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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5830_D26Z

Name: 2N5830_D26Z
Brand: onsemi
SKU: 2N5830_D26Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5830_D26Z

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Datasheet:: 2N5830_D26Z.pdf

Description:: TRANS NPN 100V 0.2A TO-92-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5830_D26Z from Fairchild Semiconductor is an NPN general-purpose amplifier transistor in TO-92 package, rated for 100 V V_CEO, 200 mA I_C, and 625 mW P_D, designed for high-voltage amplification and gas discharge display driving applications.

For engineers reviewing the 2N5830_D26Z datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO/V_CBO breakdown voltage margin, h_FE consistency across 1–50 mA I_C, thermal resistance (R_θJA = 200 °C/W), and TO-92 tape-and-reel packaging compliance (EOL code D26Z).

Technical Context

The 2N5830_D26Z operates as a silicon NPN bipolar junction transistor fabricated on Fairchild's Process 16, with verified DC current gain (h_FE) of 60–500 at V_CE = 5 V and I_C = 1–50 mA. Its high V_CBO = 120 V supports robust operation in high-voltage switching nodes.

Small-signal parameters include h_fe = 1.0–5.0 at f = 100 MHz (I_C = 10 mA), C_cb = 4.0 pF at V_CB = 10 V, and h_ie = 6.0 kΩ - confirming suitability for medium-frequency amplification where capacitive loading and input impedance stability matter.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	100 V - maximum safe collector-emitter voltage before breakdown under open-base conditions
I_C (continuous)	200 mA - continuous collector current limit defining linear/switching load capacity
P_D @ 25°C	625 mW - total power dissipation at ambient temperature, derating 5.0 mW/°C above 25°C
h_FE @ I_C = 10 mA	80–500 - DC current gain range enabling predictable base drive sizing in amplifier stages
R_θJA	200 °C/W - junction-to-ambient thermal resistance indicating heatsinking requirements for sustained operation
V_BE(sat) @ I_C = 10 mA	1.0 V - base-emitter saturation voltage determining minimum driver voltage headroom
C_cb	4.0 pF - output capacitance affecting high-frequency roll-off and stability in RF-coupled stages

Pinout & Package

2N5830_D26Z is supplied in TO-92 plastic package (standard radial lead configuration, straight leads, no lead clip), with pinout validated per Fairchild Figure 1.0: Emitter (pin 1), Base (pin 2), Collector (pin 3) - flat side facing viewer, leads down, emitter first wire off.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Emitter)	Current sink terminal	Reference node for biasing; connects to ground or low-impedance return path in common-emitter configurations
Pin 2 (Base)	Control input	Receives forward-biased current to modulate collector current; requires series resistor to limit I_B based on h_FE
Pin 3 (Collector)	Current source terminal	Delivers amplified output current; connected to load and supply rail in switching or active-load amplifier topologies

Key Features

Feature	Design Value
High V_CBO rating	120 V enables use in flyback snubbers and HV display drivers without external clamping
Wide h_FE range	60–500 at 25°C supports consistent gain across production lots and operating currents
Low C_cb	4.0 pF minimizes Miller effect in medium-frequency amplifiers up to ~100 MHz
TO-92 tape-and-reel packaging	EOL code D26Z confirms compatibility with automated SMT placement equipment using standard 2,000-unit reels

Applications

Gas Discharge Display Driver	High-Voltage Amplifier Stage
Use Scenario: Driving neon or Nixie tube segments requiring 90–100 V anode switching. IC Role / Device Role / Timing Role: NPN switch controlling current through display segment via common-cathode topology. Use Value: V_CEO = 100 V and V_CBO = 120 V ensure reliable turn-off under full display supply transients.	Use Scenario: Linear amplification in industrial sensor signal conditioning circuits with ±50 V rails. IC Role / Device Role / Timing Role: Single-ended Class-A amplifier stage for low-noise analog front-end buffering. Use Value: h_FE ≥ 80 at I_C = 10 mA ensures stable bias point with minimal base current variation.
Relay Driver Interface	Legacy Logic-Level Translator
Use Scenario: Interfacing microcontroller GPIO (3.3 V/5 V) to 24–48 V relay coils. IC Role / Device Role / Timing Role: Low-side switch sinking relay coil current with defined saturation voltage. Use Value: V_CE(sat) ≤ 0.2 V at I_C = 10 mA limits power loss and self-heating during extended duty cycles.	Use Scenario: Level-shifting TTL outputs to higher-voltage logic families (e.g., 12 V PMOS gate control). IC Role / Device Role / Timing Role: Inverting translator with gain-controlled output swing. Use Value: V_BE(on) = 0.8 V ensures clean turn-on from 3.3 V logic while maintaining noise margin.

Gas Discharge Display Driver

High-Voltage Amplifier Stage

Use Scenario: Driving neon or Nixie tube segments requiring 90–100 V anode switching.

IC Role / Device Role / Timing Role: NPN switch controlling current through display segment via common-cathode topology.

Use Value: V_CEO = 100 V and V_CBO = 120 V ensure reliable turn-off under full display supply transients.

Use Scenario: Linear amplification in industrial sensor signal conditioning circuits with ±50 V rails.

IC Role / Device Role / Timing Role: Single-ended Class-A amplifier stage for low-noise analog front-end buffering.

Use Value: h_FE ≥ 80 at I_C = 10 mA ensures stable bias point with minimal base current variation.

Relay Driver Interface

Legacy Logic-Level Translator

Use Scenario: Interfacing microcontroller GPIO (3.3 V/5 V) to 24–48 V relay coils.

IC Role / Device Role / Timing Role: Low-side switch sinking relay coil current with defined saturation voltage.

Use Value: V_CE(sat) ≤ 0.2 V at I_C = 10 mA limits power loss and self-heating during extended duty cycles.

Use Scenario: Level-shifting TTL outputs to higher-voltage logic families (e.g., 12 V PMOS gate control).

IC Role / Device Role / Timing Role: Inverting translator with gain-controlled output swing.

Use Value: V_BE(on) = 0.8 V ensures clean turn-on from 3.3 V logic while maintaining noise margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
2N5551	Same Process 16 fab; identical V_CEO/V_CBO/I_C ratings but h_FE min = 80 (vs. 60 for 2N5830_D26Z)	Better h_FE consistency preferred in precision bias networks	Select 2N5551 when tighter DC gain tolerance is required; otherwise 2N5830_D26Z offers cost-effective performance parity
MPSA42	Higher V_CEO = 300 V, lower h_FE = 40–250, same TO-92 package	Suitable for >150 V applications where 2N5830_D26Z would be overstressed	Choose MPSA42 only when system voltage exceeds 100 V; not a drop-in replacement due to gain and saturation differences

Compared with 2N5830_D26Z, the 2N5551 provides higher guaranteed h_FE for improved bias stability, while the MPSA42 trades gain for tripled breakdown voltage - making each alternative optimal only within distinct voltage/gain design constraints.

Availability

2N5830_D26Z is available at Aetrix Electronics and suitable for gas discharge display driving, high-voltage amplifier stages, and relay interface circuits requiring stable component supply and TO-92 tape-and-reel automation compatibility.

Supply support for 2N5830_D26Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The 2N5830_D26Z belongs to Fairchild's legacy 2N-series general-purpose transistor family, engineered for reliability in industrial and display applications where high-voltage tolerance and consistent DC gain are critical.

FAQ

What is the pinout configuration of the 2N5830_D26Z?

The 2N5830_D26Z uses standard TO-92 pinout: Pin 1 is Emitter, Pin 2 is Base, Pin 3 is Collector - with flat side facing the viewer and leads pointing downward. This matches Fairchild's Figure 1.0 and is confirmed for EOL code D26Z tape-and-reel packaging. The 2N5830_D26Z must be mounted with correct orientation to avoid circuit malfunction.

Does the 2N5830_D26Z support pulsed operation beyond its DC ratings?

Per Fairchild's Absolute Maximum Ratings note, the 2N5830_D26Z is rated for steady-state operation only. Pulsed or low-duty-cycle use requires factory consultation, as thermal limits (T_J ≤ 150 °C) and second breakdown behavior are not characterized in the public datasheet. The 2N5830_D26Z should not be assumed safe for unvalidated pulse conditions.

What is the thermal resistance of the 2N5830_D26Z in free-air conditions?

The 2N5830_D26Z has R_θJA = 200 °C/W under standard test conditions (TA = 25 °C, no heatsink). This value reflects junction-to-ambient conduction and convection in still air. For reliable operation above 100 mW dissipation, PCB copper area or forced airflow must be modeled using this parameter. The 2N5830_D26Z datasheet does not specify R_θJC for custom heatsinking.

How does the h_FE of the 2N5830_D26Z vary with collector current?

The 2N5830_D26Z exhibits h_FE = 60 at I_C = 1 mA, rising to 80 at I_C = 10 mA, and remaining at 80 up to I_C = 50 mA - indicating peak gain in the 10–50 mA range. This non-monotonic behavior means bias networks must be designed for worst-case h_FE at the intended operating point. The 2N5830_D26Z datasheet confirms this trend across TA = 25 °C.

Is the 2N5830_D26Z RoHS compliant and halogen-free?

The original Fairchild 2N5830_D26Z documentation does not declare RoHS or halogen-free status. As a pre-2006 product, it predates mandatory RoHS enforcement and lacks explicit compliance labeling. For new designs requiring regulatory compliance, engineers should verify material content with ON Semiconductor (Fairchild's successor) or select a qualified modern equivalent. The 2N5830_D26Z remains available as a legacy part without updated environmental certification.

2N5830_D26Z Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-226-3, TO-92-3 (TO-226AA) Formed Leads

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 200 mA

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 250mV @ 5mA, 50mA

Current - Collector Cutoff (Max):: 50nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 80 @ 10mA, 5V

Power - Max:: 625 mW

Frequency - Transition:: -

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-92-3

2N5830_D26Z FAQ

1.How can I place an order for 2N5830_D26Z through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5830_D26Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5830_D26Z reliable?

The price and inventory of 2N5830_D26Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5830_D26Z is usually 5 days.

3.What payment methods are accepted for 2N5830_D26Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5830_D26Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5830_D26Z?

2N5830_D26Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5830_D26Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5830_D26Z?

For technical support, including 2N5830_D26Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5830_D26Z requirements.

6.How does Aetrix verify that 2N5830_D26Z is sourced from the original manufacturer or authorized distributors?

All 2N5830_D26Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5830_D26Z meets industry standards.

7.What is the process for return or replacement of 2N5830_D26Z?

All 2N5830_D26Z units undergo pre-shipment inspection (PSI). If there is an issue with 2N5830_D26Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5830_D26Z part is unused and in its original packaging.

Return procedure for 2N5830_D26Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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