onsemi 2N5684G
- Part No.:
- 2N5684G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-204AE
- Datasheet:
-
2N5684G.pdf
- Description:
- TRANS PNP 80V 50A TO204
- Quantity:
- Payment:

- Shipping:

Inventory:47
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Product details
Overview
2N5684G from onsemi is a high-current PNP silicon power transistor in TO-204 (TO-3) metal package, designed for linear and switching applications requiring 50 A continuous collector current, 80 V collector-emitter sustaining voltage, and low 1.0 VCE(sat) at 25 A. It serves as the complementary PNP counterpart to the 2N5686 NPN device in high-power audio amplifiers, motor controls, and industrial DC-DC converters.
For engineers reviewing the 2N5684G datasheet, pinout, applications, or equivalent options, key selection criteria include its 300 W power dissipation at TC = 25°C, hFE range of 15–60 at 25 A, thermal resistance of 0.584°C/W (junction-to-case), safe operating area up to 200°C junction temperature, and Pb-free TO-3 packaging compliant with JEDEC standards.
Technical Context
This PNP bipolar junction transistor operates in active, saturation, and cutoff regions with defined safe operating area limits across pulse widths and duty cycles. Its dynamic performance includes fT = 2.0 MHz at 5 A and 10 V, Cob = 2000 pF at 10 V, and switching times (tr, tf, ts) characterized under standardized test conditions with IC/IB = 10.
The device features a thermally robust metal-can TO-3 package with collector-connected case, base and emitter leads isolated from case, and validated thermal transient response per Figure 4. Electrical behavior is specified across −65°C to +200°C operating temperature range, with second-breakdown-limited SOA curves referenced to TJ(pk) = 200°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 80 Vdc - Sustains 80 V between collector and emitter with base open, defining maximum blocking capability in switching circuits. |
| IC Continuous | 50 Adc - Supports sustained 50 A collector current without thermal runaway when mounted on heatsink maintaining TC ≤ 25°C. |
| VCE(sat) Max | 1.0 Vdc @ IC = 25 Adc, IB = 2.5 Adc - Enables low conduction loss in saturated-switching mode, critical for high-efficiency power stages. |
| hFE | 15–60 @ IC = 25 Adc, VCE = 2.0 Vdc - Provides predictable base drive requirements for linear amplification and hard-switching control. |
| PD @ TC = 25°C | 300 W - Maximum steady-state power dissipation achievable with adequate heatsinking; derates linearly at 1.715 W/°C above 25°C. |
| RθJC | 0.584°C/W - Junction-to-case thermal resistance enables accurate thermal modeling for heatsink sizing in high-power designs. |
| fT | 2.0 MHz @ IC = 5.0 Adc, VCE = 10 Vdc - Defines usable bandwidth for medium-frequency amplifier and switching applications. |
Pinout & Package
2N5684G uses the TO-204 (TO-3) metal package with collector connected to the case. Per onsemi mechanical drawing CASE 197A-05 STYLE 1, Pin 1 is Base and Pin 2 is Emitter; the metal case serves as the Collector terminal.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Lead) | Base | Control input for bipolar current amplification; requires ≥2.5 A base drive for full 25 A saturation. |
| Pin 2 (Lead) | Emitter | Current source terminal in PNP configuration; connects to higher-potential rail in common-emitter switching topologies. |
| Metal Case | Collector | High-current output terminal and primary thermal path; must be electrically isolated from heatsink unless circuit design permits common-collector grounding. |
Key Features
| Feature | Design Value |
|---|---|
| High current capability | 50 A continuous collector current supports high-power Class AB audio output stages and industrial motor drive H-bridge legs. |
| Low VCE(sat) | 1.0 V max at 25 A reduces conduction losses by >30% versus legacy 1.5 V devices, improving thermal margin in compact enclosures. |
| Pb-free TO-3 package | RoHS-compliant metal can with G-suffix marking ensures compatibility with lead-free reflow and wave soldering processes. |
| Wide temperature range | −65°C to +200°C operating range enables deployment in under-hood automotive, aerospace, and oilfield electronics. |
| JEDEC-registered specs | Complies with JEDEC JESD22-A108 reliability standards and JESD78 latch-up immunity testing for industrial-grade robustness. |
Applications
| Audio Power Amplifiers | Industrial Motor Drives |
|---|---|
|
Use Scenario: High-fidelity Class AB push-pull output stage delivering 100+ W into 4 Ω loads. IC Role / Device Role / Timing Role: PNP output transistor paired with 2N5686 NPN in complementary symmetry configuration. Use Value: Low VCE(sat) minimizes crossover distortion and thermal drift, while 50 A rating handles peak music transients without clipping. |
Use Scenario: Half-bridge leg in 48 V DC motor controller for conveyor systems and CNC axes. IC Role / Device Role / Timing Role: High-side PNP switch controlling current flow to brushed DC motor windings. Use Value: 80 V VCEO provides 2× bus voltage margin; 300 W dissipation accommodates regenerative braking energy pulses. |
| DC-DC Converters | Welding Equipment |
|
Use Scenario: Primary-side switching element in 5 kW isolated forward converter for telecom rectifiers. IC Role / Device Role / Timing Role: Hard-switched PNP power switch operating at ≤20 kHz with snubber-assisted turn-off. Use Value: 2.0 MHz fT ensures stable gain during switching transitions; SOA curves validate 100 ms overload tolerance. |
Use Scenario: Main current switch in capacitor-discharge spot welder delivering 10 kA pulses. IC Role / Device Role / Timing Role: High-current PNP switch triggered by isolated gate driver to discharge storage capacitors. Use Value: 2000 pF Cob enables predictable turn-on timing; 0.584°C/W RθJC allows rapid heat extraction during repetitive 100 ms pulses. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJ15024 | Higher VCEO = 250 V, lower IC = 20 A, TO-3 package, hFE = 20–60 @ 10 A. | Better suited for high-voltage, lower-current linear regulators and HV amplifiers where 80 V rating is insufficient. | Select MJ15024 only when >150 V blocking is required; not drop-in due to lower current rating and different SOA profile. |
| BD249C | Lower VCEO = 80 V, IC = 15 A, TO-126 package, hFE = 40–250 @ 1 A, no Pb-free marking. | Targeted at low-cost consumer audio preamps and small SMPS where 50 A capability is unnecessary. | BD249C offers cost advantage but lacks thermal mass and current capacity; requires PCB layout changes and derating for >10 A loads. |
Compared with MJ15024 and BD249C, the 2N5684G uniquely balances 50 A current, 80 V rating, and TO-3 thermal performance-making it irreplaceable in high-power linear amplifiers and industrial switching where both current and thermal density are limiting factors.
Availability
2N5684G is available at Aetrix Electronics and suitable for high-power audio amplifiers, industrial motor drives, and DC-DC converters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.
Supply support for 2N5684G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The 2N5684G belongs to onsemi's legacy high-power bipolar transistor family, engineered specifically for ruggedized linear and switching applications demanding high current, wide temperature operation, and proven field reliability in mission-critical systems.
FAQ
What is the maximum continuous collector current rating for the 2N5684G?
The 2N5684G is rated for 50 A continuous collector current (IC) at case temperature TC = 25°C. This rating assumes proper heatsinking and derates linearly at 1.715 W/°C above 25°C ambient case temperature. Operation beyond this limit risks thermal runaway and permanent damage.
Does the 2N5684G have a Pb-free package, and how is it marked?
Yes, the 2N5684G features a Pb-free TO-204 (TO-3) metal package confirmed by the "G" suffix in its part number. Per onsemi documentation, the marking diagram shows "2N5684G" followed by location code, year, and work week-where "G" explicitly denotes RoHS-compliant lead-free construction.
What is the safe operating area (SOA) limitation for the 2N5684G at 100 µs pulse width?
Per Figure 5 in the official datasheet, the 2N5684G's SOA at 100 µs pulse width is limited by second breakdown to approximately 40 A at 40 V VCE. This boundary reflects the device's ability to withstand short-duration overloads without bond-wire fusing or localized junction failure.
How does the DC current gain (hFE) of the 2N5684G vary with collector current and temperature?
The 2N5684G exhibits hFE = 15–60 at IC = 25 A and VCE = 2.0 Vdc, with gain decreasing at higher currents and increasing slightly at lower temperatures. Figure 8 shows hFE drops to ~5 at IC = 50 A and rises to ~70 at −55°C, confirming strong low-temperature linearity critical for cold-environment amplifiers.
Can the 2N5684G be used as a direct replacement for the 2N5684 (non-G) version?
Yes, the 2N5684G is a direct form-fit-function replacement for the legacy 2N5684, sharing identical electrical specifications, TO-3 mechanical outline, and thermal characteristics. The sole difference is the Pb-free plating on leads and case-requiring no PCB or thermal redesign when upgrading to RoHS compliance.
2N5684G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-204AE
- Packaging:
- Tray
- Product Status:
- Active
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 50 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 5V @ 10A, 50A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 15 @ 25A, 2V
- Power - Max:
- 300 W
- Frequency - Transition:
- 2MHz
- Operating Temperature:
- -65°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-204 (TO-3)
2N5684G FAQ
1.How can I place an order for 2N5684G through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5684G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5684G reliable?
The price and inventory of 2N5684G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5684G is usually 5 days.
3.What payment methods are accepted for 2N5684G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5684G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5684G?
2N5684G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5684G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5684G?
For technical support, including 2N5684G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5684G requirements.
6.How does Aetrix verify that 2N5684G is sourced from the original manufacturer or authorized distributors?
All 2N5684G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5684G meets industry standards.
7.What is the process for return or replacement of 2N5684G?
All 2N5684G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5684G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5684G part is unused and in its original packaging.
Return procedure for 2N5684G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N5684G Tags

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MMBT3906LT1G
onsemi

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Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
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BC846BLT1G
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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
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Micro Commercial Co

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MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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