onsemi 2N6035G

Overview

2N6035G from onsemi is a PNP silicon Darlington power transistor in TO-225 package, rated for 60 V_CEO, 4.0 A continuous collector current, and 40 W total device dissipation at T_C = 25°C. It delivers high DC current gain (h_FE ≥ 750 at I_C = 2.0 A), low saturation voltage (V_CE(sat) ≤ 3.0 V), and operates across –65°C to +150°C junction temperature range - designed for low-speed switching and linear amplifier applications in industrial power control circuits.

For engineers reviewing the 2N6035G datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP Darlington architecture, 60 V blocking capability, thermal resistance of 3.12°C/W (junction-to-case), ESD robustness (>8 kV HBM), and Pb-free TO-225 packaging - all critical for reliable operation in relay drivers, motor controls, and DC power regulation.

Technical Context

The 2N6035G implements a monolithic PNP Darlington pair with integrated base-emitter shunt resistor network, enabling high current amplification while maintaining stable bias under varying load conditions. Its safe operating area (SOA) is defined by thermal limits (R_JC = 3.12°C/W), second breakdown constraints, and bonding wire current capacity - validated up to 1 ms pulse width at T_J = 150°C.

Electrical behavior is characterized at T_C = 25°C with specified test conditions: V_CE(sat) measured at I_C = 4.0 A / I_B = 40 mA; h_FE tested at I_C = 0.5–4.0 A / V_CE = 3.0 V; C_ob = 200 pF at V_CB = 10 V / f = 0.1 MHz. Off-state leakage (I_CEO ≤ 100 µA at V_CE = 60 V) ensures low standby power loss.

Key Specifications

Pinout & Package

2N6035G is housed in a TO-225 plastic package (Case 77-09, Style 1) with three leads and an electrically isolated backside tab (collector-connected). The package meets UL 94 V-0 flammability rating and is Pb-free/RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Compared with MJD6035G and 2N6036G, the 2N6035G provides the best combination of proven through-hole reliability, thermal interface flexibility via TO-225 tab mounting, and precise 60 V rating matching common industrial bus voltages - avoiding unnecessary derating or package conversion overhead.

Availability

2N6035G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor speed control, and linear power regulators requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for 2N6035G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N6035G belongs to onsemi's legacy plastic Darlington power transistor family, engineered for rugged, cost-effective linear and switching applications in harsh industrial environments where reliability and thermal stability are paramount.

FAQ

What is the maximum continuous collector current rating for the 2N6035G?

The 2N6035G is rated for 4.0 A continuous collector current (I_C) at case temperature T_C = 25°C. Derating is required above this temperature - 320 mW/°C - and actual usable current depends on heatsinking efficiency and ambient conditions. At T_C = 100°C, the practical I_C limit drops to approximately 1.6 A based on the specified derating curve.

Does the 2N6035G have a built-in base-emitter resistor?

No, the 2N6035G does not include an integrated base-emitter shunt resistor. It is a standard two-terminal base-controlled Darlington transistor requiring external base current limiting. Unlike digital transistors (e.g., MMDT series), the 2N6035G relies on discrete base drive circuitry for proper biasing and switching control.

Can the 2N6035G be used as a direct replacement for the 2N6034G?

No, the 2N6035G is not a direct replacement for the 2N6034G due to differing voltage ratings: the 2N6034G has V_CEO = 40 V, while the 2N6035G is rated for 60 V. Substituting the 2N6035G into a 40 V design is electrically safe but may incur unnecessary cost and size penalty; substituting the 2N6034G into a 60 V circuit risks premature breakdown and failure.

What is the thermal resistance junction-to-ambient (R_JA) for the 2N6035G in standard TO-225 mounting?

The 2N6035G has a specified R_JA of 83.3°C/W under standard JEDEC test conditions (single-layer PCB, 1 in² copper pad). This value assumes minimal copper area and no heatsink; actual R_JA improves significantly with larger copper pours or bolted heatsinks - for example, adding a 25 cm² aluminum heatsink can reduce effective R_JA to ~20°C/W.

Is the collector terminal of the 2N6035G electrically isolated from the package tab?

No, the collector terminal of the 2N6035G is internally connected to the metal tab on the backside of the TO-225 package (Pins 2 and 4 are collector leads). This tab must be electrically isolated from other circuit potentials unless the system design intentionally references the collector to chassis ground or heatsink potential - isolation is typically achieved using mica washers or silicone pads.