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onsemi 2N5551RLRP
- Part No.:
- 2N5551RLRP
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Datasheet:
-
2N5551RLRP.pdf
- Description:
- TRANS NPN 160V 0.6A TO92
- Quantity:
- Payment:
- Shipping:
Inventory:9,855
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Product details
Overview
2N5551RLRP from onsemi is an NPN silicon general-purpose amplifier transistor in TO-92 package, rated for VCEO = 160 V, IC = 600 mA, and fT = 100–300 MHz. It delivers hFE ≥ 80 at IC = 1.0 mA and supports low-noise amplification (NF = 8.0 dB) in RF front-ends and signal conditioning stages.
For engineers reviewing the 2N5551RLRP datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, DC current gain consistency across temperature, saturation voltage at switching currents, thermal resistance (RθJC = 83.3°C/W), and Pb-free tape-and-ammo packaging compliance.
Technical Context
This discrete NPN bipolar junction transistor operates in linear amplification and medium-speed switching modes. Its design emphasizes high VCBO = 180 V and low Cibo = 20 pF to support stable gain in broadband preamplifier and driver circuits up to ~100 MHz.
It features a fixed lead-frame TO-92 configuration with emitter-base breakdown limited to 6.0 V and guaranteed hFE ≥ 30 at IC = 50 mA, enabling predictable biasing in Class-A and emitter-follower topologies without external compensation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 160 Vdc - supports operation in 120 V rail systems with 33% safety margin |
| IC (continuous) | 600 mAdc - enables drive capability for small-signal loads up to ~1 W at VCE = 5 V |
| fT | 100–300 MHz - usable in VHF amplifiers and fast-switching logic interfaces |
| hFE @ 1 mA | ≥80 - ensures reliable base-current-limited bias stability in low-power gain stages |
| VCE(sat) @ 10 mA | ≤0.25 Vdc - minimizes conduction loss in saturated-switch applications |
| NF @ 250 μA | 8.0 dB - suitable for low-noise analog front-end amplification |
| RθJC | 83.3°C/W - allows direct heatsinking via collector lead in thermally constrained PCB layouts |
Pinout & Package
Package: TO-92 (Case 29-11), molded plastic with axial leads; standardized for through-hole mounting and manual prototyping. Dimensions per ANSI Y14.5M: body height ≤ 5.20 mm, lead pitch 2.54 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Emitter) | Current sink terminal | Reference node for bias network; connects to ground or negative rail in common-emitter configurations |
| 2 (Base) | Control input | Receives forward-biased current to modulate collector current; requires series resistor for current limiting |
| 3 (Collector) | Current source terminal | Delivers amplified output current; electrically connected to heatsink-capable PCB copper pour when mounted |
Key Features
| Feature | Design Value |
|---|---|
| High VCBO rating | 180 Vdc - reduces risk of avalanche failure during transient overvoltage events in inductive load switching |
| Low input capacitance | Cibo = 20 pF - preserves high-frequency gain stability and reduces Miller effect in wideband amplifiers |
| Pb-free packaging | RoHS-compliant TO-92 - meets environmental compliance requirements without derating or solderability compromise |
| Wide operating temperature | −55°C to +150°C junction range - supports deployment in industrial control and automotive under-hood environments |
| Controlled hFE spread | Min 80 at 1 mA - simplifies production-level bias design without binning or trim adjustments |
Applications
| RF Preamplifier Stage | High-Voltage Switch Driver |
|---|---|
Use Scenario: Amplifying weak signals from antenna or sensor outputs before ADC sampling in sub-100 MHz receivers. IC Role / Device Role / Timing Role: Discrete NPN amplifier configured in common-emitter topology with resistive bias network. Use Value: Delivers 8.0 dB noise figure and >100 MHz fT to maintain SNR integrity while supporting compact layout with minimal external components. | Use Scenario: Driving relay coils or MOSFET gates requiring 10–50 mA collector current at 120 V supply rails. IC Role / Device Role / Timing Role: Saturated switch controlling inductive load activation with flyback protection. Use Value: With VCEO = 160 V and VCE(sat) ≤ 0.25 V, it sustains safe operation during turn-off transients and minimizes power dissipation during on-state. |
| Low-Noise Audio Preamp | Industrial Signal Conditioning |
Use Scenario: First-stage amplification of microphone or piezoelectric sensor outputs in battery-powered instrumentation. IC Role / Device Role / Timing Role: Common-emitter amplifier biased at 250 μA for optimal noise performance. Use Value: Achieves 8.0 dB NF at 1 kHz while maintaining hFE ≥ 80, enabling high-gain, low-distortion signal capture with single-supply operation. | Use Scenario: Level-shifting and isolation of 4–20 mA loop signals in PLC I/O modules operating across −40°C to +85°C ambient. IC Role / Device Role / Timing Role: Linear current buffer with emitter-follower configuration for impedance transformation. Use Value: Stable hFE across temperature and RθJC = 83.3°C/W allow direct thermal coupling to chassis ground, ensuring long-term calibration retention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN amplifier transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N5551G | Pb-free TO-92 variant with identical electrical specs; same VCEO, hFE, and fT ratings | Supplied in bulk (5000/unit box) vs. tape-and-ammo (2000/unit) for 2N5551RLRP | Select 2N5551G for hand-soldered prototypes or low-volume assembly where reel handling is unnecessary |
| MPSA42 | Higher VCEO = 300 V but lower fT = 50 MHz and hFE = 40–120; larger TO-92 footprint with different pinout (E-B-C vs. E-B-C confirmed same) | Better suited for high-voltage AC line sensing; less optimal for RF or low-noise audio | Choose MPSA42 only when >200 V breakdown is mandatory and bandwidth <50 MHz is acceptable |
Compared with 2N5551G and MPSA42, the 2N5551RLRP offers optimized balance of high-voltage tolerance, RF bandwidth, and low-noise performance in a tape-and-ammo format ideal for automated SMT-compatible through-hole insertion processes.
Availability
2N5551RLRP is available at Aetrix Electronics and suitable for RF preamplifier stages, high-voltage switch drivers, and low-noise audio preamps requiring stable component supply, consistent parametric yield, and RoHS-compliant packaging.
Supply support for 2N5551RLRP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient innovation for automotive, industrial, cloud, and IoT applications.
The 2N5551RLRP belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for reliability in analog signal amplification, switching, and interface functions across commercial and industrial temperature ranges.
FAQ
What is the maximum continuous collector current rating for the 2N5551RLRP?
The 2N5551RLRP has a maximum continuous collector current (IC) rating of 600 mAdc at TA = 25°C. Derating applies above this temperature-5.0 mW/°C for ambient-limited operation and 12 mW/°C when case-mounted with heatsinking. This rating ensures safe operation in linear amplification and medium-duty switching roles without thermal runaway under defined PCB thermal conditions.
Does the 2N5551RLRP have Pb-free construction?
Yes, the 2N5551RLRP is a Pb-free device compliant with RoHS Directive 2011/65/EU. Its TO-92 package uses lead-free molding compound and termination plating, verified per onsemi's Pb-Free Packaging Specification. The "G" suffix (e.g., 2N5551RLRPG) denotes the same Pb-free construction, while 2N5551RLRP itself carries implicit Pb-free compliance per onsemi's preferred-device designation in the datasheet.
What is the pin configuration of the 2N5551RLRP in the TO-92 package?
The 2N5551RLRP uses standard TO-92 Style 1 pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector-viewed with flat side facing outward and leads pointing downward. This matches JEDEC TO-226AA mechanical outline and is confirmed in the onsemi datasheet Figure 6 marking diagram and Package Dimensions table. No alternate pinouts exist for this part number.
How does the 2N5551RLRP compare to the 2N5550 in terms of voltage ratings?
The 2N5551RLRP provides higher voltage ratings than the 2N5550: VCEO = 160 V versus 140 V, and VCBO = 180 V versus 160 V. Both share identical package, pinout, and thermal characteristics, but the 2N5551RLRP's enhanced breakdown margins make it preferable in 120 VAC-derived supplies or inductive load switching where transient overshoot exceeds 140 V.
Is the 2N5551RLRP suitable for low-noise amplifier designs?
Yes, the 2N5551RLRP is specified for low-noise operation with a typical noise figure (NF) of 8.0 dB at IC = 250 μA, VCE = 5.0 V, RS = 1.0 kΩ, and f = 1.0 kHz. Its low Cibo = 20 pF and controlled hFE spread further support repeatable noise performance in discrete preamplifier stages-particularly in microphone, sensor, and RF front-end applications where signal integrity is critical.
2N5551RLRP Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 Long Body, Formed Leads
- Packaging:
- Tape & Box (TB)
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 600 mA
- Voltage - Collector Emitter Breakdown (Max):
- 160 V
- Vce Saturation (Max) @ Ib, Ic:
- 200mV @ 5mA, 50mA
- Current - Collector Cutoff (Max):
- 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 80 @ 10mA, 5V
- Power - Max:
- 625 mW
- Frequency - Transition:
- 300MHz
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92 (TO-226)
2N5551RLRP FAQ
1.How can I place an order for 2N5551RLRP through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5551RLRP on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5551RLRP reliable?
The price and inventory of 2N5551RLRP are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5551RLRP is usually 5 days.
3.What payment methods are accepted for 2N5551RLRP?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5551RLRP transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5551RLRP?
2N5551RLRP orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5551RLRP order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5551RLRP?
For technical support, including 2N5551RLRP datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5551RLRP requirements.
6.How does Aetrix verify that 2N5551RLRP is sourced from the original manufacturer or authorized distributors?
All 2N5551RLRP products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5551RLRP meets industry standards.
7.What is the process for return or replacement of 2N5551RLRP?
All 2N5551RLRP units undergo pre-shipment inspection (PSI). If there is an issue with 2N5551RLRP, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5551RLRP part is unused and in its original packaging.
Return procedure for 2N5551RLRP:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N5551RLRP Tags
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MMBT3906LT1G
onsemi
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MMBT3904-7-F
Diodes Incorporated
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MMBT3904LT1G
onsemi
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MMBT3906-7-F
Diodes Incorporated
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MMBT3904-TP
Micro Commercial Co
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MMBT2222A-7-F
Diodes Incorporated
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BC846BLT1G
onsemi
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BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
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MMBT2222A-TP
Micro Commercial Co
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MMBTA06LT1G
onsemi
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MMBT2222ALT1G
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