onsemi 2N6036G

Overview

2N6036G from onsemi is a PNP silicon Darlington power transistor in TO-225 package, rated for 80 V_CEO, 4.0 A continuous collector current, and 40 W total device dissipation at T_C = 25°C. It delivers high DC current gain (h_FE = 100–15,000), low saturation voltage (V_CE(sat) ≤ 3.0 V at I_C = 4.0 A), and is optimized for low-speed switching and linear amplifier applications in industrial power control circuits.

For engineers reviewing the 2N6036G datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, 80 V blocking capability, Darlington architecture enabling high input impedance and low base drive requirements, thermal resistance (R_θJC = 3.12°C/W), and Pb-free TO-225 packaging compliant with RoHS.

Technical Context

The 2N6036G implements a monolithic Darlington pair structure with integrated emitter-base shunt resistors to improve turn-off speed and stability. Its safe operating area (SOA) is defined by second breakdown limits up to 100 µs pulses and thermally limited operation at DC, with junction temperature range from –65°C to +150°C.

Electrical behavior is characterized by V_BE(sat) ≤ 4.0 V at I_C = 4.0 A / I_B = 40 mA, V_CE(sat) ≤ 3.0 V under same conditions, and output capacitance C_ob = 200 pF at V_CB = 10 V - parameters critical for snubber design and switching loss estimation in relay drivers and motor controls.

Key Specifications

Pinout & Package

2N6036G uses the TO-225 package (Case 77-09, Style 1) with three leads and an electrically isolated metal tab (pin 4 connected to collector). The package provides mechanical robustness and thermal path via the backside tab, suitable for bolt-down heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Compared with MJD6036G and BDX53C, the 2N6036G offers superior voltage margin (80 V), through-hole mechanical reliability, and lowest base drive demand among the three - making it optimal for rugged industrial controls where field serviceability and transient immunity are critical.

Availability

2N6036G is available at Aetrix Electronics and suitable for industrial relay drivers, linear power supply pass elements, and DC motor speed controllers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for 2N6036G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensor, and logic solutions for automotive, industrial, and cloud infrastructure markets.

The 2N6036G belongs to onsemi's legacy plastic Darlington complementary power transistor family, designed specifically for general-purpose amplifier and low-speed switching applications where high current gain, rugged packaging, and proven reliability are essential.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6036G?

The 2N6036G has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 80 Vdc at I_C = 100 mAdc and I_B = 0. This rating is confirmed in the "OFF CHARACTERISTICS" table of the official onsemi datasheet (Rev. 15, December 2013) and defines the absolute upper limit for safe DC blocking in high-side switch configurations. Exceeding this voltage risks avalanche breakdown and permanent device failure.

Does the 2N6036G require a heatsink in typical applications?

Yes, the 2N6036G requires a heatsink in any application dissipating more than ~5 W continuously. With R_θJC = 3.12°C/W and a maximum junction temperature of +150°C, even at ambient 25°C and 10 W dissipation, the case temperature would reach 56.2°C - necessitating thermal interface material and a finned aluminum heatsink. The datasheet's SOA curves explicitly assume proper heatsinking for DC and pulse operation above 1 A.

What is the base-emitter saturation voltage of the 2N6036G under full-load conditions?

The 2N6036G exhibits a base-emitter saturation voltage (V_BE(sat)) of ≤4.0 Vdc when operated at I_C = 4.0 Adc and I_B = 40 mAdc, as specified in the "ON CHARACTERISTICS" section of the onsemi datasheet. This elevated V_BE(sat) reflects its Darlington architecture and must be accounted for in base drive circuit design - e.g., a 5 V MCU GPIO cannot directly drive the base without level-shifting or buffering.

Is the 2N6036G pin-compatible with other devices in the 2N603x family?

No - while all 2N603xG devices share the TO-225 package and Style 1 pinout (Emitter=Pin1, Collector=Pins2&4, Base=Pin3), the 2N6036G is PNP whereas 2N6038G/2N6039G are NPN. Swapping them without circuit redesign will cause functional failure. Polarity, gain profile, and SOA boundaries differ significantly between PNP and NPN variants, so direct substitution is not supported.

What is the thermal resistance from junction to ambient (R_θJA) for the 2N6036G?

The 2N6036G has a thermal resistance from junction to ambient (R_θJA) of 83.3°C/W under standard test conditions (free-air, no heatsink), as published in the "THERMAL CHARACTERISTICS" table of the onsemi datasheet. This value assumes zero airflow and no PCB copper pour - real-world R_θJA improves significantly with heatsinking, mounting pressure, and thermal vias, but 83.3°C/W remains the worst-case baseline for derating calculations.