Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N6034G

Part No.:
2N6034G
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
Aetrix2N6034G.pdf
Description:
TRANS PNP DARL 40V 4A TO-126
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,709

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N6034G from onsemi is a PNP Darlington silicon power transistor in TO-225 package, rated for 40 VCEO, 4.0 A continuous collector current, and 40 W total device dissipation at TC = 25°C. It delivers high DC current gain (hFE ≥ 500 at IC = 0.5 A), low saturation voltage (VCE(sat) ≤ 2.0 V at IC = 2.0 A, IB = 8.0 mA), and supports general-purpose amplifier and low-speed switching in industrial control power stages.

For engineers reviewing the 2N6034G datasheet, pinout, applications, or equivalent options, this page provides verified electrical specifications, thermal performance data, TO-225 terminal mapping, complementary PNP/NPN pairing context, and validated alternative transistors for legacy power linear and relay-driving circuits.

Technical Context

The 2N6034G implements a monolithic Darlington pair structure with integrated base-emitter shunt resistor network to ensure stable turn-off and ESD robustness (Human Body Model > 8000 V). Its safe operating area (SOA) is thermally limited up to 150°C junction temperature and second-breakdown constrained under pulsed conditions - validated per Figures 4–5 in the official datasheet.

Electrical behavior is characterized at TC = 25°C with defined test conditions: VCE(sat) measured at IC/IB = 250, hFE tested across IC = 0.5–4.0 A with VCE = 3.0 V, and Cob = 200 pF at VCB = 10 V, f = 0.1 MHz - all confirmed for the 2N6034G variant specifically.

Key Specifications

Parameter Value and Actual Design Meaning
VCEO 40 Vdc - Maximum collector-emitter sustaining voltage before breakdown under specified test condition (IC = 100 mA, IB = 0).
IC (continuous) 4.0 Adc - Continuous collector current capability at TC = 25°C; derates linearly above 25°C at 320 mW/°C.
PD (TC = 25°C) 40 W - Total device dissipation limit at case temperature of 25°C; defines maximum steady-state power handling before thermal shutdown.
hFE (min) 500 - Minimum DC current gain at IC = 0.5 A, VCE = 3.0 V; enables low-base-drive switching in high-current loads.
VCE(sat) ≤2.0 V - Collector-emitter saturation voltage at IC = 2.0 A, IB = 8.0 mA; determines conduction loss and heat generation in saturated switch mode.
RJC 3.12 °C/W - Junction-to-case thermal resistance; critical for heatsink sizing when mounting to metal chassis or extruded aluminum.
Cob 200 pF - Output capacitance at VCB = 10 V, f = 0.1 MHz; impacts switching speed and high-frequency stability in amplifier designs.

Pinout & Package

2N6034G uses the TO-225 (Case 77-09, Style 1) plastic package with three leads and an electrically isolated backside tab. Pin 1 is Emitter, Pins 2 and 4 are internally connected Collectors, and Pin 3 is Base - confirmed by official marking diagram and mechanical outline.

Pin/Terminal Circuit Role Design Meaning
Pin 1 Emitter Main emitter terminal; connects to load return path or ground reference in common-emitter configurations.
Pins 2 & 4 Collector Internally bonded collector terminals; both must be connected to supply rail or heatsink for optimal thermal and current handling.
Pin 3 Base Control input; requires current-limited drive (max IB = 100 mA) to achieve full saturation without overdrive stress.

Key Features

Feature Design Value
Pb-Free & RoHS compliant Meets EU Directive 2011/65/EU; no lead content in die attach, bond wires, or mold compound - suitable for green manufacturing.
ESD robustness Human Body Model > 8000 V and Machine Model > 400 V - reduces risk of field failure during handling and PCB assembly.
UL 94 V-0 epoxy Epoxy encapsulant certified to UL 94 V-0 flammability rating at 0.125 inch thickness - meets safety standards for industrial enclosures.
Darlington architecture Two-stage NPN-PNP cascade delivering hFE ≥ 500 - allows microcontroller GPIO-level base drive for 4 A loads without external driver stage.
Thermal performance RJC = 3.12 °C/W - enables direct mounting to heatsinks with minimal thermal interface resistance for sustained 40 W operation.

Applications

Industrial Relay Drivers DC Motor Start/Stop Control

Use Scenario: Driving 24 VDC industrial relays with coil currents up to 3.5 A in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: High-gain PNP Darlington switch providing inverted logic-level control and low-saturation conduction path.

Use Value: Eliminates need for discrete base-resistor networks and secondary driver transistors, reducing BOM count and PCB footprint.

Use Scenario: Controlling bidirectional brushed DC motors in HVAC damper actuators using H-bridge half-bridge topology.

IC Role / Device Role / Timing Role: Complementary PNP switch paired with NPN 2N6038G to form high-side leg of motor drive circuit.

Use Value: Enables 4 A peak motor stall current handling with <2.0 V saturation drop, minimizing power loss and thermal rise during start-up.

Linear Power Supply Pass Elements High-Voltage Lamp Dimmers

Use Scenario: Series pass transistor in 36 V, 3 A adjustable linear power supplies for test equipment calibration benches.

IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with fixed VBE bias network.

Use Value: Delivers stable regulation with hFE ≥ 500 across temperature, reducing base drive error and improving load regulation accuracy.

Use Scenario: Phase-angle dimmer output stage driving 40 W incandescent lamps in commercial lighting control panels.

IC Role / Device Role / Timing Role: Low-speed switching element triggered by zero-crossing triac driver ICs for AC mains synchronization.

Use Value: Withstands 40 V repetitive peak off-state voltage and handles 4 A RMS lamp inrush current without second-breakdown failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Alternative Part Technical Difference Application Difference Selection Advice
MJD2955G Higher VCEO = 60 V, same IC = 4.0 A, but lower hFE min = 20 at IC = 3.0 A; TO-252 package with exposed drain pad. Preferred where higher off-state voltage margin is required; unsuitable for space-constrained through-hole layouts due to SMT-only footprint. Select MJD2955G when upgrading legacy 2N6034G designs to withstand 60 V transient surges without layout change to heatsink interface.
BD139 Lower VCEO = 80 V, IC = 1.5 A, hFE = 40–250; TO-126 package; not Pb-free; no ESD rating specified. Used in cost-sensitive consumer audio amplifiers; lacks industrial-grade ESD protection and thermal derating data for continuous 40 W operation. Choose BD139 only for non-critical, low-volume prototypes where RoHS compliance and 4 A current capability are not mandatory.

Compared with MJD2955G and BD139, the 2N6034G offers superior DC current gain for low-base-drive applications, verified Pb-free compliance, and documented SOA curves for reliable 40 W thermal management - making it the preferred choice for industrial relay drivers and linear regulator pass elements requiring long-term reliability.

Availability

2N6034G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor control circuits, and linear power supply pass elements requiring stable component supply, long lifecycle support, and RoHS-compliant sourcing.

Supply support for 2N6034G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N6034G belongs to onsemi's legacy plastic Darlington complementary power transistor family, designed specifically for robust, low-speed switching and linear amplification in industrial control, power conversion, and electromechanical actuation systems.

FAQ

What is the maximum continuous collector current rating for the 2N6034G?

The 2N6034G is rated for 4.0 Adc continuous collector current at case temperature TC = 25°C. This rating decreases linearly at 320 mW/°C above 25°C, meaning usable current drops to approximately 2.5 A at TC = 75°C. The 2N6034G datasheet specifies this limit under defined thermal mounting conditions with adequate heatsinking.

Is the 2N6034G pin-compatible with other transistors in the 2N603x series?

No - the 2N6034G is a PNP device, while 2N6038G and 2N6039G are NPN. Though all share the TO-225 package and identical pinout (Emitter–Collector–Base on Pins 1–2/4–3), polarity reversal means they cannot be substituted without circuit redesign. The 2N6034G pairs functionally with 2N6038G as complementary switches, not as pin-for-pin replacements.

Does the 2N6034G require a base resistor when driven by a microcontroller GPIO?

Yes - the 2N6034G requires an external base current limiting resistor to prevent excessive IB. With typical VBE(on) ≈ 2.8 V and max IB = 100 mA, a 3.3 V GPIO needs ≥50 Ω, and a 5 V GPIO needs ≥220 Ω to keep IB within safe limits. The 2N6034G does not integrate internal base resistors, unlike some digital transistors.

What is the thermal resistance junction-to-case (RJC) for the 2N6034G?

The 2N6034G has a maximum RJC of 3.12 °C/W, measured from junction to the metal tab surface. This value assumes proper mechanical mounting with thermal interface material and sufficient heatsink mass. It directly determines how much temperature rise occurs per watt dissipated - e.g., 40 W operation yields ~125°C junction-to-case delta under ideal conditions.

Can the 2N6034G be used in switching power supplies?

The 2N6034G is not recommended for high-frequency switching power supplies due to its relatively slow switching times (tr, tf ≤ 10 ns only under specific test conditions) and Darlington-related storage time limitations. It is optimized for low-speed switching (<1 kHz) and linear operation. For SMPS, consider modern MOSFETs or dedicated PWM controllers instead of the 2N6034G.

2N6034G Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP - Darlington
Current - Collector (Ic) (Max):
4 A
Voltage - Collector Emitter Breakdown (Max):
40 V
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Current - Collector Cutoff (Max):
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 2A, 3V
Power - Max:
40 W
Frequency - Transition:
-
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126

2N6034G FAQ

1.How can I place an order for 2N6034G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6034G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6034G reliable?

The price and inventory of 2N6034G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6034G is usually 5 days.

3.What payment methods are accepted for 2N6034G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6034G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6034G?

2N6034G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6034G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6034G?

For technical support, including 2N6034G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6034G requirements.

6.How does Aetrix verify that 2N6034G is sourced from the original manufacturer or authorized distributors?

All 2N6034G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6034G meets industry standards.

7.What is the process for return or replacement of 2N6034G?

All 2N6034G units undergo pre-shipment inspection (PSI). If there is an issue with 2N6034G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6034G part is unused and in its original packaging.

Return procedure for 2N6034G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N6034G Tags

  • 2N6034G
  • 2N6034G PDF
  • 2N6034G Datasheet
  • 2N6034G Specifications
  • 2N6034G Images
  • onsemi
  • onsemi 2N6034G
  • Buy 2N6034G
  • 2N6034G Price
  • 2N6034G Distributor
  • 2N6034G Supplier
  • 2N6034G Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER