onsemi 2N6036

Overview

2N6036 from onsemi is a PNP silicon Darlington power transistor in TO-225 package, rated for 80 V_CEO, 4.0 A continuous collector current, and 40 W total device dissipation at T_C = 25°C. It delivers high DC current gain (h_FE ≥ 100 at I_C = 4.0 A), low saturation voltage (V_CE(sat) ≤ 3.0 V), and operates across –65°C to +150°C junction temperature range - used in industrial relay drivers and linear power supply pass elements.

For engineers reviewing the 2N6036 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP Darlington topology, 80 V blocking capability, thermal resistance of 3.12°C/W (junction-to-case), ESD robustness (>8 kV HBM), and Pb-free TO-225 packaging - all critical for high-reliability low-speed switching and analog amplification designs.

Technical Context

The 2N6036 implements a monolithic PNP Darlington pair with integrated base-emitter resistor network enabling high current gain (up to 15,000) and simplified drive requirements. Its safe operating area (SOA) is defined by second breakdown limits at 100 µs–5 ms pulses and thermal constraints up to 150°C junction temperature.

Electrical behavior is characterized at T_C = 25°C with validated parameters including V_CE(sat) ≤ 3.0 V at I_C = 4.0 A / I_B = 40 mA, V_BE(sat) ≤ 4.0 V under same conditions, and Cob = 200 pF at V_CB = 10 V - confirming suitability for medium-frequency switching and analog feedback loops.

Key Specifications

Pinout & Package

2N6036 is housed in a TO-225 axial-leaded plastic package (Case 77-09, Style 1) with electrically isolated collector tab (pins 2 and 4), base (pin 3), and emitter (pin 1). The package meets UL 94 V-0 flammability rating and is Pb-free/RoHS compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Compared with MJD6036G and BD679, the 2N6036 offers superior thermal performance (R_JC = 3.12°C/W), higher continuous current capacity (4.0 A vs. 2.0 A or 3.0 A), and guaranteed minimum h_FE at full load - making it optimal for thermally demanding, high-reliability industrial switching where leaded TO-225 mounting is acceptable.

Availability

2N6036 is available at Aetrix Electronics and suitable for industrial relay drivers, linear power supply pass elements, motor brake circuits, and high-side load switches requiring stable component supply and long-term manufacturability.

Supply support for 2N6036 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, computing, and consumer markets.

The 2N6036 belongs to onsemi's legacy plastic Darlington complementary power transistor family, engineered for robust low-speed switching and linear amplification in harsh industrial environments where reliability and thermal stability are prioritized over RF performance.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6036?

The 2N6036 has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 80 Vdc when I_C = 100 mAdc and I_B = 0. This rating is confirmed in the OFF CHARACTERISTICS table of the official onsemi datasheet (Rev. 15, December 2013) and defines the absolute upper limit for safe DC blocking in PNP switch configurations. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does the 2N6036 require an external base resistor for safe operation?

The 2N6036 does not integrate a base-emitter resistor; however, its Darlington structure inherently reduces required base drive current. With h_FE ≥ 100 at I_C = 4.0 A, a 40 mA base current suffices for full saturation. An external current-limiting resistor is still necessary when driven from voltage sources (e.g., MCU GPIO) to prevent exceeding the 100 mAdc maximum base current rating specified in the Absolute Maximum Ratings table.

Can the 2N6036 be used in linear regulator applications?

Yes, the 2N6036 is explicitly suited for linear regulator pass element use due to its 40 W dissipation capability at T_C = 25°C, low V_CE(sat) (≤3.0 V), and stable h_FE across temperature. Its SOA curve in Figure 4 confirms safe operation at DC and low-frequency conditions typical of series-pass regulators - provided adequate heatsinking maintains T_J ≤ 150°C and V_CE remains within the thermally limited region.

What is the thermal resistance from junction to case for the 2N6036?

The 2N6036 has a maximum thermal resistance of R_JC = 3.12°C/W, as specified in the THERMAL CHARACTERISTICS section of the onsemi datasheet. This value is measured under standardized mounting conditions (flat, clean, greased interface to heatsink) and enables accurate junction temperature estimation using T_J = T_C + (P_D × R_JC). It reflects the device's superior heat transfer capability relative to smaller-outline alternatives.

Is the 2N6036 RoHS compliant and lead-free?

Yes, the 2N6036G variant is explicitly designated as Pb-free and RoHS compliant per the ordering information and features list in the onsemi datasheet. The "G" suffix denotes compliance with EU RoHS Directive 2011/65/EU and related environmental standards. The epoxy molding compound also meets UL 94 V-0 flammability requirements at 0.125 inch thickness.