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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N5884G

Name: 2N5884G
Brand: onsemi
SKU: 2N5884G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N5884G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-204AA, TO-3

Datasheet:: 2N5884G.pdf

Description:: TRANS PNP 80V 25A TO204

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N5884G from onsemi is a PNP silicon high-power transistor designed for general-purpose power amplifier and switching applications in industrial and audio systems. It delivers 25 A continuous collector current, supports 80 V collector-emitter sustaining voltage (V_CEO(sus)), and exhibits low saturation voltage of 1.0 V at I_C = 15 A - enabling efficient high-current linear and switching operation in robust power stages.

For engineers reviewing the 2N5884G datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-204AA (TO-3) metal-can package, verified thermal resistance of 0.875 °C/W (junction-to-case), confirmed DC current gain (h_FE) ≥20 at 10 A, and documented switching times (t_r/t_s/t_f) under 1.0 µs at 10 A load.

Technical Context

The 2N5884G operates as a complementary PNP counterpart to the NPN 2N5886G, sharing identical TO-204AA packaging and thermal design. Its bipolar junction architecture supports both linear amplification (with h_FE = 20–100 across 3–25 A) and hard-switching duty, validated by pulse-tested parameters including f_T ≥ 4.0 MHz at I_C = 1.0 A and t_r/t_s/t_f ≤ 0.7/1.0/0.8 µs under specified 30 V, 10 A test conditions.

Thermal performance is defined by a maximum junction temperature of +200°C and a derated power dissipation curve starting at 200 W @ T_C = 25°C, falling linearly to zero at T_C = 229°C. Safe operating area (SOA) curves confirm second-breakdown immunity up to 500 µs pulses at V_CE ≤ 80 V and I_C ≤ 25 A, with bonding-wire and thermal limits clearly delineated in Figure 5.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO(sus)	80 Vdc - Maximum sustainable collector-emitter voltage before breakdown under specified test conditions (I_C = 200 mA, I_B = 0), defining upper voltage limit in switching and amplifier designs.
I_C (continuous)	25 Adc - Continuous collector current rating at T_C = 25°C, directly determining heatsink sizing and thermal management requirements.
V_CE(sat)	1.0 Vdc (max) at I_C = 15 A, I_B = 1.5 A - Low saturation voltage minimizes conduction loss and heat generation in saturated-switching applications.
h_FE	20 (min) at I_C = 10 A, V_CE = 4.0 V - Minimum DC current gain ensures predictable base drive requirements for reliable turn-on in power stage control circuits.
f_T	4.0 MHz (min) at I_C = 1.0 A, V_CE = 10 V - Current-gain bandwidth product sets usable frequency limit for small-signal amplification and high-speed switching transitions.
P_D @ T_C = 25°C	200 W - Total device power dissipation capability at case temperature 25°C, establishing baseline thermal envelope before derating begins.
R_θJC	0.875 °C/W - Junction-to-case thermal resistance enables precise calculation of junction temperature rise above heatsink temperature.

Pinout & Package

2N5884G uses the TO-204AA (TO-3) metal-can package with mounting hole and electrically isolated collector case. The device follows Style 1 pin configuration: Pin 1 = Base, Pin 2 = Emitter, Case = Collector.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Base	Control terminal for biasing; requires ~6.25 A base current to fully saturate at I_C = 25 A (I_C/I_B = 4).
Pin 2	Emitter	Current output terminal in common-base configuration; serves as reference node in emitter-follower and push-pull output stages.
Case	Collector	High-current power terminal; electrically connected to heatsink; must be insulated from chassis unless circuit topology permits direct grounding.

Key Features

Feature	Design Value
Low V_CE(sat)	1.0 V max at 15 A enables <15 W conduction loss per device in Class AB audio output stages or motor H-bridge legs.
High I_C rating	25 A continuous current supports high-power linear regulators, welding controls, and industrial DC-DC converter primary switches without paralleling.
Pb-free construction	G-suffix confirms RoHS-compliant lead finish and soldering compatibility per ON Semiconductor Soldering and Mounting Techniques Reference Manual.
Robust SOA	Second-breakdown-limited safe operating area extends to 500 µs pulses at full 80 V/25 A, supporting inductive load switching in solenoid drivers and relay interfaces.
Wide T_J range	–65°C to +200°C junction temperature rating allows deployment in harsh environments including engine compartments and industrial furnaces.

Applications

Audio Power Amplifiers	Industrial Motor Drives
Use Scenario: High-fidelity Class AB push-pull output stage delivering 100+ W into 4 Ω loads. IC Role / Device Role / Timing Role: PNP power switch in complementary pair with NPN 2N5886G; handles negative half-cycle current with matched thermal and gain characteristics. Use Value: Low V_CE(sat) reduces crossover distortion and improves efficiency; TO-3 package enables direct bolt-down to large heatsinks for stable thermal impedance.	Use Scenario: DC motor direction control in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: High-side PNP switch in H-bridge configuration, sinking current from motor windings during reverse-phase commutation. Use Value: 80 V V_CEO(sus) accommodates back-EMF spikes up to 60 V; 25 A rating supports >1 kW motor drives without external current sharing.
Welding Power Supplies	High-Current Linear Regulators
Use Scenario: Primary-side switching element in transformer-isolated constant-current arc welders. IC Role / Device Role / Timing Role: Hard-switched PNP transistor operating at 1–5 kHz PWM frequency, handling peak currents >20 A during arc initiation. Use Value: Verified 4.0 MHz f_T ensures adequate gain margin at switching frequencies; SOA curves validate reliability under repetitive short-circuit stress.	Use Scenario: Pass transistor in high-stability 30 V/15 A laboratory bench power supply. IC Role / Device Role / Timing Role: Series pass element regulating output voltage via feedback-controlled base bias; dissipates up to 180 W at worst-case dropout. Use Value: 0.875 °C/W R_θJC enables junction temperature control below 150°C with standard finned heatsink; wide T_J range ensures long-term stability.

Audio Power Amplifiers

Industrial Motor Drives

Use Scenario: High-fidelity Class AB push-pull output stage delivering 100+ W into 4 Ω loads.

IC Role / Device Role / Timing Role: PNP power switch in complementary pair with NPN 2N5886G; handles negative half-cycle current with matched thermal and gain characteristics.

Use Value: Low V_CE(sat) reduces crossover distortion and improves efficiency; TO-3 package enables direct bolt-down to large heatsinks for stable thermal impedance.

Use Scenario: DC motor direction control in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-side PNP switch in H-bridge configuration, sinking current from motor windings during reverse-phase commutation.

Use Value: 80 V V_CEO(sus) accommodates back-EMF spikes up to 60 V; 25 A rating supports >1 kW motor drives without external current sharing.

Welding Power Supplies

High-Current Linear Regulators

Use Scenario: Primary-side switching element in transformer-isolated constant-current arc welders.

IC Role / Device Role / Timing Role: Hard-switched PNP transistor operating at 1–5 kHz PWM frequency, handling peak currents >20 A during arc initiation.

Use Value: Verified 4.0 MHz f_T ensures adequate gain margin at switching frequencies; SOA curves validate reliability under repetitive short-circuit stress.

Use Scenario: Pass transistor in high-stability 30 V/15 A laboratory bench power supply.

IC Role / Device Role / Timing Role: Series pass element regulating output voltage via feedback-controlled base bias; dissipates up to 180 W at worst-case dropout.

Use Value: 0.875 °C/W R_θJC enables junction temperature control below 150°C with standard finned heatsink; wide T_J range ensures long-term stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJ15024G	Higher V_CEO = 120 V, lower I_C = 20 A, f_T = 3.0 MHz - optimized for higher-voltage, lower-current audio output stages.	Preferred in high-impedance tube amplifier output transformers where voltage swing exceeds 80 V but current demand is ≤15 A.	Select MJ15024G when V_CE transients exceed 80 V; verify SOA compliance at reduced I_C due to lower current rating.
2N6284	Same TO-3 package, V_CEO = 80 V, I_C = 25 A, but h_FE = 15 (min) at 10 A and V_CE(sat) = 1.5 V (max) - lower gain and higher saturation loss.	Suitable for cost-sensitive industrial switching where marginal efficiency loss is acceptable and base drive capability is constrained.	Choose 2N6284 only if base drive current budget is limited and thermal margin exists to absorb extra 0.5 V × I_C conduction loss.

Compared with MJ15024G and 2N6284, the 2N5884G offers superior current gain consistency at high I_C, lower saturation voltage for improved thermal efficiency, and tighter SOA margins for demanding repetitive switching - making it optimal for high-reliability audio and motor-control applications requiring balanced voltage/current capability.

Availability

2N5884G is available at Aetrix Electronics and suitable for audio power amplifiers, industrial motor drives, welding power supplies, and high-current linear regulators requiring stable component supply and long-term manufacturability.

Supply support for 2N5884G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N5884G belongs to onsemi's legacy high-power bipolar transistor family, engineered specifically for ruggedized linear amplification and switching in industrial power electronics where thermal robustness and SOA integrity are critical.

FAQ

What is the maximum junction temperature rating for the 2N5884G?

The 2N5884G has an operating junction temperature range of –65°C to +200°C, as specified in the Absolute Maximum Ratings table. This wide range supports deployment in extreme environments such as engine control units and industrial furnace controllers, provided thermal design maintains T_J within limits using the documented R_θJC = 0.875 °C/W and derating curve.

Does the 2N5884G have a Pb-free package?

Yes, the "G" suffix in 2N5884G explicitly denotes a Pb-free package compliant with RoHS Directive 2011/65/EU. The device uses lead-free terminations and meets onsemi's soldering and mounting specifications outlined in their Soldering and Mounting Techniques Reference Manual (SOLDERRM/D).

What is the safe operating area (SOA) limitation for the 2N5884G at 100 µs pulse width?

Per Figure 5 in the datasheet, the 2N5884G's SOA at 100 µs is bounded by second breakdown, allowing up to approximately 20 A at 80 V or 25 A at 60 V. These limits assume T_J(pk) ≤ 200°C and require verification against transient thermal response data in Figure 4 to ensure actual junction temperature remains within specification.

How does the DC current gain (h_FE) of the 2N5884G vary with collector current?

The 2N5884G exhibits h_FE = 35 (min) at I_C = 3 A, 20 (min) at I_C = 10 A, and 4.0 (min) at I_C = 25 A - confirming strong gain compression at high current. This behavior is illustrated in Figure 8 and must be accounted for in base drive design to avoid insufficient saturation at full load.

Can the 2N5884G be used in parallel configurations?

Yes, the 2N5884G can be paralleled for higher current capacity, but requires emitter-ballasting resistors (typically 0.1 Ω) to ensure current sharing due to h_FE variation and thermal runaway risk. Matching devices by V_BE(sat) and thermal mounting symmetry is essential - refer to onsemi Application Note AN-1042 for proven layout practices.

2N5884G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-204AA, TO-3

Packaging:: Tray

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 25 A

Voltage - Collector Emitter Breakdown (Max):: 80 V

Vce Saturation (Max) @ Ib, Ic:: 4V @ 6.25A, 25A

Current - Collector Cutoff (Max):: 2mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 10A, 4V

Power - Max:: 200 W

Frequency - Transition:: 4MHz

Operating Temperature:: -65°C ~ 200°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-204 (TO-3)

2N5884G FAQ

1.How can I place an order for 2N5884G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N5884G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N5884G reliable?

The price and inventory of 2N5884G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5884G is usually 5 days.

3.What payment methods are accepted for 2N5884G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5884G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N5884G?

2N5884G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N5884G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N5884G?

For technical support, including 2N5884G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5884G requirements.

6.How does Aetrix verify that 2N5884G is sourced from the original manufacturer or authorized distributors?

All 2N5884G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5884G meets industry standards.

7.What is the process for return or replacement of 2N5884G?

All 2N5884G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5884G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N5884G part is unused and in its original packaging.

Return procedure for 2N5884G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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