My Inquiry
My Account
onsemi 2N6040G
- Part No.:
- 2N6040G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
2N6040G.pdf
- Description:
- TRANS PNP DARL 60V 8A TO-220
- Quantity:
- Payment:
- Shipping:
Inventory:9,421
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2N6040G from onsemi is a PNP silicon Darlington transistor in TO-220 package, designed for medium-power linear amplification and low-speed switching. It delivers 8 A continuous collector current, sustains 60 V collector-emitter voltage (VCEO(sus)), and achieves DC current gain (hFE) up to 20,000 at IC = 4.0 A - enabling high-current drive with minimal base drive in industrial relay drivers and power supply error amplifiers.
For engineers reviewing the 2N6040G datasheet, pinout, applications, or equivalent options, this page provides verified electrical specifications, thermal derating curves, safe operating area limits, saturation voltage behavior under load, and validated alternative transistors for complementary circuit design.
Technical Context
The 2N6040G is a monolithic PNP Darlington pair with built-in base-emitter shunt resistors, optimized for high DC gain and robust thermal performance. Its junction-to-case thermal resistance is 1.67 °C/W, supporting stable operation at 75 W total power dissipation when mounted on heatsinks with adequate thermal interface.
It operates across –65 °C to +150 °C junction temperature range and features ESD protection rated >8 kV (HBM Class 3B) and >400 V (MM Class C). The device meets UL 94 V-0 flammability standard at 0.125-inch thickness and is Pb-free/RoHS compliant.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 60 V min - supports reliable blocking in 48 V DC control systems and industrial power supplies without breakdown risk at rated current. |
| IC (continuous) | 8.0 A - enables direct driving of solenoids, contactors, and medium-power LED arrays without external current boosting. |
| hFE | 1000–20,000 - allows microcontroller GPIO-level base drive (e.g., 8 mA IB drives 8 A IC at hFE = 1000), reducing driver stage complexity. |
| VCE(sat) | 2.0 V max @ IC = 4.0 A, IB = 16 mA - limits conduction loss to ≤8 W at full load, critical for thermally constrained enclosures. |
| PD @ TC = 25°C | 75 W - defines maximum steady-state power handling with active heatsinking; derates linearly at 0.60 W/°C above 25°C case temperature. |
| RθJC | 1.67 °C/W - quantifies thermal path efficiency from junction to case; used to calculate required heatsink RθSA for target TJ. |
Pinout & Package
2N6040G uses the industry-standard TO-220 package (Case 221A, Style 1) with three leads: Collector (tab), Base (center), Emitter (right when tab faces outward). The metal tab is electrically connected to the collector and must be insulated from chassis unless collector is at ground potential.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (Tab) | Main current sink terminal | Electrically tied to metal mounting tab; requires insulating washer if mounted to grounded heatsink; dominates thermal path to heatsink. |
| Base | Control input | Receives low-current drive signal; internal shunt resistor aids turn-off; base-emitter voltage threshold ~2.8 V at IC = 4 A. |
| Emitter | Current source reference | Common return path for load current; voltage drop across emitter resistor sets feedback in amplifier configurations. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington construction | Integrates driver and output transistors on single die, eliminating interconnect parasitics and ensuring matched thermal tracking for stable gain. |
| Built-in base-emitter shunt resistor | Enables active turn-off without external pull-down; reduces storage time and improves switching consistency in PWM-controlled loads. |
| UL 94 V-0 epoxy encapsulation | Provides flame-retardant housing suitable for enclosed industrial equipment meeting IEC 62368-1 safety requirements. |
| High ESD immunity (HBM >8 kV) | Reduces handling damage risk during manual assembly and field service; eliminates need for additional ESD protection in board layout. |
Applications
| Industrial Relay Driver | Linear Power Supply Error Amplifier |
|---|---|
Use Scenario: Driving 24 VDC industrial relays with coil currents up to 7 A in PLC output modules. IC Role / Device Role / Timing Role: PNP Darlington switch providing high-current sinking capability with logic-level base control. Use Value: Eliminates need for discrete driver stages; 2.0 V VCE(sat) ensures <16.8 W dissipation at full load, compatible with standard TO-220 heatsinks. |
Use Scenario: Error amplification stage in adjustable linear bench power supplies delivering 0–30 V / 0–5 A. IC Role / Device Role / Timing Role: High-gain (hFE ≥1000) pass transistor control element regulating output voltage via series pass element. Use Value: Enables precise low-noise regulation with <1 mV output drift over temperature due to stable hFE and low VBE(on) variation. |
| Motor Brake Control | DC Load Switching in Energy Storage Systems |
Use Scenario: Dynamic braking of 48 V BLDC motor windings during emergency stop sequences. IC Role / Device Role / Timing Role: High-current PNP switch dissipating regenerated energy as heat during controlled deceleration. Use Value: SOA curve supports 60 V × 8 A operation for 100 ms pulses (duty cycle ≤10%), enabling safe transient energy absorption. |
Use Scenario: Isolating battery banks in solar microgrids using bidirectional DC switching with reverse polarity protection. IC Role / Device Role / Timing Role: Medium-speed (tr/tf ≤10 ns) load disconnect switch in 60 V nominal DC distribution panels. Use Value: Low VCE(sat) minimizes voltage drop during continuous operation; TO-220 package allows direct bolt-on heatsink integration for 24/7 duty cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD6039G | Same TO-220 package, lower VCEO(sus) = 40 V, hFE = 750–7500, RθJC = 2.0 °C/W | Limited to ≤36 V systems; higher thermal resistance requires larger heatsink for same power. | Select when cost sensitivity outweighs voltage margin and thermal performance is secondary. |
| BDW10 | TO-3P package, VCEO(sus) = 60 V, hFE = 250–2000, no integrated shunt resistor | Requires external base pull-down; higher mounting torque needed; not RoHS-compliant (Pb-containing). | Choose only for legacy designs requiring TO-3P mechanical compatibility or where RoHS exemption applies. |
Compared with MJD6039G and BDW10, the 2N6040G offers superior DC gain stability, integrated turn-off assistance, and certified RoHS compliance - making it optimal for new industrial control designs requiring long-term supply continuity and regulatory alignment.
Availability
2N6040G is available at Aetrix Electronics and suitable for industrial relay drivers, linear power supply error amplifiers, motor brake controllers, and DC load switching applications requiring stable component supply across extended production lifecycles.
Supply support for 2N6040G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The 2N6040G belongs to onsemi's legacy plastic medium-power complementary transistor family, engineered for general-purpose amplifier and low-speed switching roles where high DC gain, rugged thermal performance, and industrial reliability are prioritized over RF or high-frequency operation.
FAQ
What is the maximum continuous collector current rating for the 2N6040G?
The 2N6040G is rated for 8.0 A continuous collector current (IC) at case temperature TC = 25°C. This rating assumes proper heatsinking and derates linearly by 0.60 W/°C above 25°C. At TC = 100°C, the usable continuous current drops to approximately 4.5 A based on its 75 W power limit and thermal resistance.
Does the 2N6040G have an integrated base-emitter shunt resistor?
Yes, the 2N6040G features monolithic construction with a built-in base-emitter shunt resistor. This design accelerates turn-off by discharging stored base charge, reducing storage time and improving switching consistency in applications like PWM-driven solenoids or relay coils.
What is the collector-emitter sustaining voltage (VCEO(sus)) specification for the 2N6040G?
The 2N6040G has a minimum collector-emitter sustaining voltage VCEO(sus) of 60 Vdc at IC = 100 mAdc and IB = 0. This parameter defines the maximum voltage the device can block in the active region before entering uncontrolled conduction - critical for safe operation in 48 V industrial control rails.
Can the 2N6040G be used in surface-mount designs?
No, the 2N6040G is packaged exclusively in the through-hole TO-220 (Case 221A) format. It is not available in surface-mount variants such as DPAK or IPAK. Designers requiring SMT assembly must select alternatives like the NSS12601CF8T1G (SOT-223) or evaluate adapter boards for prototyping.
Is the 2N6040G RoHS compliant and lead-free?
Yes, the "G" suffix in 2N6040G explicitly denotes a Pb-free, RoHS-compliant package per onsemi's documentation. The device meets UL 94 V-0 flammability requirements and is qualified for reflow soldering per J-STD-020 moisture sensitivity level (MSL) 1, with unlimited floor life when stored properly.
2N6040G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 8 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 2V @ 16mA, 4A
- Current - Collector Cutoff (Max):
- 20µA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 4A, 4V
- Power - Max:
- 75 W
- Frequency - Transition:
- -
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
2N6040G FAQ
1.How can I place an order for 2N6040G through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6040G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6040G reliable?
The price and inventory of 2N6040G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6040G is usually 5 days.
3.What payment methods are accepted for 2N6040G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6040G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6040G?
2N6040G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6040G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6040G?
For technical support, including 2N6040G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6040G requirements.
6.How does Aetrix verify that 2N6040G is sourced from the original manufacturer or authorized distributors?
All 2N6040G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6040G meets industry standards.
7.What is the process for return or replacement of 2N6040G?
All 2N6040G units undergo pre-shipment inspection (PSI). If there is an issue with 2N6040G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6040G part is unused and in its original packaging.
Return procedure for 2N6040G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N6040G Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
