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onsemi 2N5551_J18Z
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- Part No.:
- 2N5551_J18Z
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
2N5551_J18Z.pdf
- Description:
- TRANS NPN 160V 0.6A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,764
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Product details
Overview
2N5551_J18Z from ON Semiconductor is an NPN general-purpose amplifier optimized for high-voltage amplification and gas discharge display driver circuits, featuring VCEO = 160 V, IC = 600 mA continuous, hFE = 80–250 (at IC = 10 mA), fT = 100 MHz, and TO-92 package with center-collector pinout (Pin 1: Emitter, Pin 2: Collector, Pin 3: Base).
For engineers reviewing the 2N5551_J18Z datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage breakdown capability, DC current gain consistency across operating currents, thermal resistance (RθJA = 200 °C/W), saturation voltage performance at 10–50 mA drive levels, and compatibility with legacy TO-92-based display and linear amplifier designs.
Technical Context
The 2N5551_J18Z operates as a discrete NPN bipolar junction transistor with fixed lead-frame geometry and epoxy-molded TO-92 package. Its design supports stable DC amplification and switching up to 100 MHz, with validated performance under VCE ≤ 160 V and IC ≤ 600 mA, and specified thermal derating of 5.0 mW/°C above 25°C ambient.
It exhibits low noise figure (NF = 8.0 dB at IC = 250 μA), tight input/output capacitance (Cibo = 20 pF, Cobo = 6.0 pF), and defined saturation behavior (VCE(sat) = 0.15 V at IC = 10 mA / IB = 1.0 mA), enabling predictable biasing in analog gain stages and high-side switch drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 160 V - Maximum collector-emitter voltage before breakdown; enables use in 120 V AC line-referenced or flyback auxiliary circuits. |
| IC (continuous) | 600 mA - Sustained collector current handling; supports medium-power switching and linear amplification without forced cooling. |
| hFE range | 80–250 at IC = 10 mA - Wide DC current gain band allows flexible bias design across production lots and temperature ranges. |
| fT | 100 MHz - Current gain bandwidth product; supports RF preamp and broadband signal amplification up to VHF frequencies. |
| RθJA | 200 °C/W - Junction-to-ambient thermal resistance in standard FR-4 PCB layout; defines maximum power dissipation at given ambient temperature. |
| VCE(sat) | 0.15 V at IC = 10 mA / IB = 1.0 mA - Low saturation voltage minimizes conduction loss in switching applications and improves efficiency in driver stages. |
| Cobo | 6.0 pF at VCB = 10 V - Output capacitance limits high-frequency roll-off and affects stability in tuned amplifier configurations. |
Pinout & Package
2N5551_J18Z uses the TO-92 3-lead molded package with center-collector configuration (suffix "-C" per ordering table). Package dimensions comply with JEDEC TO-92 standards, with straight leads and 0.200-inch inline spacing (J62Z option).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Current sink terminal; connects to ground or low-impedance return path in common-emitter amplifier or switch topologies. |
| 2 | Collector | High-voltage output node; interfaces with load, pull-up resistor, or transformer primary in display driver and HV amplifier stages. |
| 3 | Base | Control input; requires current-limited drive (e.g., via series resistor) to achieve target hFE-dependent collector current. |
Key Features
| Feature | Design Value |
|---|---|
| High-voltage breakdown rating | VCEO = 160 V and VCBO = 180 V ensure reliable operation in 100–120 V AC-derived supply rails and neon lamp driver circuits. |
| Low-noise amplification | NF = 8.0 dB at 10 Hz–15.7 kHz enables audio preamplifier and sensor signal conditioning without added noise degradation. |
| Thermally robust packaging | TO-92 package with RθJA = 200 °C/W supports 625 mW dissipation at 25°C ambient, suitable for non-ventilated industrial enclosures. |
| Predictable saturation behavior | VCE(sat) ≤ 0.20 V up to IC = 50 mA ensures minimal voltage drop and power loss in active-low switching applications. |
| Stable small-signal gain | hFE ≥ 80 at IC = 1.0 mA and ≥ 30 at IC = 50 mA provides usable gain across three decades of collector current for wide-dynamic-range designs. |
Applications
| Gas Discharge Display Driver | High-Voltage Linear Amplifier |
|---|---|
|
Use Scenario: Driving individual segments of neon or nixie tubes requiring 90–150 V anode swing and ~1–5 mA segment current. IC Role / Device Role / Timing Role: Discrete NPN switch controlling current flow through display element; operates in saturated or active region depending on brightness control method. Use Value: VCEO = 160 V and IC = 600 mA allow direct interface to unregulated HV supplies without external snubbing or clamping. |
Use Scenario: Amplifying low-level sensor signals (e.g., piezoelectric transducers, photomultiplier anodes) in test equipment with ±100 V supply rails. IC Role / Device Role / Timing Role: Common-emitter amplifier stage providing 20–40 dB midband gain with bandwidth extending beyond 10 MHz. Use Value: fT = 100 MHz and Cobo = 6.0 pF support stable gain flatness up to 15 MHz, minimizing phase distortion in pulse-amplification paths. |
| Industrial Relay Driver | Legacy Analog Power Supply Error Amplifier |
|
Use Scenario: Switching 24–48 V DC coils with inrush currents up to 400 mA in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Medium-power NPN buffer isolating microcontroller GPIO from inductive load; used with freewheeling diode. Use Value: VCE(sat) ≤ 0.20 V at IC = 50 mA reduces self-heating during sustained coil energization, improving long-term reliability. |
Use Scenario: Implementing error amplification in linear regulated power supplies delivering 0–30 V / 0–3 A with <10 mV ripple rejection. IC Role / Device Role / Timing Role: High-gain, low-drift differential pair component in feedback loop; biased at IC = 1–10 mA for optimal hFE stability. Use Value: hFE = 80–250 at IC = 10 mA enables precise closed-loop gain setting with minimal temperature-induced drift over –40°C to +125°C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT5551 | SOT-23 package (vs. TO-92), lower PD = 350 mW, RθJA = 357 °C/W, same electrical specs except reduced thermal capability. | Preferred for space-constrained PCBs and automated SMT assembly; unsuitable for >250 mW continuous dissipation. | Select MMBT5551 when board area and reflow compatibility outweigh thermal margin requirements. |
| 2N5401 | PNP complement with matching VCEO = 160 V, but opposite polarity; hFE = 60–240, fT = 100 MHz, same TO-92 package. | Used in complementary emitter-follower or push-pull output stages where matched NPN/PNP characteristics are required. | Choose 2N5401 only when building symmetrical amplifier topologies or dual-rail driver circuits needing polarity inversion. |
Compared with MMBT5551, 2N5551_J18Z offers higher power dissipation and better thermal management in through-hole designs; compared with 2N5401, it provides NPN polarity essential for high-side switching and common-emitter gain configurations without level-shifting.
Availability
2N5551_J18Z is available at Aetrix Electronics and suitable for gas discharge display driver circuits, industrial relay driver modules, and high-voltage linear amplifier designs requiring stable component supply and long-term obsolescence mitigation.
Supply support for 2N5551_J18Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2N5551_J18Z belongs to ON Semiconductor's legacy general-purpose transistor product line, originally developed by Fairchild Semiconductor for high-voltage analog and display driver applications requiring rugged, cost-effective discrete amplification.
FAQ
What is the pin configuration of the 2N5551_J18Z?
The 2N5551_J18Z uses a TO-92 package with center-collector pinout: Pin 1 is Emitter, Pin 2 is Collector, and Pin 3 is Base. This configuration is confirmed in the Fairchild/ON Semiconductor datasheet ordering table under suffix "-C", and matches mechanical drawings J62Z and TO-92AM3.
Does the 2N5551_J18Z support high-frequency amplification?
Yes, the 2N5551_J18Z has a current gain bandwidth product (fT) of 100 MHz at IC = 10 mA and VCE = 10 V, enabling stable small-signal amplification up to VHF frequencies. Its Cobo = 6.0 pF and Cibo = 20 pF further support broadband impedance matching in tuned RF stages.
What is the maximum power dissipation of the 2N5551_J18Z?
The 2N5551_J18Z has a total device dissipation (PD) of 625 mW at TA = 25°C, with thermal derating of 5.0 mW/°C above that temperature. This value is validated under standard FR-4 PCB conditions and reflects its TO-92 package's thermal performance.
How does the 2N5551_J18Z perform in switching applications?
The 2N5551_J18Z delivers VCE(sat) = 0.15 V at IC = 10 mA / IB = 1.0 mA and 0.20 V at IC = 50 mA / IB = 5.0 mA, enabling efficient on-state conduction in medium-speed switching circuits such as display segment drivers and relay interfaces.
Is the 2N5551_J18Z suitable for low-noise analog signal amplification?
Yes, the 2N5551_J18Z specifies a noise figure (NF) of 8.0 dB at IC = 250 μA, VCE = 5.0 V, RS = 1.0 kΩ, and 10 Hz–15.7 kHz bandwidth, making it appropriate for low-level audio preamplifiers, sensor front-ends, and instrumentation amplifier input stages.
2N5551_J18Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 100MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
2N5551_J18Z FAQ
1.How can I place an order for 2N5551_J18Z through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5551_J18Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5551_J18Z reliable?
The price and inventory of 2N5551_J18Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5551_J18Z is usually 5 days.
3.What payment methods are accepted for 2N5551_J18Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5551_J18Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5551_J18Z?
2N5551_J18Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5551_J18Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5551_J18Z?
For technical support, including 2N5551_J18Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5551_J18Z requirements.
6.How does Aetrix verify that 2N5551_J18Z is sourced from the original manufacturer or authorized distributors?
All 2N5551_J18Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5551_J18Z meets industry standards.
7.What is the process for return or replacement of 2N5551_J18Z?
All 2N5551_J18Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5551_J18Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5551_J18Z part is unused and in its original packaging.
Return procedure for 2N5551_J18Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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