onsemi 2N6042G

Overview

2N6042G from onsemi is a PNP silicon Darlington power transistor in TO-220 package, rated for 100 V_CEO(sus), 8 A continuous collector current, and 75 W power dissipation at T_C = 25°C. It delivers high DC current gain (h_FE = 1000 min @ I_C = 3.0 A), low V_CE(sat) ≤ 2.0 V @ I_C = 3.0 A / I_B = 12 mA, and features monolithic construction with built-in base-emitter shunt resistors - used in industrial relay drivers and AC motor control stages.

For engineers reviewing the 2N6042G datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V sustaining voltage, thermal resistance θ_JC = 1.67°C/W, ESD robustness (HBM > 8 kV), Pb-free RoHS-compliant TO-220 packaging, and complementary pairing with 2N6045G for H-bridge output stages.

Technical Context

The 2N6042G implements a monolithic PNP Darlington structure with integrated base-emitter shunt resistor to reduce turn-off time and improve switching reliability. Its 100 V_CEO(sus) rating enables use in 80–100 V DC bus applications, while the 1.67°C/W junction-to-case thermal resistance supports heatsink-mounted operation up to 150°C junction temperature.

Electrical behavior is characterized by h_FE ≥ 1000 at I_C = 3.0 A and V_CE = 4.0 V, V_BE(sat) ≤ 4.5 V at I_C = 8.0 A / I_B = 80 mA, and Cob = 300 pF @ V_CB = 10 V - confirming suitability for low-speed switching (<100 kHz) and linear amplifier roles where gain stability across temperature is required.

Key Specifications

Pinout & Package

2N6042G uses the standard TO-220 package (Case 221A, Style 1), with lead assignment verified per onsemi marking diagram and mechanical drawings: emitter tab connected to pin 1, base to pin 2, collector to pin 3 (tab). The metal tab is electrically connected to the collector terminal and must be isolated from chassis ground unless circuit topology requires common-collector configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP Darlington power transistor applications.

Compared with MJD127G and TIP2955, the 2N6042G offers superior voltage margin, highest DC gain, integrated turn-off assist, and industry-leading ESD tolerance - making it optimal for ruggedized industrial controls where reliability and minimal external components are critical.

Availability

2N6042G is available at Aetrix Electronics and suitable for industrial relay drivers, AC motor start circuits, and DC power supply foldback protection requiring stable component supply and long-term manufacturability.

Supply support for 2N6042G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, signal processing, and sensing technologies for automotive, industrial, and cloud infrastructure markets.

The 2N6042G belongs to onsemi's legacy plastic medium-power complementary transistor family, engineered for general-purpose amplifier and low-speed switching applications where ruggedness, gain stability, and thermal performance are prioritized over RF or high-frequency operation.

FAQ

What is the maximum continuous collector current rating for the 2N6042G?

The 2N6042G is rated for 8.0 A continuous collector current at case temperature T_C = 25°C. Derating applies above this temperature at 0.60 W/°C, and actual usable current depends on heatsink efficiency and ambient conditions. At T_C = 100°C, the effective I_C limit drops to approximately 4.5 A based on thermal constraints.

Does the 2N6042G have a built-in base-emitter shunt resistor?

Yes, the 2N6042G features monolithic construction with a built-in base-emitter shunt resistor. This resistor accelerates turn-off by discharging stored base charge, reducing storage time and improving switching consistency - especially valuable in relay and solenoid driving applications where fast de-energization is required.

What is the collector-emitter saturation voltage of the 2N6042G under typical operating conditions?

The 2N6042G has V_CE(sat) ≤ 2.0 V at I_C = 3.0 A and I_B = 12 mA. At higher currents (e.g., I_C = 8.0 A), V_CE(sat) rises to ≤4.0 V. These values reflect worst-case conditions; typical units measure lower, but design margins should use the specified maxima.

Can the 2N6042G be used in complementary pairs with NPN devices?

Yes, the 2N6042G is explicitly designed as the PNP complement to the NPN 2N6045G. Both share identical TO-220 packaging, 100 V_CEO(sus) rating, and matched thermal characteristics - enabling balanced H-bridge, push-pull amplifier, and dual-rail switching topologies without layout asymmetry.

Is the 2N6042G RoHS-compliant and lead-free?

Yes, the "G" suffix in 2N6042G denotes a Pb-free, RoHS-compliant package. It meets UL 94 V-0 flammability rating at 0.125 in thickness and is qualified for lead-free reflow soldering per IPC-J-STD-020. Full compliance documentation is available in onsemi's Pb-Free Packaging Reference Manual.