NXP Semiconductors 2N5551,116

Overview

2N5551,116 from Nexperia (formerly Philips Semiconductors) is an NPN high-voltage general-purpose transistor in TO-92 (SOT54) package, rated for V_CEO = 160 V, I_C = 300 mA, and h_FE = 80–250 at I_C = 10 mA. It serves as a switching or linear amplifier in telephony line interface circuits requiring robust voltage handling and low-noise performance.

For engineers reviewing the 2N5551,116 datasheet, 2N5551,116 pinout, 2N5551,116 application, or 2N5551,116 equivalent, key selection criteria include collector-emitter breakdown voltage, DC current gain consistency across operating currents, saturation voltage at defined drive conditions, thermal resistance, and noise figure in low-signal amplification contexts.

Technical Context

The 2N5551,116 operates as a silicon NPN bipolar junction transistor with a maximum junction temperature of 150 °C and thermal resistance R_th(j-a) = 200 K/W. Its design supports stable DC amplification up to 50 mA and switching duty with V_CE(sat) ≤ 200 mV at I_C = 50 mA / I_B = 5 mA.

It features f_T = 100–300 MHz and F = 8 dB (typ.) at 200 µA, making it suitable for medium-frequency signal conditioning where voltage gain and noise control are prioritized over RF power handling.

Key Specifications

Pinout & Package

2N5551,116 is housed in a plastic single-ended leaded (through-hole) TO-92 package, also designated SOT54 or SC-43A, with 3 leads and standard 2.54 mm lead pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage transistor applications.

Compared with MPSA42,116 and BC547C,116, the 2N5551,116 delivers optimal balance of voltage capability (160 V), gain stability (80–250), and noise performance (8 dB) for legacy telephony and industrial 48 V interface designs where neither extreme voltage nor ultra-low noise dominates.

Availability

2N5551,116 is available at Aetrix Electronics and suitable for telephone line interface circuits, relay driver modules, and analog audio pre-amplifier stages requiring stable component supply and long-term industrial availability.

Supply support for 2N5551,116 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia, formerly Philips Semiconductors, is a global leader in discrete and logic ICs, specializing in high-volume, high-reliability semiconductor components for automotive, industrial, and consumer applications.

The 2N5551,116 belongs to Nexperia's legacy high-voltage bipolar transistor product line, designed specifically for robust analog and switching functions in telephony infrastructure, industrial controls, and legacy communication equipment.

FAQ

What is the maximum collector-emitter voltage rating for the 2N5551,116?

The 2N5551,116 has a maximum collector-emitter voltage (V_CEO) rating of 160 V under open-base conditions. This specification is verified per IEC 60134 Absolute Maximum Ratings and applies across the full operating temperature range. Exceeding this voltage risks permanent device failure. The 2N5551,116 is therefore suited for applications such as telephone line interfaces where peak ringing voltages reach 120 V RMS.

What is the DC current gain (h_FE) range of the 2N5551,116 at 10 mA collector current?

The 2N5551,116 exhibits a DC current gain (h_FE) range of 80 to 250 when measured at V_CE = 5 V and I_C = 10 mA. This wide but well-characterized spread allows predictable base resistor selection in both switching and linear amplifier designs. The 2N5551,116 maintains usable gain down to I_C = 1 mA (min. 80) and up to I_C = 50 mA (min. 30), supporting flexible biasing strategies.

Is the 2N5551,116 suitable for low-noise audio pre-amplification?

Yes, the 2N5551,116 is suitable for low-noise audio pre-amplification, with a typical noise figure (F) of 8 dB at V_CE = 5 V, I_C = 200 µA, R_S = 2 kΩ, and frequency band 10 Hz–15.7 kHz. Its low I_CBO (≤50 nA at 120 V) and moderate f_T (100–300 MHz) support clean amplification in voice-band analog stages. The 2N5551,116 is commonly used in first-stage amplifiers of analog telephony hardware where SNR preservation is critical.

What package type does the 2N5551,116 use, and are its dimensions standardized?

The 2N5551,116 uses the TO-92 plastic package, also known as SOT54 or SC-43A, with three through-hole leads on a 2.54 mm pitch. Its outline conforms to JEDEC TO-92 and IEC 60196 standards, with maximum body dimensions of 4.8 mm × 4.2 mm × 14.5 mm. Lead coplanarity and form are controlled per Philips specification M3D186, ensuring compatibility with standard wave-solder and hand-solder processes.

How does the 2N5551,116 compare to the 2N5550 in terms of voltage and gain specifications?

The 2N5551,116 offers higher voltage ratings than the 2N5550: V_CEO = 160 V vs. 140 V, and V_CBO = 180 V vs. 160 V. Its DC current gain starts at 80 (vs. 60 for 2N5550) at I_C = 1 mA and maintains higher minimum values across all tested currents (e.g., min. 30 at 50 mA vs. 20). The 2N5551,116 also achieves lower noise (8 dB vs. 10 dB) and tighter V_CE(sat) (200 mV vs. 250 mV at 50 mA), making it the preferred choice for performance-critical high-voltage analog and switching roles.