N5550_D26Z offers superior high-voltage resilience (140 V V_CEO) and higher continuous current capacity (600 mA), making it uniquely suited for industrial signal conditioning, AC line sensing, and medium-power switching where both voltage headroom and thermal robustness are required.

Availability

2N5550_D26Z is available at Aetrix Electronics and suitable for audio preamplification, industrial sensor interfacing, and low-power switching applications requiring stable component supply, long-term manufacturability, and TO-92 through-hole compatibility.

Supply support for 2N5550_D26Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, and discrete solutions for automotive, industrial, and cloud infrastructure markets.

The 2N5550_D26Z belongs to ON Semiconductor's legacy general-purpose bipolar transistor portfolio, originally developed by Fairchild Semiconductor to serve cost-sensitive, high-reliability analog and switching functions in industrial controls and consumer electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5550_D26Z?

The 2N5550_D26Z has a guaranteed minimum collector-emitter breakdown voltage (V_CEO) of 140 V at I_C = 1 mA and T_A = 25 °C. This rating remains valid across the full specified operating temperature range and defines the absolute upper limit for DC or peak voltage applied between collector and emitter terminals in the 2N5550_D26Z.

Does the 2N5550_D26Z have a specified noise figure, and under what conditions?

Yes, the 2N5550_D26Z specifies a noise figure (NF) of 10 dB, measured at I_C = 250 μA, V_CE = 5 V, R_S = 1 kΩ, and frequency range 10 Hz to 15.7 kHz. This value is documented in the official datasheet and applies directly to the 2N5550_D26Z under those exact test conditions.

What is the thermal resistance junction-to-ambient for the 2N5550_D26Z, and how is it measured?

The 2N5550_D26Z has a thermal resistance R_θJA of 200 °C/W, measured on a standard FR-4 PCB (76 mm × 114 mm × 1.57 mm) with minimum land pattern size. This value reflects real-world conduction and convection cooling performance and is used to calculate junction temperature rise in the 2N5550_D26Z during operation.

Is the 2N5550_D26Z available in tape-and-reel packaging, and which variants support it?

Yes, the 2N5550_D26Z is available in tape-and-reel packaging through variants including 2N5550TF and 2N5550TFR - both specified in the official ordering information table for the 2N5550_D26Z family. These versions maintain identical electrical and thermal specifications as the bulk and ammo-packaged units.

What is the DC current gain (h_FE) range for the 2N5550_D26Z, and how does it vary with operating conditions?

The 2N5550_D26Z exhibits h_FE = 60 (min) to 250 (max) at I_C = 10 mA and V_CE = 5 V, with a minimum of 60 also guaranteed at I_C = 1 mA. Gain decreases to 20 at I_C = 50 mA, reflecting typical bipolar transistor behavior - all values are verified per the 2N5550_D26Z datasheet and apply across the full temperature range.