onsemi 2N5550RLRP

Overview

2N5550RLRP from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 140 V_CEO, 600 mA continuous collector current, and 625 mW power dissipation at 25°C ambient. It delivers DC current gain (h_FE) of 60–250 at I_C = 1.0–50 mA and supports high-frequency amplification up to 100 MHz f_T. It is commonly used in low-noise preamplifier stages and switching applications in industrial control and signal conditioning circuits.

For engineers reviewing the 2N5550RLRP datasheet, pinout, applications, or equivalent options, key selection considerations include its 140 V_CEO rating, TO-92 leaded package compatibility with through-hole assembly, 100 MHz f_T bandwidth, and verified noise figure of 10 dB at 1 kHz - critical for analog front-end design and discrete gain block implementation.

Technical Context

The 2N5550RLRP operates as a medium-voltage, medium-current NPN bipolar junction transistor optimized for linear amplification and fast-switching roles. Its 160 V_CBO and 6 V_EBO ratings support robust biasing in common-emitter configurations, while its 83.3°C/W junction-to-case thermal resistance enables reliable operation under moderate power loads when mounted on PCB copper.

With h_FE spanning 60–250 across I_C = 1–50 mA and V_CE = 5 V, it provides stable DC gain for cascaded amplifier stages. Its 6.0 pF C_obo and 30 pF C_ibo values, combined with 100 MHz f_T, confirm suitability for RF-coupled audio and IF amplifiers where input/output capacitance and transition frequency directly impact bandwidth and stability.

Key Specifications

Pinout & Package

2N5550RLRP uses the standard TO-92 (Case 29, Style 1) through-hole plastic package with 3 leads. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - consistent across all 2N5550 variants per onsemi's marking diagram and package outline.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier transistor applications.

Compared with 2N5551RLRP and BC547C, the 2N5550RLRP uniquely balances 140 V ruggedness, 100 MHz bandwidth, and 10 dB noise performance in a RoHS-compliant TO-92 tape-and-ammo format - making it the preferred choice for mid-voltage analog and switching functions where reliability and specification consistency are prioritized.

Availability

2N5550RLRP is available at Aetrix Electronics and suitable for industrial sensor interfaces, audio preamplifier circuits, and switch-mode power supply driver stages requiring stable component supply and long-term manufacturability.

Supply support for 2N5550RLRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The 2N5550RLRP belongs to onsemi's legacy amplifier transistor product line, designed specifically for high-reliability, through-hole discrete gain and switching functions in industrial control, instrumentation, and power electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5550RLRP?

The 2N5550RLRP has a guaranteed minimum V_(BR)CEO of 140 Vdc at I_C = 1.0 mAdc and I_B = 0. This rating defines the absolute maximum voltage that can be applied between collector and emitter while keeping the transistor in cutoff - critical for designing amplifier stages or switches operating from 100–120 V supplies. Exceeding this value risks avalanche breakdown and permanent damage.

Is the 2N5550RLRP RoHS compliant?

Yes, the "G" and "RLRP" suffixes in the 2N5550RLRP designation indicate a Pb-free (RoHS-compliant) TO-92 package. onsemi confirms full compliance with EU RoHS Directive 2011/65/EU and subsequent amendments. The device uses matte tin lead finish and halogen-free molding compound, validated per JESD22-A112 and JEDEC JS-001 standards.

What is the typical DC current gain (h_FE) of the 2N5550RLRP at 10 mA collector current?

At I_C = 10 mAdc and V_CE = 5.0 Vdc, the 2N5550RLRP exhibits h_FE ranging from 60 to 250 per onsemi's datasheet. This wide gain spread reflects process variation and requires circuit-level design margining - e.g., emitter degeneration resistors or feedback networks - to ensure consistent biasing across production units.

Can the 2N5550RLRP be used in high-frequency amplifier applications?

Yes, the 2N5550RLRP has a specified f_T of 100 MHz at I_C = 10 mAdc, V_CE = 10 Vdc, and f = 100 MHz. This makes it suitable for VHF amplification (e.g., 30–100 MHz IF stages), ultrasonic drivers, and broadband preamplifiers - provided layout minimizes parasitic capacitance and supply decoupling is optimized per onsemi's application guidance.

What is the thermal resistance junction-to-ambient (R_JA) for the 2N5550RLRP in free-air conditions?

The 2N5550RLRP has a maximum R_JA of 200°C/W when mounted in still air on a standard FR-4 PCB with minimal copper area. This value determines allowable power dissipation: at 25°C ambient, max P_D = 625 mW drops to ~375 mW at 75°C ambient. For sustained >300 mW operation, use thermal relief pads or external heatsinking.