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onsemi 2N5885G
- Part No.:
- 2N5885G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-204AA, TO-3
- Datasheet:
-
2N5885G.pdf
- Description:
- TRANS NPN 60V 25A TO204
- Quantity:
- Payment:
- Shipping:
Inventory:3,410
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Product details
Overview
2N5885G from onsemi is an NPN silicon high-power transistor designed for general-purpose power amplifier and switching applications in industrial motor drives, DC-DC converters, and linear power supplies. It delivers 25 A continuous collector current, supports 60 V collector-emitter voltage, dissipates up to 200 W at TC = 25°C, features VCE(sat) ≤ 1.0 V at IC = 15 A, and operates across –65°C to +200°C junction temperature range.
For engineers reviewing the 2N5885G datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-204AA (TO-3) metal-can package, complementary pairing with 2N5886, high fT ≥ 4.0 MHz, low ICEX ≤ 1.0 mAdc at rated voltage, and suitability for high-current linear and switching topologies requiring robust thermal performance.
Technical Context
The 2N5885G operates as a discrete bipolar junction transistor (BJT) with base-controlled current amplification. Its design emphasizes high-current switching and analog power amplification, supported by a minimum hFE of 20 at IC = 10 Adc and a current-gain bandwidth product fT ≥ 4.0 MHz at IC = 1.0 Adc, VCE = 10 Vdc.
Thermal management is integral: it exhibits θJC = 0.875°C/W maximum and derates linearly above 25°C (1.15 W/°C), enabling stable operation under high-power pulse conditions validated up to 200°C junction temperature. Safe operating area (SOA) curves confirm second-breakdown-limited performance at 500 µs to 5 ms pulse widths.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 60 Vdc - Maximum collector-emitter voltage before breakdown under open-base conditions; defines upper rail limit in switch-mode designs. |
| IC (continuous) | 25 Adc - Sustained collector current capability; enables use in 20–30 A output stages without forced air cooling at TC ≤ 25°C. |
| PD @ TC = 25°C | 200 W - Total device dissipation limit; requires heatsink interface with thermal resistance ≤ 0.875°C/W to maintain TJ ≤ 200°C. |
| VCE(sat) max | 1.0 Vdc at IC = 15 Adc, IB = 1.5 Adc - Low saturation voltage minimizes conduction loss (≤15 W at 15 A), critical for efficiency in Class AB amplifiers. |
| fT min | 4.0 MHz at IC = 1.0 Adc, VCE = 10 Vdc - Bandwidth sufficient for audio-frequency amplification and medium-speed switching (e.g., <500 kHz PWM). |
| hFE min | 20 at IC = 10 Adc, VCE = 4.0 Vdc - Ensures reliable base drive sizing; supports IB ≥ 0.5 A for full 10 A output in linear mode. |
| ICEO max | 2.0 mAdc at VCE = 30 Vdc - Low leakage preserves bias stability in high-temperature amplifier bias networks. |
Pinout & Package
2N5885G uses the TO-204AA (TO-3) metal-can package with case acting as the collector terminal. The package features a hermetically sealed steel can, threaded mounting hole, and standardized mechanical outline per CASE 1-07 STYLE 1.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Base | Control electrode; requires ≥0.5 A drive current for full 10 A output; low VBE(on) = 1.5 Vdc simplifies driver stage design. |
| Pin 2 | Emitter | Current return path; electrically isolated from case; connects to ground or negative rail in common-emitter configurations. |
| Case | Collector | Main power terminal; must be electrically insulated from heatsink unless circuit topology permits direct connection; carries full load current. |
Key Features
| Feature | Design Value |
|---|---|
| Low VCE(sat) | ≤1.0 Vdc at IC = 15 Adc reduces conduction losses by >30% vs. legacy power transistors with VCE(sat) > 1.5 V, improving thermal margin in compact enclosures. |
| Pb-Free TO-204AA package | RoHS-compliant construction with G-suffix marking; eliminates lead-based solder compatibility concerns while maintaining identical thermal and mechanical specs. |
| High TJ rating | –65°C to +200°C operating range enables deployment in under-hood automotive power modules and industrial ovens where ambient exceeds 100°C. |
| Complementary pairing | Designed as NPN counterpart to PNP 2N5883/2N5884; allows matched push-pull amplifier stages with symmetrical gain and thermal tracking. |
| JEDEC-registered specs | All maximum ratings and electrical characteristics conform to JEDEC standards (Note 1), ensuring interoperability and qualification consistency across global supply chains. |
Applications
| Audio Power Amplifier | DC Motor Drive |
|---|---|
|
Use Scenario: High-fidelity Class AB audio output stage delivering 50–100 W into 4–8 Ω loads. IC Role / Device Role / Timing Role: NPN output transistor in complementary pair with 2N5883/2N5884; handles positive half-cycle current with minimal crossover distortion. Use Value: VCE(sat) ≤ 1.0 V and hFE ≥ 20 at 10 A ensure low THD (<0.5%) and stable quiescent current over temperature. |
Use Scenario: H-bridge arm in 24–48 V brushed DC motor controller for industrial automation. IC Role / Device Role / Timing Role: High-side or low-side switching element; commutates up to 25 A stall current with 500 µs turn-off time. Use Value: ts ≤ 1.0 µs and tf ≤ 0.8 µs enable clean PWM switching at 20 kHz, reducing audible noise and EMI in motor windings. |
| Linear Regulator Pass Element | Welding Power Supply |
|
Use Scenario: Series pass transistor in adjustable 0–30 V, 0–20 A bench power supply. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output via feedback loop; dissipates up to 150 W during worst-case dropout. Use Value: θJC = 0.875°C/W and TJ(max) = +200°C allow safe operation with passive heatsinking, eliminating need for fan-cooled designs. |
Use Scenario: Primary switching transistor in IGBT-gated arc-welding inverter operating at 10–20 kHz. IC Role / Device Role / Timing Role: Fast-switching NPN switch handling repetitive 50 A peak currents during short-circuit events. Use Value: SOA curve validated to 5 ms pulses at 200°C ensures reliability during weld initiation surges without secondary breakdown. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN high-power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJ15003G | Higher VCEO = 120 V, lower fT = 2.5 MHz, same TO-3 package and 200 W PD. | Better suited for 100 V bus systems (e.g., telecom rectifiers); less optimal for audio due to reduced bandwidth. | Select MJ15003G when higher voltage blocking is required and bandwidth >3 MHz is not critical. |
| 2N6284 | VCEO = 60 V, IC = 20 A (lower), fT = 3.5 MHz, TO-3 package, non-Pb-free. | Legacy part with tighter hFE spread but obsolete packaging; lacks RoHS compliance and modern thermal specs. | Choose 2N6284 only for legacy repair; 2N5885G offers superior saturation voltage and Pb-free compliance. |
Compared with MJ15003G and 2N6284, the 2N5885G provides the best balance of voltage rating, current capacity, switching speed, and regulatory compliance for new industrial power designs-especially where 60 V operation, 25 A delivery, and 4.0 MHz bandwidth are jointly required.
Availability
2N5885G is available at Aetrix Electronics and suitable for industrial motor drives, audio power amplifiers, and linear regulator designs requiring stable component supply, long-term manufacturability, and RoHS-compliant packaging.
Supply support for 2N5885G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.
The 2N5885G belongs to onsemi's legacy high-power discrete transistor family, engineered for ruggedized linear and switching applications demanding high current, wide temperature operation, and JEDEC-standard reliability.
FAQ
What is the maximum safe operating junction temperature for the 2N5885G?
The 2N5885G has a specified operating junction temperature range of –65°C to +200°C. Its absolute maximum TJ is +200°C, validated across all electrical parameters in the datasheet. Operation beyond this limit risks permanent degradation of hFE and increased leakage; thermal design must ensure TJ remains ≤200°C under worst-case power dissipation and ambient conditions.
Is the 2N5885G pin-compatible with the 2N5886G?
No, the 2N5885G and 2N5886G are not pin-compatible. Both use TO-204AA (TO-3) packaging with identical pinout (Style 1: Pin 1 = Base, Pin 2 = Emitter, Case = Collector), but they differ in voltage rating: 2N5885G is rated for VCEO = 60 Vdc, while 2N5886G supports VCEO = 80 Vdc. They are complementary NPN devices-not drop-in replacements.
Does the 2N5885G require a heatsink in all applications?
Yes, the 2N5885G requires a heatsink in any application where power dissipation exceeds ~5 W. With θJC = 0.875°C/W and TJ(max) = +200°C, even at TC = 25°C, sustained operation above 200 W demands near-ideal thermal interface. For 25 A DC operation, a heatsink with θSA ≤ 1.5°C/W is mandatory to hold TJ ≤ 150°C under typical ambient conditions.
What is the typical base-emitter on voltage for the 2N5885G at 10 A collector current?
The 2N5885G exhibits VBE(on) = 1.5 Vdc at IC = 10 Adc and VCE = 4.0 Vdc, per the datasheet's ON CHARACTERISTICS table. This value is critical for calculating base drive requirements: for hFE(min) = 20, IB ≥ 0.5 A is needed, resulting in ~0.75 W dissipated in the base resistor network.
Can the 2N5885G be used in parallel configurations for higher current?
Yes, the 2N5885G supports parallel operation with proper design: emitter ballasting resistors (0.05–0.1 Ω) are required to equalize current sharing, and matched hFE devices should be selected. Derating total current by 15% per additional device is recommended to manage thermal runaway risk, especially above 100°C case temperature.
2N5885G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-204AA, TO-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 25 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 4V @ 6.25A, 25A
- Current - Collector Cutoff (Max):
- 2mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 10A, 4V
- Power - Max:
- 200 W
- Frequency - Transition:
- 4MHz
- Operating Temperature:
- -65°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-204 (TO-3)
2N5885G FAQ
1.How can I place an order for 2N5885G through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N5885G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N5885G reliable?
The price and inventory of 2N5885G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N5885G is usually 5 days.
3.What payment methods are accepted for 2N5885G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N5885G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N5885G?
2N5885G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N5885G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N5885G?
For technical support, including 2N5885G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N5885G requirements.
6.How does Aetrix verify that 2N5885G is sourced from the original manufacturer or authorized distributors?
All 2N5885G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N5885G meets industry standards.
7.What is the process for return or replacement of 2N5885G?
All 2N5885G units undergo pre-shipment inspection (PSI). If there is an issue with 2N5885G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N5885G part is unused and in its original packaging.
Return procedure for 2N5885G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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