onsemi 2N5886G

Overview

2N5886G from onsemi is an NPN silicon high-power transistor designed for general-purpose power amplifier and switching applications in industrial and audio systems. It delivers 25 A continuous collector current, supports 80 V collector-emitter voltage (V_CEO), and dissipates up to 200 W at T_C = 25°C with a thermal resistance of 0.875°C/W junction-to-case - enabling robust operation in high-current linear and switching stages.

For engineers reviewing the 2N5886G datasheet, pinout, applications, or equivalent options, key selection considerations include its verified 1.0 V_CE(sat) at 15 A, minimum h_FE of 20 at 10 A, 4.0 MHz f_T, 500 pF output capacitance, and TO-204AA (TO-3) metal package with base-emitter-collector terminal assignment.

Technical Context

This NPN bipolar junction transistor operates in linear amplification and hard-switching modes, featuring low saturation voltage and high DC current gain across wide current ranges. Its safe operating area (SOA) is defined by thermal limitation at low V_CE and second breakdown at high V_CE/low I_C, with pulse-rated switching times of t_r ≤ 0.7 µs, t_s ≤ 1.0 µs, and t_f ≤ 0.8 µs under 10 A/30 V conditions.

The device uses a planar epitaxial structure with gold-doped base region for improved minority-carrier lifetime control. Its complementary PNP counterpart is 2N5884G; both share identical TO-204AA packaging, thermal performance, and JEDEC-registered maximum ratings - supporting balanced push-pull amplifier designs requiring matched gain and switching behavior.

Key Specifications

Pinout & Package

2N5886G is housed in a TO-204AA (TO-3) metal can package with case acting as the collector terminal. The package provides low thermal resistance (0.875°C/W) and mechanical robustness for high-power mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-power transistor applications.

Compared with 2N5886G, MJ15003G trades lower conduction efficiency for higher voltage headroom, while 2SC5200 offers superior small-signal gain but less consistent thermal performance documentation - making 2N5886G the most balanced choice for certified industrial and commercial power electronics requiring JEDEC-aligned specifications and Pb-free compliance.

Availability

2N5886G is available at Aetrix Electronics and suitable for industrial motor drives, audio power amplifiers, and switch-mode power supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for 2N5886G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and consumer markets.

The 2N5886G belongs to onsemi's legacy high-power bipolar transistor family, engineered for ruggedized linear and switching applications where reliability, thermal stability, and JEDEC-standardized performance are critical - particularly in audio, power conversion, and industrial control.

FAQ

What is the maximum junction temperature rating for the 2N5886G?

The 2N5886G has an operating junction temperature range of –65°C to +200°C. This wide specification allows deployment in extreme environments such as engine bay electronics or high-temperature industrial enclosures. Thermal design must ensure that actual T_J remains below 200°C under worst-case power dissipation and ambient conditions, using the published R_θJC = 0.875°C/W value and appropriate heatsink modeling.

Is the 2N5886G pin-compatible with the 2N5885G?

Yes, the 2N5886G and 2N5885G share identical TO-204AA (TO-3) packaging, pinout (base/emitter/case-collector), and mechanical footprint. Both are NPN transistors with the same terminal assignments and mounting interface. However, their electrical characteristics differ: 2N5886G is rated for 80 V V_CEO and 2N5885G for 60 V, so direct substitution requires verification of voltage stress margins in the target circuit.

Does the 2N5886G require a minimum base drive current to achieve full conduction?

Yes - to achieve rated 25 A collector current with low V_CE(sat), the 2N5886G requires a base drive current of at least 6.25 A (I_B = I_C/4) under DC conditions. At 15 A, the datasheet specifies I_B = 1.5 A (h_FE ≥ 10). Base drive circuitry must deliver this current with sufficient voltage headroom (V_BE(sat) = 2.5 V max at 25 A) and thermal management for the driver stage.

Can the 2N5886G be used in parallel configurations?

Yes, the 2N5886G supports paralleling for higher current capacity, but requires emitter ballasting resistors (typically 0.1 Ω) to ensure current sharing. Its positive temperature coefficient of V_CE(sat) aids thermal stability during parallel operation. Layout symmetry, matched base drive impedance, and individual thermal coupling to the heatsink are essential to prevent current hogging and localized overheating in multi-device arrangements.

What is the safe operating area (SOA) limitation for the 2N5886G at 25°C case temperature?

At T_C = 25°C, the 2N5886G's SOA is limited by thermal dissipation up to 200 W at low V_CE, transitioning to second-breakdown constraints above ~40 V. For example, it supports 10 A at 50 V (500 W instantaneous) only in pulsed mode (≤500 µs, ≤2% duty cycle). Continuous operation above 20 V requires derating per the published SOA curves in Figure 5 of the datasheet to avoid bond-wire failure or thermal runaway.