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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5550RLRAG

Name: 2N5550RLRAG
Brand: onsemi
SKU: 2N5550RLRAG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5550RLRAG

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 Long Body, Formed Leads

Datasheet:: 2N5550RLRAG.pdf

Description:: TRANS NPN 140V 0.6A TO92

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Product details

Overview

2N5550RLRAG from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 140 V_CEO, 600 mA_C, and 625 mW at T_A = 25°C, with h_FE ≥ 60 (I_C = 1 mA, V_CE = 5 V), f_T ≥ 100 MHz, and V_CE(sat) ≤ 0.25 V (I_C = 50 mA, I_B = 5 mA). It serves as a medium-voltage, medium-current gain stage in audio preamplifiers, signal conditioning circuits, and discrete switching interfaces.

For engineers reviewing the 2N5550RLRAG datasheet, pinout, applications, or equivalent options, key selection considerations include its 140 V_CEO rating, TO-92 leaded package compatibility with through-hole prototyping, DC current gain range across operating currents, thermal derating behavior above 25°C, and Pb-free RoHS-compliant construction.

Technical Context

The 2N5550RLRAG operates as a discrete NPN bipolar junction transistor optimized for linear amplification and moderate-speed switching. Its design supports stable h_FE over −55°C to +150°C junction temperature, with V_BE(sat) ≤ 1.0 V and low C_ibo = 30 pF enabling high-input-impedance bias networks and RF-coupled stages up to ~100 MHz.

Thermal performance is defined by R_JA = 200°C/W (ambient) and R_JC = 83.3°C/W (case), requiring careful PCB copper area planning for continuous 600 mA operation. The device exhibits V_(BR)EBO = 6.0 V and I_CBO ≤ 100 nA at 100 V_CB, supporting reliable operation in high-impedance emitter-follower configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	140 V - Maximum collector-emitter voltage before breakdown; enables use in 100–120 V rail applications with safety margin.
I_C (continuous)	600 mA - Sustained collector current capability; supports medium-power driver and gain-stage loads.
P_D @ T_A = 25°C	625 mW - Power dissipation limit at room ambient; requires thermal derating of 5.0 mW/°C above 25°C.
h_FE (min)	60 @ I_C = 1 mA, V_CE = 5 V - Minimum DC current gain for bias stability in low-current amplifier designs.
f_T	100 MHz - Transition frequency; supports small-signal amplification up to HF band with adequate gain margin.
C_ibo	30 pF - Input capacitance at V_EB = 0.5 V; impacts high-frequency input impedance and bandwidth in common-emitter stages.
NF	10 dB @ I_C = 250 μA - Noise figure at low collector current; relevant for low-level signal amplification in sensor front-ends.

Pinout & Package

2N5550RLRAG uses the standard TO-92 (Case 29, Style 1) plastic package with 3 leads. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - verified per marking diagram and mechanical drawing in onsemi datasheet Rev. 4.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Current exit terminal for NPN operation	Serves as reference node for bias networks; connects to ground or emitter degeneration resistors in CE/CC configurations.
2 (Base)	Control electrode for minority-carrier injection	Requires current-limited drive (e.g., via base resistor); sensitive to ESD due to low V_(BR)EBO = 6.0 V.
3 (Collector)	Current entry terminal under forward-active bias	Connected to positive supply rail or load; must withstand up to 140 V_CEO during switching transients.

Key Features

Feature	Design Value
High V_CEO rating	140 V enables use in 100 V-class power supply feedback loops and industrial interface circuits without series voltage division.
Pb-free TO-92 packaging	RoHS-compliant construction (2N5550RLRAG suffix) ensures compliance with environmental regulations and reflow compatibility.
Low noise at microamp bias	10 dB NF at I_C = 250 μA supports precision analog front-ends where signal integrity dominates over gain.
Stable h_FE vs. temperature	Specified h_FE min/max across −55°C to +150°C allows predictable DC biasing in automotive and industrial environments.
Fast switching capability	t_r/t_f ≤ 35 ns (V_CC = 30 V, I_C/I_B = 10) supports pulse amplification and digital logic interfacing up to ~10 MHz.

Applications

Audio Preamp Stage	Industrial Sensor Interface
Use Scenario: Low-noise voltage amplification of microphone or piezoelectric sensor outputs prior to ADC sampling. IC Role / Device Role / Timing Role: Discrete NPN gain stage in common-emitter configuration with emitter degeneration. Use Value: 10 dB noise figure at 250 μA and 60+ h_FE ensure high SNR and stable bias without active temperature compensation.	Use Scenario: Level-shifting and current buffering of 4–20 mA loop signals in PLC analog input modules. IC Role / Device Role / Timing Role: Emitter-follower buffer isolating field-side current loop from internal signal processing circuitry. Use Value: 140 V_CEO and 600 mA I_C support safe operation across full loop compliance voltage range (up to 30 V) with margin.
Switching Power Supply Feedback	Legacy TTL/CMOS Interface Driver
Use Scenario: Optocoupler-driven error amplifier output stage in isolated flyback converter feedback path. IC Role / Device Role / Timing Role: Linear pass transistor regulating optocoupler LED current based on secondary-side voltage error. Use Value: V_CE(sat) ≤ 0.25 V at 50 mA ensures minimal power loss and thermal rise in constant-current sink operation.	Use Scenario: Driving multiple TTL loads or low-capacitance CMOS inputs from microcontroller GPIO pins. IC Role / Device Role / Timing Role: Single-transistor inverter or current-boosting switch between logic families. Use Value: f_T ≥ 100 MHz and t_r/t_f < 35 ns enable clean edge transitions even with 10–20 pF load capacitance.

Audio Preamp Stage

Industrial Sensor Interface

Use Scenario: Low-noise voltage amplification of microphone or piezoelectric sensor outputs prior to ADC sampling.

IC Role / Device Role / Timing Role: Discrete NPN gain stage in common-emitter configuration with emitter degeneration.

Use Value: 10 dB noise figure at 250 μA and 60+ h_FE ensure high SNR and stable bias without active temperature compensation.

Use Scenario: Level-shifting and current buffering of 4–20 mA loop signals in PLC analog input modules.

IC Role / Device Role / Timing Role: Emitter-follower buffer isolating field-side current loop from internal signal processing circuitry.

Use Value: 140 V_CEO and 600 mA I_C support safe operation across full loop compliance voltage range (up to 30 V) with margin.

Switching Power Supply Feedback

Legacy TTL/CMOS Interface Driver

Use Scenario: Optocoupler-driven error amplifier output stage in isolated flyback converter feedback path.

IC Role / Device Role / Timing Role: Linear pass transistor regulating optocoupler LED current based on secondary-side voltage error.

Use Value: V_CE(sat) ≤ 0.25 V at 50 mA ensures minimal power loss and thermal rise in constant-current sink operation.

Use Scenario: Driving multiple TTL loads or low-capacitance CMOS inputs from microcontroller GPIO pins.

IC Role / Device Role / Timing Role: Single-transistor inverter or current-boosting switch between logic families.

Use Value: f_T ≥ 100 MHz and t_r/t_f < 35 ns enable clean edge transitions even with 10–20 pF load capacitance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N5551RLRAG	Higher V_CEO (160 V) and V_CBO (180 V); identical TO-92 Pb-free packaging and pinout.	Preferred where >140 V breakdown margin is required, e.g., in 150 V bus monitoring or higher-voltage relay drivers.	Select 2N5551RLRAG only if system voltage stress exceeds 140 V; otherwise 2N5550RLRAG offers optimal cost/performance balance.
BC547C	Lower V_CEO (45 V), lower I_C (100 mA), but higher h_FE (420 min), same TO-92 package.	Better suited for low-voltage, high-gain signal amplification (e.g., battery-powered sensors), not medium-voltage switching.	Choose BC547C only for sub-45 V rails and high-beta requirements; avoid in 100+ V applications where 2N5550RLRAG's voltage rating is essential.

Compared with 2N5551RLRAG, the 2N5550RLRAG trades 20 V of breakdown headroom for broader availability and lower unit cost in legacy designs; versus BC547C, it delivers 3× higher voltage capability and 6× higher current handling at the expense of gain linearity and low-current noise performance.

Availability

2N5550RLRAG is available at Aetrix Electronics and suitable for audio preamplifier circuits, industrial 4–20 mA interface modules, and isolated switching power supply feedback paths requiring stable component supply, long-term obsolescence management, and RoHS-compliant through-hole assembly.

Supply support for 2N5550RLRAG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power and sensing solutions for automotive, industrial, cloud, and consumer markets.

The 2N5550RLRAG belongs to onsemi's legacy discrete transistor product line, designed for general-purpose linear amplification and switching in cost-sensitive, reliability-critical through-hole applications across industrial control and analog signal chains.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5550RLRAG?

The 2N5550RLRAG has a guaranteed minimum V_(BR)CEO of 140 Vdc at I_C = 1.0 mA and I_B = 0. This rating defines the absolute maximum voltage that can be applied between collector and emitter while maintaining safe, non-destructive operation under specified test conditions.

Is the 2N5550RLRAG RoHS-compliant and lead-free?

Yes, the "G" suffix in 2N5550RLRAG explicitly denotes a Pb-free (lead-free) package per onsemi's RoHS compliance program. The device meets EU RoHS Directive 2011/65/EU and is suitable for environmentally regulated manufacturing environments.

What is the typical DC current gain (h_FE) of the 2N5550RLRAG at 10 mA collector current?

At I_C = 10 mA and V_CE = 5 V, the 2N5550RLRAG exhibits h_FE ranging from 60 to 250 per onsemi's electrical characteristics table. The minimum guaranteed value is 60, ensuring predictable bias point stability in production designs.

Can the 2N5550RLRAG be used in switching applications?

Yes, the 2N5550RLRAG supports switching operation with documented t_r and t_f ≤ 35 ns (V_CC = 30 V, I_C/I_B = 10), V_CE(sat) ≤ 0.25 V, and f_T ≥ 100 MHz - making it suitable for low-to-medium frequency digital interfacing and PWM-driven loads up to ~10 MHz.

What is the thermal resistance junction-to-ambient (R_JA) for the 2N5550RLRAG in free-air conditions?

The 2N5550RLRAG has a maximum R_JA of 200°C/W when mounted on a standard FR-4 PCB with no added copper heatsinking. This value governs thermal derating: power dissipation must decrease by 5.0 mW per °C rise above 25°C ambient to maintain T_J ≤ 150°C.

2N5550RLRAG Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 Long Body, Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 600 mA

Voltage - Collector Emitter Breakdown (Max):: 140 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 60 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: 300MHz

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92 (TO-226)

2N5550RLRAG FAQ

1.How can I place an order for 2N5550RLRAG through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5550RLRAG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5550RLRAG reliable?

The price and inventory of 2N5550RLRAG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5550RLRAG is usually 5 days.

3.What payment methods are accepted for 2N5550RLRAG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5550RLRAG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5550RLRAG?

2N5550RLRAG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5550RLRAG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5550RLRAG?

For technical support, including 2N5550RLRAG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5550RLRAG requirements.

6.How does Aetrix verify that 2N5550RLRAG is sourced from the original manufacturer or authorized distributors?

All 2N5550RLRAG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5550RLRAG meets industry standards.

7.What is the process for return or replacement of 2N5550RLRAG?

All 2N5550RLRAG units undergo pre-shipment inspection (PSI). If there is an issue with 2N5550RLRAG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5550RLRAG part is unused and in its original packaging.

Return procedure for 2N5550RLRAG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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