NXP Semiconductors 2N5551,412
- Part No.:
- 2N5551,412
- Manufacturer:
- NXP Semiconductors
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Datasheet:
-
2N5551,412.pdf
- Description:
- TRANS NPN 160V 0.3A TO-92-3
- Quantity:
- Payment:

- Shipping:

Inventory:7,051
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Product details
Overview
2N5551,412 from Nexperia (formerly Philips Semiconductors) is an NPN high-voltage general-purpose transistor in a TO-92 (SOT54) package, rated for VCEO = 160 V, IC = 300 mA, and hFE = 80–250 at IC = 10 mA. It serves as a switching or linear amplification device in telephony line interface circuits and other medium-power HV analog/digital stages.
For engineers reviewing the 2N5551,412 datasheet, 2N5551,412 pinout, 2N5551,412 application, or 2N5551,412 equivalent, key selection criteria include collector-emitter breakdown voltage, DC current gain consistency across operating current, saturation voltage at drive levels, thermal resistance, and noise figure in low-signal amplification contexts.
Technical Context
This discrete NPN bipolar junction transistor operates with base-controlled current amplification and supports both linear amplification (e.g., audio preamp stages) and saturated switching (e.g., relay drivers). Its 160 V VCEO rating and 200 K/W Rth(j-a) define safe operating area boundaries under ambient-limited convection cooling.
It exhibits fT = 100–300 MHz and F = 8 dB (typ.) at 200 µA, confirming suitability for HF small-signal amplification up to ~100 MHz. The 6 pF collector capacitance and 30 pF emitter capacitance support stable high-frequency biasing when used with appropriate external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 160 V - maximum collector-emitter voltage before avalanche breakdown with base open; defines upper limit for HV switching applications. |
| IC (DC) | 300 mA - continuous collector current capability; sets max steady-state load drive without thermal runaway at Tamb ≤25 °C. |
| hFE | 80–250 - DC current gain range at VCE = 5 V, IC = 10 mA; enables predictable base drive sizing for switching or amplification. |
| VCE(sat) | ≤200 mV at IC = 50 mA / IB = 5 mA - low saturation voltage minimizes power loss and heating in on-state switching. |
| fT | 100–300 MHz - transition frequency confirms usable bandwidth for RF preamplifier or oscillator buffer roles up to VHF. |
| F (Noise) | 8 dB (typ.) at 200 µA - low noise figure supports use in sensitive analog front-end amplification where SNR matters. |
Pinout & Package
Package: TO-92 (SOT54), plastic single-ended leaded through-hole package with 3 leads; standardized footprint compatible with manual or wave solder assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Collector | Main current output terminal; connects to high-side load or supply rail in common-emitter configurations. |
| 2 | Base | Control input; requires current-limited drive (e.g., via resistor) to bias transistor into active or saturation region. |
| 3 | Emitter | Current return path; typically grounded or connected to low-side reference; defines common node for CE/CC/CB topologies. |
Key Features
| Feature | Design Value |
|---|---|
| High VCEO rating | 160 V enables direct interface with telephone line voltages (−48 V nominal, ±150 V ring) without external clamping. |
| Low noise figure | 8 dB typical at 200 µA supports clean signal amplification in telecom receiver front-ends and sensor interfaces. |
| Stable hFE over current range | hFE ≥80 at IC = 1 mA and ≥30 at IC = 50 mA ensures consistent gain behavior across small- and medium-signal operation. |
| Low VCE(sat) | ≤200 mV at 50 mA allows efficient switching of loads up to ~150 mW with minimal self-heating. |
Applications
| Telephone Line Interface | Relay Driver Circuit |
|---|---|
Use Scenario: Amplifying and switching signals on POTS (Plain Old Telephone Service) lines, including ring detection and off-hook control. IC Role / Device Role / Timing Role: NPN transistor configured in common-emitter mode for AC-coupled signal amplification and DC-level translation. Use Value: 160 V VCEO withstands ringing voltage transients (up to ±150 V); low noise preserves voice SNR in receive path. | Use Scenario: Driving electromagnetic relays requiring 20–100 mA coil current in industrial control panels. IC Role / Device Role / Timing Role: Saturated switch turning relay coil on/off using microcontroller GPIO with series base resistor. Use Value: ≤200 mV VCE(sat) at 50 mA limits power dissipation to <10 mW; 300 mA IC headroom accommodates relay inrush. |
| Audio Pre-amplifier Stage | High-Voltage Logic Level Shifter |
Use Scenario: Low-noise voltage amplification of microphone or piezoelectric sensor outputs in battery-powered equipment. IC Role / Device Role / Timing Role: Common-emitter amplifier biased at 200 µA for optimal noise performance and linearity. Use Value: 8 dB noise figure and fT >100 MHz support wideband audio capture up to 20 kHz with margin. | Use Scenario: Translating 3.3 V or 5 V logic signals to control 24–120 V DC loads in PLC I/O modules. IC Role / Device Role / Timing Role: High-side or low-side switch interfacing MCU outputs with higher-voltage external circuitry. Use Value: 160 V VCEO and 180 V VCBO provide robust isolation between logic and HV domains without extra protection diodes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-voltage transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| BC547B | VCEO = 45 V, hFE = 200–450, lower voltage rating, higher gain variation. | Not suitable for >60 V applications; limited to low-voltage logic or signal amplification. | Select only if operating voltage stays below 45 V and tighter hFE tolerance is required. |
| MPSA42 | VCEO = 300 V, IC = 500 mA, higher voltage/current but larger Rth(j-a) = 250 K/W. | Better for >200 V flyback snubbers or CRT deflection; less thermally efficient at same power level. | Prefer when absolute breakdown margin >250 V is mandatory and PCB layout allows for higher thermal impedance. |
Compared with BC547B and MPSA42, the 2N5551,412 delivers balanced performance: sufficient 160 V rating for telecom and industrial HV interfaces, moderate gain stability, and better thermal efficiency than MPSA42 while offering higher voltage capability than BC547B.
Availability
2N5551,412 is available at Aetrix Electronics and suitable for telephone line interface circuits, relay driver designs, audio pre-amplifier stages, and high-voltage logic level shifter applications requiring stable component supply and long-term obsolescence management.
Supply support for 2N5551,412 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia, formerly Philips Semiconductors, is a global leader in high-volume discrete and logic ICs, headquartered in Nijmegen, Netherlands, with manufacturing in Asia and Europe.
The 2N5551,412 belongs to Nexperia's legacy high-voltage bipolar transistor family, designed specifically for reliability-critical analog switching and amplification in telecom infrastructure, industrial controls, and legacy equipment replacement.
FAQ
What is the maximum collector-emitter voltage rating for the 2N5551,412?
The 2N5551,412 has a maximum collector-emitter voltage (VCEO) rating of 160 V under open-base conditions. This specification is defined per IEC 60134 Absolute Maximum Ratings and must not be exceeded to prevent irreversible avalanche breakdown. Derating is recommended above 70 °C ambient temperature due to junction temperature limits.
Does the 2N5551,412 have a specified noise figure, and under what conditions?
Yes, the 2N5551,412 has a typical noise figure (F) of 8 dB, measured at VCE = 5 V, IC = 200 µA, RS = 2 kΩ, and frequency range 10 Hz to 15.7 kHz. This value is confirmed in the original Philips datasheet and reflects its suitability for low-noise small-signal amplification in telecom and sensor front-ends.
What package type is used for the 2N5551,412, and is it RoHS compliant?
The 2N5551,412 is supplied in a TO-92 plastic package (SOT54), with lead spacing of 2.54 mm and standard through-hole mounting. As a Nexperia legacy product, it complies with RoHS Directive 2011/65/EU; full compliance documentation is available upon request for production lots.
How does the DC current gain (hFE) of the 2N5551,412 vary with collector current?
The 2N5551,412 exhibits hFE = 80–250 at IC = 10 mA, hFE = 30–250 at IC = 50 mA, and hFE ≥80 at IC = 1 mA. This behavior indicates stable gain across three decades of collector current, supporting both small-signal amplification and medium-current switching without gain collapse.
Is the 2N5551,412 pin-compatible with the 2N5550, and what are the key electrical differences?
Yes, the 2N5551,412 is pin-compatible with the 2N5550 in the same TO-92 package. Key differences include higher VCBO (180 V vs. 160 V), higher VCEO (160 V vs. 140 V), lower noise figure (8 dB vs. 10 dB), and higher minimum hFE (80 vs. 60 at IC = 1 mA), making the 2N5551,412 preferable for higher-voltage or lower-noise implementations.
2N5551,412 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 300 mA
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Power - Max:
- 630 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N5551,412 FAQ
1.How can I place an order for 2N5551,412 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5551,412 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5551,412 reliable?
The price and inventory of 2N5551,412 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5551,412 is usually 5 days.
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Once your 2N5551,412 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5551,412?
For technical support, including 2N5551,412 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5551,412 requirements.
6.How does Aetrix verify that 2N5551,412 is sourced from the original manufacturer or authorized distributors?
All 2N5551,412 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5551,412 meets industry standards.
7.What is the process for return or replacement of 2N5551,412?
All 2N5551,412 units undergo pre-shipment inspection (PSI). If there is an issue with 2N5551,412, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5551,412 part is unused and in its original packaging.
Return procedure for 2N5551,412:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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