onsemi 2N5830

Overview

2N5830 from Fairchild Semiconductor is an NPN general-purpose amplifier transistor designed for high-voltage amplification and gas discharge display driving, featuring V_CEO = 100 V, V_CBO = 120 V, I_C = 200 mA, h_FE = 60–500 (at I_C = 1–50 mA), and TO-92 package. It operates across –55°C to +150°C and supports stable switching and linear amplification in medium-power analog circuits.

For engineers reviewing the 2N5830 datasheet, pinout, applications, or equivalent options, key selection considerations include its high-voltage breakdown capability, DC current gain range at multiple bias points, saturation voltage performance, thermal resistance (R_θJA = 200°C/W), and TO-92 mechanical compatibility with legacy through-hole layouts.

Technical Context

The 2N5830 is fabricated using Fairchild's Process 16, a planar epitaxial NPN process optimized for high-voltage ruggedness and consistent h_FE distribution. Its design targets applications requiring reliable operation under sustained collector-emitter voltages up to 100 V with low leakage (I_CBO ≤ 50 nA at 25°C).

Small-signal parameters-including h_fe = 1.0–5.0 at 100 MHz, C_cb = 4.0 pF, and h_ie = 6.0 kΩ-support mid-frequency amplification up to ~100 MHz, while V_BE(sat) ≤ 1.0 V at I_C = 50 mA enables efficient switching in discrete driver stages.

Key Specifications

Pinout & Package

2N5830 is housed in a standard TO-92 plastic package with straight leads and no lead clip. Pin identification follows JEDEC TO-92 outline: viewed with flat side facing user and leads downward, left-to-right pin order is Emitter (E), Base (B), Collector (C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose amplifier applications.

Compared with 2N5551 and PN2222A, the 2N5830 uniquely balances 100 V breakdown, 200 mA current, and wide h_FE range in TO-92-making it the preferred choice for gas discharge displays and mixed-voltage interface circuits where neither extreme HV nor ultra-low-cost LV alternatives suffice.

Availability

2N5830 is available at Aetrix Electronics and suitable for gas discharge display driving, high-voltage linear amplification, and relay/LED interface applications requiring stable component supply and long-term industrial availability.

Supply support for 2N5830 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor manufacturer specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The 2N5830 belongs to Fairchild's legacy NPN general-purpose amplifier family, engineered for reliability in high-voltage analog and electro-mechanical interface applications including display systems and industrial controls.

FAQ

What is the maximum continuous collector current for the 2N5830?

The 2N5830 has a maximum continuous collector current (I_C) of 200 mA at T_A = 25°C. Derating is required above 25°C per the specified 5.0 mW/°C thermal coefficient. This rating supports stable operation in driver and amplifier roles without forced cooling under typical ambient conditions. The 2N5830 maintains this current capability while sustaining V_CEO = 100 V, distinguishing it from lower-voltage alternatives like the PN2222A.

Does the 2N5830 have a documented pinout configuration for TO-92?

Yes-the 2N5830 uses the standard TO-92 pinout: with the flat side facing the viewer and leads pointing downward, the left-to-right pin order is Emitter (E), Base (B), Collector (C). This configuration is confirmed in Fairchild's official TO-92 packaging documentation and matches JEDEC TO-92 outline drawings. The 2N5830 pinout is identical to that of the 2N5551 and PN2222A, enabling mechanical compatibility in existing PCB footprints.

Can the 2N5830 be used as a direct replacement for the 2N5551?

No-the 2N5830 is not a direct replacement for the 2N5551 due to lower V_CEO (100 V vs. 160 V) and different h_FE distribution. While both share TO-92 packaging and NPN topology, the 2N5551 offers higher voltage margin and tighter gain specification at low currents. Substituting 2N5830 for 2N5551 in >120 V applications risks premature breakdown. The 2N5830 remains optimal where 100 V rating suffices and cost or gain range is prioritized.

What is the thermal resistance junction-to-ambient (R_θJA) for the 2N5830?

The 2N5830 has a junction-to-ambient thermal resistance (R_θJA) of 200°C/W under standard free-air conditions. This value assumes no heatsink and standard PCB mounting per JEDEC JESD51-2. At 625 mW maximum dissipation, this yields a 125°C junction rise above ambient-requiring careful layout or derating above 25°C. The 2N5830's R_θJC = 83.3°C/W also permits optional case-mount heatsinking if needed for sustained high-power operation.

Is the 2N5830 suitable for high-frequency amplification?

The 2N5830 supports small-signal amplification up to approximately 100 MHz, with h_fe = 1.0–5.0 measured at f = 100 MHz, I_C = 10 mA, and V_CE = 10 V. Its 4.0 pF output capacitance (C_cb) and moderate f_T (inferred from h_fe bandwidth) limit use in VHF/UHF stages but suit IF amplifiers, audio preamps, and medium-speed switching. For >200 MHz designs, purpose-built RF transistors are recommended over the 2N5830.