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onsemi 2N5551RL1G
- Part No.:
- 2N5551RL1G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Datasheet:
-
2N5551RL1G.pdf
- Description:
- TRANS NPN 160V 0.6A TO92
- Quantity:
- Payment:
- Shipping:
Inventory:7,597
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Product details
Overview
2N5551RL1G from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for 160 VCEO, 180 VCBO, 600 mA continuous collector current, and 625 mW power dissipation at TA = 25°C. It delivers DC current gain (hFE) of 80–250 at IC = 1.0–50 mA and supports high-frequency amplification up to 300 MHz fT, commonly used in low-noise preamplifier stages and switching circuits.
For engineers reviewing the 2N5551RL1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 160 V breakdown rating, TO-92 leaded package compatibility with through-hole prototyping, low 8 dB noise figure at 1 kHz, and verified performance across −55°C to +150°C junction temperature range.
Technical Context
The 2N5551RL1G operates as a discrete NPN bipolar junction transistor optimized for medium-voltage linear amplification and fast-switching applications. Its design emphasizes high VCEO/VCBO margin, stable hFE across collector currents from 1 mA to 50 mA, and low Cibo (20 pF) for improved high-frequency response.
It features a thermal resistance RJA of 200°C/W and RJC of 83.3°C/W, enabling reliable operation under moderate power dissipation without forced cooling. The device meets Pb-free requirements per J-STD-609 and is qualified for industrial temperature range operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 160 V - Supports amplifier or switch designs requiring ≥150 V rail tolerance before breakdown. |
| IC (max) | 600 mA - Enables drive capability for small relays, LED arrays, or logic-level interface loads. |
| hFE @ IC=10 mA | 80–250 - Ensures predictable base drive sizing for bias networks in Class-A amplifiers. |
| fT | 100–300 MHz - Validates usability in RF preamp, oscillator, and broadband signal conditioning up to VHF. |
| NF @ 1 kHz | 8.0 dB - Confirmed low-noise performance suitable for audio front-end and sensor signal amplification. |
| PD @ TA=25°C | 625 mW - Defines maximum ambient-operated power before derating; requires heatsinking above 25°C. |
| Cibo | 20 pF - Limits Miller capacitance impact on high-frequency stability in common-emitter configurations. |
Pinout & Package
2N5551RL1G uses the standard TO-92 (Case 29-11) plastic package with straight leads and Pb-free finish. Dimensions conform to JEDEC TO-226 outline: body height ~4.7 mm, lead pitch 1.27 mm, and total length ~4.7 mm. Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - verified per onsemi marking diagram and package drawing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Emitter) | Current exit path for majority carriers | Connected to ground or low-impedance return; sets DC bias reference point in CE/CC configurations. |
| Pin 2 (Base) | Control electrode for minority carrier injection | Requires current-limited drive (e.g., via 10 kΩ resistor); sensitive to ESD due to low VEBO = 6 V. |
| Pin 3 (Collector) | Current collection node under reverse-biased junction | Connected to supply rail or load; must withstand transient spikes up to 180 VCBO in off-state. |
Key Features
| Feature | Design Value |
|---|---|
| High VCBO (180 V) | Enables robust operation in flyback snubber circuits and high-side switching where collector swings above supply. |
| Low noise figure (8.0 dB) | Reduces signal degradation in microphone preamps and instrumentation front-ends without external filtering. |
| Pb-free TO-92 packaging | Complies with RoHS Directive 2011/65/EU and supports automated through-hole assembly with standard reflow profiles. |
| Wide TJ range (−55°C to +150°C) | Validates use in automotive engine compartments, industrial PLC I/O modules, and outdoor telecom equipment. |
| Verified fT ≥ 100 MHz | Supports stable gain in 27 MHz ISM band amplifiers and crystal oscillator buffer stages without compensation. |
Applications
| Audio Preamplifier Stage | Switch-Mode Power Supply Driver |
|---|---|
|
Use Scenario: Low-noise voltage amplification of electret microphone output prior to ADC sampling. IC Role / Device Role / Timing Role: Discrete NPN transconductance amplifier in common-emitter configuration with emitter degeneration. Use Value: 8.0 dB noise figure and hFE ≥ 80 at 1 mA ensure ≥65 dB SNR in 20 Hz–20 kHz bandwidth without active filtering. |
Use Scenario: Driving gate of MOSFET in 100 kHz flyback converter auxiliary winding feedback circuit. IC Role / Device Role / Timing Role: Fast-switching NPN transistor acting as level-shifting interface between optocoupler output and PWM controller enable pin. Use Value: 300 MHz fT and 0.25 V VCE(sat) at IC/IB = 10 ensure <50 ns turn-on delay and minimal conduction loss during transient events. |
| Industrial Sensor Signal Conditioning | Legacy TTL/CMOS Logic Interface |
|
Use Scenario: Amplifying millivolt-level thermocouple outputs in programmable logic controller (PLC) analog input modules. IC Role / Device Role / Timing Role: Precision DC-coupled NPN amplifier with matched base bias network for offset cancellation. Use Value: Stable hFE over −40°C to +85°C and 160 VCEO allow direct connection to 24 V field wiring with surge immunity. |
Use Scenario: Converting 3.3 V CMOS logic signals to 5 V TTL-compatible levels for legacy microcontroller peripherals. IC Role / Device Role / Timing Role: Single-transistor level shifter with open-collector output and pull-up to 5 V rail. Use Value: 600 mA IC rating supports driving multiple 74LS inputs simultaneously; TO-92 footprint simplifies manual repair and BOM consolidation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN amplifier transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MPSA42 | Higher VCEO = 300 V, lower hFE = 40–120, same TO-92 package | Better suited for high-voltage AC line sensing; less ideal for low-noise audio due to higher NF (10 dB) | Select when >200 V breakdown is mandatory and gain consistency is secondary. |
| BC547C | Lower VCEO = 45 V, higher hFE = 420, similar fT ≈ 300 MHz | Optimized for low-voltage digital switching and audio gain stages below 12 V rails | Prefer for battery-powered portable devices where voltage headroom is limited and high β reduces base drive burden. |
Compared with MPSA42 and BC547C, the 2N5551RL1G uniquely balances 160 V ruggedness, 8 dB noise performance, and TO-92 manufacturability-making it the preferred choice for industrial-grade analog signal chains operating from 12–48 V supplies.
Availability
2N5551RL1G is available at Aetrix Electronics and suitable for industrial sensor interfaces, audio preamplifier circuits, and switch-mode power supply driver stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant through-hole assembly.
Supply support for 2N5551RL1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2N5551RL1G belongs to onsemi's legacy discrete transistor portfolio designed for reliability-critical linear amplification and medium-speed switching in industrial control and instrumentation systems.
FAQ
What is the maximum collector-emitter voltage rating for the 2N5551RL1G?
The 2N5551RL1G has a guaranteed minimum collector-emitter breakdown voltage V(BR)CEO of 160 Vdc at IC = 1.0 mAdc and IB = 0. This rating is validated per onsemi's 2N5550/D datasheet Rev. 5 and applies to the 2N5551RL1G variant specifically. Operation above this voltage risks irreversible avalanche failure.
Does the 2N5551RL1G have a Pb-free package?
Yes, the 2N5551RL1G uses a Pb-free TO-92 package compliant with J-STD-609 and RoHS Directive 2011/65/EU. The "G" suffix in the part number explicitly denotes Pb-free construction, and the device is qualified for standard SnPb and lead-free solder reflow profiles per onsemi's SOLDERINGRM/D reference manual.
What is the typical noise figure of the 2N5551RL1G and under what conditions is it measured?
The 2N5551RL1G has a typical noise figure of 8.0 dB measured at IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, and f = 1.0 kHz, as specified in the onsemi 2N5550/D datasheet. This value is confirmed for the 2N5551 variant and reflects its suitability for low-noise analog front-end applications.
Can the 2N5551RL1G be used as a direct replacement for the 2N5550 in existing designs?
The 2N5551RL1G is not a direct drop-in replacement for the 2N5550 due to higher voltage ratings (160 V vs. 140 V VCEO, 180 V vs. 160 V VCBO) and slightly different hFE distribution. While electrically compatible in most circuits, designers should verify bias stability and transient margin when substituting, especially in high-voltage or precision gain applications.
What is the thermal resistance junction-to-ambient (RJA) for the 2N5551RL1G in free-air conditions?
The 2N5551RL1G has a maximum thermal resistance RJA of 200°C/W when mounted on a standard FR-4 PCB with no copper pour or heatsink, per onsemi's thermal characterization in the 2N5550/D datasheet. Derating begins above 25°C ambient at 5.0 mW/°C for safe continuous operation up to 625 mW.
2N5551RL1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92 (TO-226)
2N5551RL1G FAQ
1.How can I place an order for 2N5551RL1G through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5551RL1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5551RL1G reliable?
The price and inventory of 2N5551RL1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5551RL1G is usually 5 days.
3.What payment methods are accepted for 2N5551RL1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5551RL1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5551RL1G?
2N5551RL1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5551RL1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5551RL1G?
For technical support, including 2N5551RL1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5551RL1G requirements.
6.How does Aetrix verify that 2N5551RL1G is sourced from the original manufacturer or authorized distributors?
All 2N5551RL1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5551RL1G meets industry standards.
7.What is the process for return or replacement of 2N5551RL1G?
All 2N5551RL1G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5551RL1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5551RL1G part is unused and in its original packaging.
Return procedure for 2N5551RL1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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