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onsemi 2N5771_D75Z

Part No.:
2N5771_D75Z
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
Aetrix2N5771_D75Z.pdf
Description:
TRANS PNP 15V 0.2A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,709

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Product details

Overview

2N5771_D75Z from Fairchild Semiconductor is a PNP bipolar junction transistor designed for very high-speed saturated switching at collector currents up to 100 mA, with VCEO = 15 V, IC = 200 mA continuous, and toff = 20 ns. It is used in compact digital logic interface and pulse generation circuits where fast turn-off and low saturation voltage are critical.

For engineers reviewing the 2N5771_D75Z datasheet, pinout, applications, or equivalent options, this device serves as a TO-92 packaged, leaded, radial ammo-packaged (D75Z) discrete switching transistor requiring attention to emitter-collector polarity, thermal derating above 25°C, and negative-polarity biasing conventions for PNP operation.

Technical Context

The 2N5771_D75Z operates as a saturated-switching PNP BJT with confirmed DC current gain (hFE) of 35–120 across 1–50 mA IC, VCE(sat) ≤ 0.6 V at IC = 50 mA/IB = 5 mA, and VBE(sat) ≤ 0.95 V under same conditions. Its small-signal hfe = 8.5 MHz at 10 mA/10 V confirms suitability for moderate-frequency switching-not RF amplification.

Thermal performance is defined by RθJA = 556°C/W on FR-4 PCB (1.6" × 1.6" × 0.06"), with maximum junction temperature of +150°C and derating of 1.8 mW/°C above 25°C. All voltage and current ratings carry negative polarity per PNP convention, including VCEO, VCBO, and IC.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO15 V - Maximum reverse-biased collector-emitter voltage before breakdown; defines safe operating range in common-emitter switch configurations.
IC (continuous)200 mA - Absolute max DC collector current; usable switching current limited to 100 mA per design intent and thermal constraints.
VCE(sat)0.6 V @ IC=50 mA/IB=5 mA - Low saturation voltage enables minimal power loss and heat generation during ON-state operation.
toff20 ns - Confirmed turn-off time under specified test conditions (IC=10 mA, VCC=1.5 V); critical for high-frequency digital timing control.
hFE35–120 - DC current gain range across operating points; supports reliable base drive design for predictable saturation at varying loads.
RθJA556 °C/W - Junction-to-ambient thermal resistance on standard FR-4 board; determines required heatsinking or layout spacing for sustained 200 mA operation.

Pinout & Package

2N5771_D75Z is supplied in the TO-92 through-hole package with straight leads, no lead clip, and radial ammo packaging (EOL code D75Z). Pin identification follows standard TO-92 orientation: flat side facing viewer, leads down, left-to-right = Emitter–Base–Collector (E-B-C).

Pin/TerminalCircuit RoleDesign Meaning
Emitter (E)Current source terminal for PNP operationConnected to higher potential (e.g., VCC); must be biased positive relative to base and collector for conduction.
Base (B)Control input for minority-carrier injectionReceives negative-going drive signal (relative to emitter) to initiate saturation; requires current-limited bias network.
Collector (C)Current sink terminalConnected to load and ground reference; carries switched current with VCE(sat) ≤ 0.6 V when fully ON.

Key Features

FeatureDesign Value
Very high-speed switchingConfirmed toff = 20 ns and ton = 15 ns enable use in >10 MHz digital clock distribution and pulse shaping.
Saturated switching optimizationLow VCE(sat) (0.15–0.6 V) and high hFE ensure deep saturation with minimal base drive, reducing driver-stage complexity.
Robust thermal ratingJunction temperature range of –55°C to +150°C supports industrial and automotive under-hood environments with proper PCB thermal management.
TO-92 radial ammo packaging (D75Z)2,000 units per ammo box; flat-of-transistor-on-top orientation; adhesive tape on top side; first wire off is collector-enables automated placement compatibility.

Applications

Digital Logic Level ShiftingPulse Width Modulation (PWM) Driver

Use Scenario: Converting TTL/CMOS logic outputs to drive higher-voltage loads (e.g., 12 V relays or LEDs) in microcontroller-based systems.

IC Role / Device Role / Timing Role: PNP switch configured in common-emitter mode, sinking current from load to ground while referenced to positive rail.

Use Value: Fast toff = 20 ns ensures clean PWM edge transitions up to ~25 MHz repetition rates without duty-cycle distortion.

Use Scenario: Driving gate resistors of N-channel MOSFETs in DC-DC converter feedback loops where low-side switching is impractical.

IC Role / Device Role / Timing Role: High-speed saturated switch providing active-pull-up capability for gate voltage restoration between cycles.

Use Value: VCE(sat) ≤ 0.6 V minimizes voltage drop across the switch, preserving gate drive amplitude and improving MOSFET turn-on speed.

Industrial Sensor InterfaceLegacy TTL Bus Termination

Use Scenario: Isolating and buffering analog sensor outputs (e.g., thermistor bridges) into digital acquisition systems using open-collector compatible inputs.

IC Role / Device Role / Timing Role: Active pull-up element in wired-OR configuration, enabling multiple sensors to share a single interrupt line.

Use Value: Confirmed ICBO ≤ 10 nA and V(BR)CEO = 15 V ensure leakage-induced false triggering is suppressed even at elevated ambient temperatures.

Use Scenario: Providing controlled termination current for legacy TTL bus lines operating at –0.4 V to +5 V swing, especially in backplane or rack-mounted instrumentation.

IC Role / Device Role / Timing Role: Current-source switch pulling bus lines toward VCC during idle states to maintain noise margin and prevent floating inputs.

Use Value: hFE ≥ 35 at IC = 1 mA guarantees stable biasing with minimal base resistor tolerance sensitivity, supporting long-term reliability in field-deployed equipment.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP switching transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MMBT5771SOT-23 surface-mount package; identical electrical specs (VCEO, hFE, toff); lower RθJA = 357°C/W on FR-4.Requires reflow-compatible PCB layout; unsuitable for through-hole prototyping or manual repair.Select MMBT5771 for space-constrained, high-volume SMT designs where thermal performance and automation are prioritized.
2N3906Higher VCEO = 40 V; slower toff = 225 ns; lower hFE min = 100 at IC = 10 mA; TO-92 package.Better voltage headroom but inadequate for >1 MHz switching; not recommended for timing-critical PWM or logic interfacing.Select 2N3906 only when higher breakdown voltage is mandatory and switching speed is secondary-e.g., simple LED drivers or power-on reset circuits.

Compared with MMBT5771 and 2N3906, the 2N5771_D75Z uniquely balances TO-92 through-hole manufacturability, 20 ns switching speed, and 15 V VCEO rating-making it optimal for cost-sensitive, medium-frequency industrial control boards requiring hand-solderable components and verified pulse fidelity.

Availability

2N5771_D75Z is available at Aetrix Electronics and suitable for industrial sensor interfaces, digital logic level shifting, and PWM driver circuits requiring stable component supply, consistent TO-92 mechanical form factor, and traceable D75Z ammo packaging.

Supply support for 2N5771_D75Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016; its legacy products remain widely deployed in industrial and automotive systems.

The 2N5771_D75Z belongs to Fairchild's general-purpose PNP switching transistor family, engineered specifically for high-speed saturated operation in digital interface and pulse-generation applications-not linear amplification or high-voltage switching.

FAQ

What is the pin configuration of the 2N5771_D75Z?

The 2N5771_D75Z uses the standard TO-92 package with flat side facing the viewer and leads pointing downward: left-to-right pin order is Emitter–Base–Collector (E-B-C). This matches the D75Z ammo packaging specification where the flat of the transistor is oriented on top and the first wire off is the collector.

Is the 2N5771_D75Z suitable for linear amplifier applications?

No-the 2N5771_D75Z is explicitly characterized and optimized for saturated switching, not linear operation. Its datasheet omits small-signal parameters like fT and provides no AC gain or distortion data; hfe = 8.5 MHz at 10 mA/10 V reflects modest bandwidth, insufficient for audio or RF amplification. Use only in switching roles.

What does the 'D75Z' suffix indicate for the 2N5771_D75Z?

The 'D75Z' suffix identifies the packaging variant: radial ammo packaging (not tape-and-reel), with 2,000 units per box, flat-of-transistor-on-top orientation, adhesive tape on the top side, and collector as the first wire off. It is distinct from D26Z (reel) or D74Z (ammo with flat-on-bottom).

Can the 2N5771_D75Z replace the PN4258 in existing designs?

No-the datasheet states "See PN4258 for characteristics," indicating PN4258 is a separate process variant with different parameters. The 2N5771_D75Z has confirmed VCEO = 15 V and toff = 20 ns; PN4258 specifications are not provided in this document and must be verified independently before substitution.

What is the maximum allowable power dissipation for the 2N5771_D75Z at 75°C ambient?

At 75°C ambient, the 2N5771_D75Z must be derated from its 225 mW maximum at 25°C by 1.8 mW/°C, resulting in PD = 225 mW − (1.8 mW/°C × 50°C) = 135 mW. Exceeding this risks junction temperature exceeding +150°C, potentially causing parametric shift or failure.

2N5771_D75Z Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
200 mA
Voltage - Collector Emitter Breakdown (Max):
15 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 5mA, 50mA
Current - Collector Cutoff (Max):
10nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 300mV
Power - Max:
350 mW
Frequency - Transition:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

2N5771_D75Z FAQ

1.How can I place an order for 2N5771_D75Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5771_D75Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5771_D75Z reliable?

The price and inventory of 2N5771_D75Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5771_D75Z is usually 5 days.

3.What payment methods are accepted for 2N5771_D75Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5771_D75Z transactions.

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2N5771_D75Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5771_D75Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5771_D75Z?

For technical support, including 2N5771_D75Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5771_D75Z requirements.

6.How does Aetrix verify that 2N5771_D75Z is sourced from the original manufacturer or authorized distributors?

All 2N5771_D75Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5771_D75Z meets industry standards.

7.What is the process for return or replacement of 2N5771_D75Z?

All 2N5771_D75Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5771_D75Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5771_D75Z part is unused and in its original packaging.

Return procedure for 2N5771_D75Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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