onsemi 2N6038G

Overview

2N6038G from onsemi is an NPN Darlington silicon power transistor in TO-225 package, rated for 60 V_CEO, 4.0 A continuous collector current, and 40 W total device dissipation at T_C = 25°C. It delivers high DC current gain (h_FE = 750 min at I_C = 2.0 A), low saturation voltage (V_CE(sat) ≤ 3.0 V at I_C = 4.0 A / I_B = 40 mA), and is designed for low-speed switching and linear amplifier applications in industrial control and power supply circuits.

For engineers reviewing the 2N6038G datasheet, pinout, applications, or equivalent options, key selection considerations include its Darlington configuration enabling high input impedance and low base drive requirements, its 60 V blocking capability, thermal resistance of 3.12°C/W (junction-to-case), and compatibility with standard TO-225 heatsink mounting in relay drivers and motor control stages.

Technical Context

The 2N6038G implements a monolithic Darlington pair structure with integrated emitter-base shunt resistors to improve turn-off speed and stability. Its safe operating area (SOA) is defined up to 150°C junction temperature, with second-breakdown-limited pulse operation validated for 5 ms at 10% duty cycle.

Electrical behavior is characterized across –65°C to +150°C junction temperature range, with specified V_BE(sat) ≤ 4.0 V and V_BE(on) ≤ 2.8 V at I_C = 4.0 A, and Cob = 100 pF at V_CB = 10 V - confirming suitability for moderate-frequency switching below 1 MHz.

Key Specifications

Pinout & Package

2N6038G uses the TO-225 (Case 77-09, Style 1) plastic package with three leads and backside collector tab. The package is Pb-free and RoHS compliant, with UL 94 V-0 epoxy molding compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington power transistor applications.

Compared with 2N6039G and MJ11015G, the 2N6038G offers optimal balance of 60 V blocking, 4 A current, and TO-225 mountability for cost-sensitive industrial controls - whereas 2N6039G trades higher voltage margin for identical thermal and drive characteristics, and MJ11015G serves entirely different high-power complementary roles.

Availability

2N6038G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor controllers, AC solid-state switches, and linear power supply pass elements requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for 2N6038G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6038G belongs to onsemi's legacy plastic Darlington power transistor family, engineered for rugged, low-speed switching and linear amplification in cost-sensitive industrial control and power conversion systems.

FAQ

What is the maximum continuous collector current rating for the 2N6038G?

The 2N6038G is rated for 4.0 Adc continuous collector current at case temperature T_C = 25°C. Derating is required above 25°C at 320 mW/°C, meaning usable current drops to approximately 2.5 A at T_C = 75°C. This rating assumes proper heatsinking to maintain junction temperature below 150°C, as confirmed in the Safe Operating Area curves of the official 2N6038G datasheet.

Is the 2N6038G pin-compatible with other transistors in the 2N603x series?

Yes, the 2N6038G shares the TO-225 (Case 77-09, Style 1) package and identical pinout - Pin 1 (Emitter), Pins 2 & 4 (Collector), Pin 3 (Base) - with 2N6034G, 2N6035G, 2N6036G, and 2N6039G. However, electrical ratings differ: 2N6038G and 2N6039G are NPN with 60 V and 80 V V_CEO, respectively, while the others are PNP. Direct substitution requires verifying polarity and voltage/current compatibility.

What is the typical DC current gain (h_FE) of the 2N6038G at 2.0 A collector current?

The 2N6038G specifies a minimum h_FE of 750 at I_C = 2.0 A and V_CE = 3.0 V, with typical values reaching 1500 under those conditions. This high gain enables low base drive requirements - for example, only ~2.7 mA base current is needed to sustain 2.0 A collector current - making the 2N6038G well-suited for direct interface with logic-level microcontrollers and optocouplers.

Does the 2N6038G have built-in protection features such as ESD or thermal shutdown?

The 2N6038G includes ESD protection rated to >8000 V per Human Body Model (HBM Class 3B) and >400 V per Machine Model (MM Class C), verified per JESD22-A114 and JESD22-A115 standards. It does not integrate thermal shutdown circuitry - thermal management relies on external heatsinking and PCB layout, with safe operation bounded by the SOA curves and maximum junction temperature of 150°C specified in the 2N6038G datasheet.

Can the 2N6038G be used in switching power supplies?

The 2N6038G is optimized for low-speed switching (typically <100 kHz) and linear operation, not high-frequency SMPS use. Its Cob = 100 pF and relatively slow switching times (t_r/t_f ≤ 10 ns only under specific test conditions) limit efficiency above ~500 kHz. For switching power supplies, the 2N6038G is appropriate only in auxiliary bias supplies or low-frequency gate drivers - not in main power stage converters where MOSFETs or faster BJTs are preferred.