onsemi 2N5550RLRA

Overview

2N5550RLRA from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 140 V_CEO, 600 mA continuous collector current, and 625 mW power dissipation at 25°C ambient. It delivers DC current gain (h_FE) of 60–250 at I_C = 1.0–50 mA, with f_T up to 300 MHz and low noise figure of 10 dB at 1 kHz - used in high-voltage audio preamplifiers, signal conditioning stages, and linear switching circuits.

For engineers reviewing the 2N5550RLRA datasheet, pinout, applications, or equivalent options, key selection criteria include its 140 V_CEO rating, TO-92 leaded package compatibility, h_FE range across operating currents, thermal resistance (R_JA = 200 °C/W), and Pb-free tape-and-reel packaging (2000 units/reel) for automated assembly.

Technical Context

The 2N5550RLRA operates as a medium-power, high-voltage NPN bipolar junction transistor optimized for linear amplification and switching in discrete analog stages. Its design supports stable DC biasing with V_BE(sat) ≤ 1.0 V at I_C/I_B = 10 and V_CE(sat) ≤ 0.15 V under same conditions.

It features low output capacitance (C_obo ≤ 6.0 pF) and input capacitance (C_ibo ≤ 30 pF), enabling wideband small-signal performance up to 300 MHz (f_T). Junction temperature range spans −55°C to +150°C, with thermal resistance R_JC = 83.3 °C/W for case-mounted thermal management.

Key Specifications

Pinout & Package

2N5550RLRA uses the standard TO-92 (Case 29, Style 1) through-hole plastic package with 3 leads. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - verified per ON Semiconductor marking diagram and package outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier transistor applications.

Compared with 2N5550RLRA, the 2N5551RLRA offers enhanced voltage headroom without layout or thermal changes, while BC547C trades voltage capability for higher DC gain and lower cost in non-HV applications - making 2N5550RLRA the optimal balance of voltage, noise, and bandwidth for mid-range analog designs.

Availability

2N5550RLRA is available at Aetrix Electronics and suitable for audio preamplifiers, high-voltage sensor interfaces, and relay driver circuits requiring stable component supply, consistent parametric performance, and Pb-free tape-and-reel packaging for automated manufacturing.

Supply support for 2N5550RLRA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, cloud, and IoT applications.

The 2N5550RLRA belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for robustness, wide operating temperature range, and reliable performance in discrete analog signal chains and power interface circuits.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5550RLRA?

The 2N5550RLRA has a maximum collector-emitter voltage (V_CEO) rating of 140 Vdc, verified per ON Semiconductor's official datasheet revision 4. This rating applies under specified test conditions (I_C = 1.0 mAdc, I_B = 0) and defines the upper limit for safe operation in common-emitter amplifier or switch configurations. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does the 2N5550RLRA have Pb-free construction?

Yes, the 2N5550RLRA is a Pb-free device, confirmed by its "RLRA" suffix and explicit listing in the ON Semiconductor ordering table as a Pb-free variant. The package complies with RoHS Directive 2011/65/EU and uses lead-free solder plating on leads. This makes the 2N5550RLRA suitable for environmentally regulated production programs requiring compliant materials documentation.

What is the DC current gain (h_FE) range of the 2N5550RLRA at different operating points?

The 2N5550RLRA exhibits h_FE = 60–250 depending on collector current: minimum 60 at I_C = 1.0 mAdc, minimum 60 at I_C = 10 mAdc, and minimum 20 at I_C = 50 mAdc (all at V_CE = 5.0 Vdc). Maximum h_FE reaches 250 at I_C = 50 mAdc. These values are measured per ON Semiconductor's electrical characteristics table and guide bias resistor selection for predictable amplification.

How is the 2N5550RLRA packaged for automated assembly?

The 2N5550RLRA is supplied in tape-and-reel format: 2000 units per reel, compatible with standard TO-92 pick-and-place feeders. The "RLRA" suffix explicitly denotes this packaging configuration per ON Semiconductor's ordering information table. Leads are straightened and oriented per EIA-481 standards, enabling reliable automated insertion into through-hole PCBs without manual handling.

What thermal limitations apply to the 2N5550RLRA in still-air conditions?

In still-air ambient (T_A = 25°C), the 2N5550RLRA is rated for 625 mW total power dissipation, derating linearly by 5.0 mW/°C above 25°C. Its thermal resistance from junction-to-ambient (R_JA) is 200 °C/W, meaning a 625 mW load raises junction temperature by 125°C above ambient - reaching the 150°C absolute maximum. For sustained operation >300 mW, board-level copper area or heatsinking is required to maintain reliability.