onsemi 2N5686G
- Part No.:
- 2N5686G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-204AE
- Datasheet:
-
2N5686G.pdf
- Description:
- TRANS NPN 80V 50A TO204
- Quantity:
- Payment:

- Shipping:

Inventory:4
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Product details
Overview
2N5686G from onsemi is an NPN silicon power transistor in TO-3 metal package, designed for high-current linear amplification and switching in industrial power supplies and motor control circuits. It delivers 50 A continuous collector current, supports 80 V collector-emitter voltage, exhibits VCE(sat) ≤ 1.0 V at 25 A, and provides DC current gain (hFE) of 15–60 at 25 A.
For engineers reviewing the 2N5686G datasheet, pinout, applications, or equivalent options, this page consolidates verified electrical ratings, thermal performance, safe operating area limits, saturation behavior, and complementary PNP pairing with 2N5684G - all critical for high-power discrete design validation and thermal layout planning.
Technical Context
This NPN bipolar junction transistor operates in the active and saturation regions with defined second-breakdown-limited safe operating area (SOA) up to 200 °C junction temperature. Its 0.584 °C/W junction-to-case thermal resistance enables direct mounting to heatsinks for sustained 300 W dissipation at TC = 25 °C.
The device features low base-emitter saturation voltage (VBE(sat) ≤ 2.0 V at IC/IB = 10), fast switching times (tr ≤ 20 ns), and output capacitance (Cob) of 1200 pF at 10 V - parameters validated under pulsed test conditions (300 μs width, 2% duty cycle).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 Vdc - Maximum collector-emitter voltage before breakdown; defines maximum supply rail compatibility in switching topologies. |
| IC Continuous | 50 Adc - Sustained collector current capability; enables use in high-power audio output stages and DC motor H-bridge legs. |
| VCE(sat) | ≤ 1.0 Vdc @ 25 Adc - Low saturation voltage minimizes conduction loss and heat generation during switch-on state. |
| hFE | 15–60 @ IC = 25 Adc - Moderate DC current gain range requiring robust base drive design for full-current switching. |
| PD @ TC = 25 °C | 300 W - Total power dissipation limit at case temperature; requires mechanical mounting to heatsink with thermal interface material. |
| RθJC | 0.584 °C/W - Junction-to-case thermal resistance; determines temperature rise per watt dissipated, critical for thermal margin calculation. |
| fT | 2.0 MHz - Current-gain bandwidth product; supports medium-frequency switching applications up to ~100 kHz with adequate gain margin. |
Pinout & Package
2N5686G uses the TO-204 (TO-3) metal can package with two leads and case-connected collector. The package is mechanically robust, electrically isolated via mounting hardware, and rated for operation from −65 °C to +200 °C junction temperature.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 | Base | Control terminal; requires ≥2.5 A base drive current to saturate at 25 A collector current (IC/IB = 10). |
| Lead 2 | Emitter | Current return path; connected to ground or low-side reference in common-emitter configurations. |
| Case | Collector | High-current output terminal; electrically connected to metal can; must be insulated from chassis unless used as heatsink ground reference. |
Key Features
| Feature | Design Value |
|---|---|
| High-current switching | Rated for 50 A continuous collector current - enables single-device implementation in 1–3 kW power stages without paralleling. |
| Pb-free construction | RoHS-compliant "G" suffix indicates lead-free plating and soldering compatibility per J-STD-609. |
| Thermal robustness | Junction temperature range −65 °C to +200 °C - supports operation in harsh environments including industrial motor drives and welding equipment. |
| Complementary pairing | Designed as NPN counterpart to 2N5684G (PNP); matched SOA, voltage rating, and thermal characteristics enable push-pull amplifier symmetry. |
| Second-breakdown immunity | SOA curves validated to 200 °C peak junction temperature - ensures reliability under transient overloads typical in inductive load switching. |
Applications
| Industrial DC Motor Drives | High-Power Audio Amplifiers |
|---|---|
|
Use Scenario: Driving brushed DC motors in CNC machinery and conveyor systems with PWM-controlled 40–60 VDC rails. IC Role / Device Role / Timing Role: NPN power switch in half-bridge output stage, handling bidirectional current up to 50 A during acceleration/deceleration. Use Value: Low VCE(sat) reduces conduction losses by >30% versus older 100 V/30 A transistors, improving thermal efficiency at full load. |
Use Scenario: Output stage in Class AB high-fidelity amplifiers delivering ≥100 W into 4 Ω loads. IC Role / Device Role / Timing Role: Linear-mode NPN emitter follower providing high-current sourcing capability with minimal distortion. Use Value: Stable hFE across 1–50 A range ensures consistent bias tracking and thermal stability during dynamic program material peaks. |
| Switch-Mode Power Supply (SMPS) Output Stage | Welding Equipment Primary Switching |
|
Use Scenario: High-current switching element in forward or push-pull DC-DC converters for telecom rectifiers (−48 V input, 3.3–12 V output). IC Role / Device Role / Timing Role: Main switch conducting high peak currents during transformer reset cycles; operated below 100 kHz. Use Value: 2.0 MHz fT and fast tr ≤ 20 ns support clean turn-on with minimal overlap loss when paired with appropriate gate/base driver. |
Use Scenario: Primary-side switching in resistance spot welders requiring repetitive 100–500 ms pulses at 50–100 A. IC Role / Device Role / Timing Role: High-duty-cycle NPN switch controlling energy delivery to welding transformer primary winding. Use Value: Validated SOA up to 200 °C and 300 W dissipation allows reliable operation without forced air cooling in compact enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-current power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJ15003G | Higher VCEO = 120 V, lower IC = 20 A, RθJC = 1.0 °C/W - less current capacity but higher voltage margin. | Better suited for 100 V bus applications where 50 A is not required; unsuitable for 50 A continuous use cases. | Select MJ15003G only when system voltage exceeds 80 V and peak current remains ≤20 A. |
| 2SC5200 | VCEO = 230 V, IC = 15 A, fT = 30 MHz - higher voltage and frequency capability but significantly lower current rating. | Used in high-voltage audio amplifiers and RF linear stages; lacks thermal mass and SOA for 50 A industrial switching. | Choose 2SC5200 for high-voltage, low-current linear applications; avoid for 50 A power switching due to inadequate SOA. |
Compared with MJ15003G and 2SC5200, the 2N5686G uniquely balances 50 A current, 80 V rating, and 300 W dissipation in a TO-3 package - making it irreplaceable for cost-sensitive, thermally constrained 1–3 kW industrial switching where both current and ruggedness are mandatory.
Availability
2N5686G is available at Aetrix Electronics and suitable for industrial motor drives, high-power audio amplifiers, welding equipment, and switch-mode power supplies requiring stable component supply and long-term manufacturing continuity.
Supply support for 2N5686G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and cloud power applications.
The 2N5686G belongs to onsemi's legacy high-current silicon power transistor family, engineered for ruggedized linear and switching operation in demanding industrial environments where thermal resilience and second-breakdown immunity are non-negotiable.
FAQ
What is the maximum continuous collector current rating for the 2N5686G?
The 2N5686G is rated for 50 A continuous collector current (IC) at case temperature TC = 25 °C. Derating applies above 25 °C at 1.715 W/°C, and actual usable current depends on heatsink performance and ambient conditions. This rating is validated per JEDEC standards and confirmed in the official onsemi datasheet Rev. 13.
Does the 2N5686G have a Pb-free package?
Yes, the "G" suffix in 2N5686G explicitly denotes a Pb-free (RoHS-compliant) package per onsemi's packaging standard. The device uses lead-free plating and meets J-STD-609 requirements for moisture sensitivity and solderability, with no lead content in terminations or internal construction.
What is the collector-emitter saturation voltage of the 2N5686G under full-load conditions?
The 2N5686G has a maximum VCE(sat) of 1.0 Vdc at IC = 25 Adc and IB = 2.5 Adc. At higher currents (e.g., 50 Adc), VCE(sat) rises to 5.0 Vdc - a value confirmed in the Electrical Characteristics table and critical for calculating conduction losses in high-power designs using the 2N5686G.
How is thermal management handled for the 2N5686G in high-power applications?
The 2N5686G relies on its metal TO-3 case as the primary thermal path, with a specified RθJC of 0.584 °C/W. Effective thermal management requires direct mounting to a heatsink using thermally conductive grease or pad, mechanical insulation if the case is not electrically referenced to ground, and attention to mounting torque to ensure uniform thermal contact - all essential for sustaining 300 W dissipation in the 2N5686G.
Is the 2N5686G pin-compatible with its PNP complement 2N5684G?
Yes, the 2N5686G (NPN) and 2N5684G (PNP) share identical TO-3 packaging, pinout configuration (Lead 1 = Base, Lead 2 = Emitter, Case = Collector), and mechanical dimensions. This symmetry enables direct complementary use in push-pull, Class AB, and H-bridge topologies without PCB redesign - a key design advantage confirmed in the onsemi datasheet marking diagram and ordering information.
2N5686G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-204AE
- Packaging:
- Tray
- Product Status:
- Active
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 50 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 5V @ 10A, 50A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 15 @ 25A, 2V
- Power - Max:
- 300 W
- Frequency - Transition:
- 2MHz
- Operating Temperature:
- -65°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-204 (TO-3)
2N5686G FAQ
1.How can I place an order for 2N5686G through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5686G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5686G reliable?
The price and inventory of 2N5686G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5686G is usually 5 days.
3.What payment methods are accepted for 2N5686G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5686G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5686G?
2N5686G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5686G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5686G?
For technical support, including 2N5686G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5686G requirements.
6.How does Aetrix verify that 2N5686G is sourced from the original manufacturer or authorized distributors?
All 2N5686G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5686G meets industry standards.
7.What is the process for return or replacement of 2N5686G?
All 2N5686G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5686G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5686G part is unused and in its original packaging.
Return procedure for 2N5686G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N5686G Tags

-
MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

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MMBT2222ALT1G
onsemi
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