onsemi 2N5769

Overview

2N5769 from Fairchild Semiconductor is an NPN bipolar junction transistor optimized for high-speed saturated switching at up to 100 mA collector current, with V_CEO = 15 V, V_CBO = 40 V, and turn-off time (t_off) of 18 ns. It uses Process 21 and is housed in a TO-92 package. It serves as a low-power digital switch in pulse logic and interface circuits.

For engineers reviewing the 2N5769 datasheet, pinout, applications, or equivalent options, key selection criteria include saturation voltage (V_CE(sat) = 0.2 V @ I_C = 10 mA), DC current gain (h_FE = 40–120), thermal resistance (R_θJA = 357 °C/W), and switching speed performance under defined bias conditions.

Technical Context

The 2N5769 operates as a discrete NPN BJT with fixed-emitter configuration and base-driven saturation switching behavior. Its electrical characteristics are specified at T_A = 25°C, with derating above that temperature, and it supports operation across –55°C to +150°C junction range.

It exhibits low storage time (t_s = 13 ns) and fast turn-on (t_on = 12 ns), enabled by optimized doping and geometry in Process 21. The device's V_BE(sat) ranges from 0.59 V to 1.6 V depending on current, temperature, and bias condition - critical for accurate drive-level design in TTL-compatible interfaces.

Key Specifications

Pinout & Package

2N5769 is packaged in TO-92 - a through-hole, epoxy-molded, three-lead plastic case with flat side orientation. Lead configuration follows standard JEDEC TO-92 outline: Emitter (lead 1), Base (lead 2), Collector (lead 3), with emitter-first wire-off orientation in tape-and-reel packaging.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching transistor applications.

Compared with PN2222A and 2N2222A, the 2N5769 delivers superior high-speed performance (t_off = 18 ns) at lower voltage ratings, making it uniquely suited for compact, fast-timing digital interfaces where thermal budget and layout space constrain alternatives.

Availability

2N5769 is available at Aetrix Electronics and suitable for digital logic interface, pulse width modulation driver, and low-power sensor interface applications requiring stable component supply, long-term obsolescence management, and traceable lot-controlled sourcing.

Supply support for 2N5769 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices, acquired by ON Semiconductor in 2016.

The 2N5769 belongs to Fairchild's legacy NPN switching transistor family designed specifically for high-speed saturated logic interfacing and low-power pulse applications in industrial and computing systems.

FAQ

What is the maximum operating temperature for the 2N5769?

The 2N5769 has a specified junction temperature range of –55°C to +150°C. Its absolute maximum storage temperature matches this range. Derating of power dissipation begins above 25°C ambient, with thermal resistance R_θJA = 357 °C/W. At 70°C ambient, the 2N5769 must be limited to ~200 mW to maintain TJ ≤ 150°C. This makes the 2N5769 suitable for extended industrial environments but not for uncooled high-power applications.

Is the 2N5769 pin-compatible with the PN2222A?

No, the 2N5769 is not pin-compatible with the PN2222A. While both use TO-92 packages, the 2N5769 follows emitter-base-collector (E-B-C) lead order, whereas the PN2222A uses emitter-collector-base (E-C-B). Swapping them without board revision risks incorrect biasing and device failure. Always verify pinout using the official Fairchild 2N5769 datasheet and compare against the target alternative's mechanical drawing before substitution.

What is the typical V_BE(sat) of the 2N5769 at 100 mA collector current?

At I_C = 100 mA and I_B = 10 mA, the 2N5769 exhibits V_BE(sat) = 1.15 V at 25°C and up to 1.6 V at elevated temperatures. This value reflects the forward-biased base-emitter junction under heavy overdrive, and must be accounted for when designing base drive circuits - especially in 3.3 V systems where insufficient headroom may prevent full saturation. The 2N5769 datasheet specifies this parameter explicitly in the ON CHARACTERISTICS table.

Does the 2N5769 support pulsed operation beyond its DC ratings?

Yes, the 2N5769 supports pulsed operation beyond its DC ratings, but only under strict conditions: pulse width ≤ 300 µs and duty cycle ≤ 2.0%, as defined in the Switching Characteristics section. Under these conditions, peak collector current may exceed 200 mA briefly. However, Fairchild advises consulting factory application engineering for non-standard pulse profiles, since thermal accumulation and second breakdown limits are not characterized outside those test conditions for the 2N5769.

Where can I find the official 2N5769 datasheet and packaging drawings?

The official 2N5769 datasheet and TO-92 packaging drawings were published by Fairchild Semiconductor and remain archived on ON Semiconductor's product support portal under document number "2N5769-D". Mechanical dimensions, tape-and-reel specifications (EOL codes D26Z, D74Z), and reeling configurations (Figure 2.0 and 3.0) are included in the "TO-92 Tape and Reel Data" revision B1 document. Aetrix Electronics provides direct links to these validated resources upon request for the 2N5769.