onsemi 2N6034

Overview

2N6034 from onsemi is a PNP Darlington silicon power transistor in TO-225 package, rated for 40 V_CEO, 4.0 A continuous collector current, and 40 W total device dissipation at T_C = 25°C. It delivers high DC current gain (h_FE ≥ 500 at I_C = 0.5 A), low saturation voltage (V_CE(sat) ≤ 2.0 V at I_C = 2.0 A / I_B = 8.0 mA), and is designed for general-purpose linear amplification and low-speed switching in industrial control and power supply circuits.

For engineers reviewing the 2N6034 datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, Darlington configuration requiring base drive optimization, thermal resistance (R_JC = 3.12°C/W), safe operating area limits at 150°C junction temperature, and Pb-free TO-225 packaging with ESD robustness (HBM > 8 kV).

Technical Context

The 2N6034 operates as a monolithic PNP Darlington pair, integrating two cascaded transistors to achieve high current gain while maintaining single-package simplicity. Its design targets applications where moderate voltage (40 V), medium current (4 A), and thermally constrained mounting (e.g., heatsink-limited industrial enclosures) are primary constraints.

Electrical behavior is defined by strict SOA boundaries-bonding wire limited at high current/low voltage, thermally limited above 1 ms pulses, and second-breakdown constrained under transient conditions. The device exhibits V_BE(sat) ≤ 4.0 V at I_C = 4.0 A / I_B = 40 mA and C_ob = 200 pF at V_CB = 10 V, supporting predictable turn-off timing in relay drivers and lamp controls.

Key Specifications

Pinout & Package

2N6034 is housed in a TO-225 plastic package (Case 77-09, Style 1) with three leads and an electrically isolated metal tab (pins 2 and 4 both connected to collector). The package meets UL 94 V-0 flammability rating and is Pb-free/RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Compared with MJ15001 and BD679, the 2N6034 offers optimal balance of 40 V rating, 4 A current, Darlington integration, and TO-225 thermal performance for industrial control applications - neither over-specified nor thermally compromised.

Availability

2N6034 is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor direction control, linear power supply pass elements, and incandescent lamp dimmers requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for 2N6034 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N6034 belongs to onsemi's legacy plastic Darlington complementary power transistor family, engineered for ruggedized, cost-effective linear amplification and low-speed switching in industrial control, power conversion, and electromechanical actuation systems.

FAQ

What is the maximum continuous collector current rating for the 2N6034?

The 2N6034 is rated for 4.0 Adc continuous collector current at case temperature T_C = 25°C. Operation at higher ambient or case temperatures requires derating per the 320 mW/°C specification. At T_C = 100°C, maximum allowable continuous current drops to approximately 1.6 A to maintain safe junction temperature within the –65°C to +150°C range. Always verify thermal design using R_JC = 3.12°C/W and actual heatsink performance.

Is the 2N6034 a Darlington transistor, and how does that affect base drive requirements?

Yes, the 2N6034 is a monolithic PNP Darlington transistor consisting of two cascaded PNP transistors. This configuration provides high DC current gain (h_FE ≥ 500 at I_C = 0.5 A), meaning only ~2 mA of base current is needed to saturate the device at 1 A collector current. However, V_BE(sat) reaches up to 4.0 V at I_C = 4.0 A, so base drive circuits must supply sufficient voltage and current to overcome both V_BE drops and ensure full saturation of the Darlington pair.

What package type does the 2N6034 use, and is the metal tab electrically isolated?

The 2N6034 uses the TO-225 plastic package (Case 77-09, Style 1), with Pin 1 = Emitter, Pins 2 & 4 = Collector (common), and Pin 3 = Base. The metal tab is electrically connected to the collector - it is not isolated. This requires insulating hardware (e.g., shoulder washers or silicone pads) when mounting to a grounded heatsink to prevent short circuits. The package is UL 94 V-0 rated and Pb-free/RoHS compliant.

Can the 2N6034 be used in switching applications above 10 kHz?

No, the 2N6034 is optimized for low-speed switching (typically < 1 kHz) and linear operation. Its Darlington structure introduces inherent storage time delays, and datasheet switching time plots show t_r/t_f ≤ 10 ns only under specific test conditions (I_C/I_B = 250, V_CC = 30 V); real-world turn-off is significantly slower due to minority carrier storage. For >10 kHz PWM, devices like the MJD127 (NPN) or complementary MOSFETs are more appropriate. The 2N6034 should be used in relay drivers, lamp dimmers, or linear regulators - not high-frequency SMPS.

How does the Safe Operating Area (SOA) of the 2N6034 constrain its use in pulsed applications?

The 2N6034 SOA curve (Figure 4 in the datasheet) defines absolute limits for simultaneous V_CE and I_C under pulsed conditions. At DC, it is limited by thermal dissipation (40 W). At 1 ms, second breakdown becomes dominant - for example, it cannot sustain 4 A at 30 V (120 W) even briefly. For a 10% duty cycle 100 µs pulse, peak current must stay below ~12 A at 10 V to avoid exceeding SOA boundaries. Engineers must reference the published SOA graph and apply derating for case temperature and pulse duration - exceeding SOA risks immediate parametric shift or catastrophic failure.