onsemi 2N5657G

Overview

2N5657G from onsemi is a plastic NPN silicon high-voltage power transistor rated for 350 V_CEO, 0.5 A continuous collector current, and 20 W total device dissipation at T_C = 25°C. It delivers DC current gain ≥15 at I_C = 250 mA and features a 10 MHz f_T with 25 pF output capacitance. It is used in AC line relays and low-current, high-voltage converters.

For engineers reviewing the 2N5657G datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO(sus) = 350 V, R_JC = 6.25 °C/W, safe operating area limits up to 300 V/0.5 A (10 ms), and Pb-free TO-225 package compatibility with industrial thermal management requirements.

Technical Context

This NPN bipolar junction transistor operates in linear and switching modes with specified sustaining voltage under inductive load conditions (V_CEO(sus) = 350 V at I_C = 100 mA, L = 50 mH). Its thermal resistance of 6.25 °C/W enables stable operation up to T_J = +150°C when mounted on heatsinks meeting case temperature derating curves.

Electrical behavior is characterized across temperature extremes (–65°C to +150°C), with h_FE ranging from 5.0 (I_C = 500 mA) to 30 (I_C = 100 mA) at 25°C, and V_CE(sat) ≤ 2.5 V at I_C = 250 mA/I_B = 25 mA. Second breakdown limits govern pulse operation per Figure 3.

Key Specifications

Pinout & Package

2N5657G is housed in a Pb-free TO-225 package (Case 77-09, Style 1), with mechanical dimensions including D = 10.6–11.1 mm, E = 7.4–7.8 mm, and L = 14.5–16.63 mm. The package features a backside tab electrically connected to the collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage power transistor applications.

Compared with MJD127G and BU508AF, the 2N5657G provides the only combination of 350 V_CEO, TO-225 form factor, and 6.25 °C/W thermal resistance suitable for thermally constrained AC line interface circuits requiring precise SOA control.

Availability

2N5657G is available at Aetrix Electronics and suitable for AC line relay drivers, high-voltage DC-DC converters, and industrial solid-state relays requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for 2N5657G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5657G belongs to onsemi's legacy high-voltage bipolar transistor product line, designed specifically for ruggedized line-operated equipment including audio amplifiers, AC relays, and low-current HV converters where reliability under sustained voltage stress is critical.

FAQ

What is the maximum collector-emitter sustaining voltage for the 2N5657G?

The 2N5657G has a collector-emitter sustaining voltage V_CEO(sus) of 350 Vdc under inductive load conditions (I_C = 100 mAdc, L = 50 mH). This value is confirmed in the Electrical Characteristics table and reflects guaranteed operation during switching transients in relay and converter applications. It exceeds the 250 V rating of the 2N5655G variant, making the 2N5657G the preferred choice for 240 VAC-derived systems.

Does the 2N5657G have a documented safe operating area for pulsed operation?

Yes, the 2N5657G safe operating area (SOA) is documented in Figure 3 of the official datasheet, covering pulse widths from 10 μs to 10 s at T_J = 150°C. For example, it supports 300 V at 0.5 A for 10 ms, bounded by second breakdown and thermal limits. This SOA data is specific to the 2N5657G and differs from the 2N5655G curve shown alongside it in the same figure.

What is the thermal resistance junction-to-case for the 2N5657G?

The 2N5657G has a thermal resistance R_JC of 6.25 °C/W, measured from junction to case surface per JEDEC test methods. This value applies to the TO-225 package (Case 77-09) and is used to calculate required heatsink thermal resistance when operating at 20 W dissipation. Derating begins at T_C = 25°C at 0.16 W/°C, as specified in the Maximum Ratings table.

Is the 2N5657G pin-compatible with other TO-225 transistors like the 2N5551?

No, the 2N5657G is not pin-compatible with the 2N5551. While both use TO-225 packages, the 2N5657G (Style 1) assigns Pin 1 to Emitter, Pins 2/4 to Collector, and Pin 3 to Base; the 2N5551 uses a different pinout (Emitter-Base-Collector). Substituting without verifying pin mapping risks circuit damage. Always consult the marking diagram and mechanical outline for the exact 2N5657G configuration.

What does the 'G' suffix indicate in the 2N5657G part number?

The 'G' suffix in 2N5657G indicates full compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A for lead-free terminations and halogen-free packaging. It confirms the device uses matte tin plating and environmentally compliant molding compound-verified in the "Features" section and ordering information of the 2N5655/D datasheet. This designation applies exclusively to the 2N5657G and is not interchangeable with non-G variants.