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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N6045G

Name: 2N6045G
Brand: onsemi
SKU: 2N6045G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6045G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: 2N6045G.pdf

Description:: TRANS NPN DARL 100V 8A TO-220

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Product details

Overview

2N6045G from onsemi is an NPN silicon Darlington power transistor in TO-220 package, rated for 100 V_CEO(sus), 8 A continuous collector current, and 75 W power dissipation at T_C = 25°C. It delivers high DC current gain (h_FE = 1000 min @ I_C = 3.0 A), low V_CE(sat) ≤ 2.0 V @ I_C = 3.0 A/ I_B = 12 mA, and built-in base-emitter shunt resistors - used in medium-power linear amplifiers and low-speed switching circuits such as motor drivers and relay interfaces.

For engineers reviewing the 2N6045G datasheet, pinout, applications, or equivalent options, key selection criteria include sustained voltage rating (100 V), thermal resistance (R_θJC = 1.67°C/W), Darlington configuration benefits (high h_FE, integrated biasing), and Pb-free TO-220 compliance for industrial control and power supply designs.

Technical Context

The 2N6045G implements a monolithic Darlington pair with integrated base-emitter shunt resistors to stabilize bias and reduce external component count. Its structure supports high-current, low-frequency switching and analog amplification where gain stability across temperature (–65°C to +150°C) and robust ESD protection (HBM > 8 kV) are required.

It operates within safe operating area (SOA) limits defined by second-breakdown and thermal constraints, with normalized transient thermal resistance data enabling pulse-width-dependent junction temperature estimation. The device is not optimized for RF or high-speed digital switching due to f_T not specified and t_r/t_f ≥ 10 ns.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO(sus)	100 V min - sustains 100 V collector-emitter voltage at I_C = 100 mA with zero base drive, enabling use in 80 V rail systems with margin.
I_C (continuous)	8.0 A - supports load currents up to 8 A with heatsinking at T_C = 25°C; derates linearly above 25°C (0.60 W/°C).
h_FE	1000 min @ I_C = 3.0 A, V_CE = 4.0 V - provides high current amplification with minimal base drive, reducing driver stage complexity.
V_CE(sat)	≤ 2.0 V @ I_C = 3.0 A, I_B = 12 mA - limits conduction loss to ≤6 W at full load, critical for thermal management in enclosed enclosures.
R_θJC	1.67°C/W - enables precise junction temperature calculation when mounted on a heatsink; allows ~45°C rise per 27 W dissipated.
ESD Rating (HBM)	> 8000 V - withstands handling and board-level ESD events without protection circuitry, simplifying system-level design.

Pinout & Package

2N6045G uses the standard TO-220 package (Case 221A, Style 1) with three leads: Collector (tab), Base, and Emitter. The metal tab is electrically connected to the collector and must be insulated from chassis if not referenced to system ground.

Pin/Terminal	Circuit Role	Design Meaning
Collector (Tab)	Main current output path; tied to metal mounting surface	Requires electrical isolation when mounted to grounded heatsinks; dominates thermal path to heatsink.
Base	Control input for Darlington pair	Accepts low-current drive (e.g., 12 mA for 3 A output); internal shunt resistor stabilizes turn-off.
Emitter	Current return path and reference node	Connected to load ground or negative rail; carries full load current and defines output voltage reference.

Key Features

Feature	Design Value
Monolithic Darlington construction	Integrates two NPN transistors and base-emitter shunt resistors on one die, eliminating discrete bias network and improving gain consistency.
High h_FE (1000 min @ 3 A)	Reduces required base drive current by >10× vs. single-stage power transistors, easing microcontroller or logic-level interface design.
100 V V_CEO(sus) rating	Supports operation in 72–80 V industrial DC systems (e.g., telecom power, battery-powered motor controls) with safety margin against transients.
Pb-free, RoHS-compliant TO-220	Meets global environmental regulations; UL 94 V-0 epoxy ensures flame resistance in enclosed power modules.
HBM ESD rating > 8 kV	Enables direct handling and assembly without special ESD precautions, lowering manufacturing overhead in high-volume production.

Applications

DC Motor Control	Relay Driver Circuit
Use Scenario: Driving 24–48 V brushed DC motors in industrial actuators requiring 3–6 A peak current and slow PWM (< 1 kHz). IC Role / Device Role / Timing Role: NPN Darlington switch providing high-current, low-saturation switching with integrated bias stabilization. Use Value: Eliminates need for external base resistors and reduces gate-drive complexity versus MOSFET solutions at sub-100 V levels.	Use Scenario: Replacing mechanical relays in programmable logic controller (PLC) output modules handling 100 V AC/DC loads. IC Role / Device Role / Timing Role: High-voltage, high-current switching element interfacing microcontroller GPIO to inductive loads. Use Value: Withstands 100 V sustaining voltage and handles 8 A surges, enabling solid-state replacement of electromechanical relays with longer lifetime.
Linear Power Supply Pass Element	Heater/Resistive Load Controller
Use Scenario: Series pass transistor in adjustable 0–60 V, 5 A bench power supplies with analog feedback regulation. IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with stable h_FE over temperature. Use Value: High DC gain ensures precise current mirroring and low dropout error under varying load and thermal conditions.	Use Scenario: Phase-angle or burst-fire control of 100 V resistive heating elements in HVAC and industrial ovens. IC Role / Device Role / Timing Role: Medium-speed switching device triggered by zero-crossing triac drivers or optocouplers. Use Value: Low V_CE(sat) minimizes self-heating during conduction; SOA curves validate safe operation under repetitive 10 ms pulses.

DC Motor Control

Relay Driver Circuit

Use Scenario: Driving 24–48 V brushed DC motors in industrial actuators requiring 3–6 A peak current and slow PWM (< 1 kHz).

IC Role / Device Role / Timing Role: NPN Darlington switch providing high-current, low-saturation switching with integrated bias stabilization.

Use Value: Eliminates need for external base resistors and reduces gate-drive complexity versus MOSFET solutions at sub-100 V levels.

Use Scenario: Replacing mechanical relays in programmable logic controller (PLC) output modules handling 100 V AC/DC loads.

IC Role / Device Role / Timing Role: High-voltage, high-current switching element interfacing microcontroller GPIO to inductive loads.

Use Value: Withstands 100 V sustaining voltage and handles 8 A surges, enabling solid-state replacement of electromechanical relays with longer lifetime.

Linear Power Supply Pass Element

Heater/Resistive Load Controller

Use Scenario: Series pass transistor in adjustable 0–60 V, 5 A bench power supplies with analog feedback regulation.

IC Role / Device Role / Timing Role: Voltage-controlled current source operating in active region with stable h_FE over temperature.

Use Value: High DC gain ensures precise current mirroring and low dropout error under varying load and thermal conditions.

Use Scenario: Phase-angle or burst-fire control of 100 V resistive heating elements in HVAC and industrial ovens.

IC Role / Device Role / Timing Role: Medium-speed switching device triggered by zero-crossing triac drivers or optocouplers.

Use Value: Low V_CE(sat) minimizes self-heating during conduction; SOA curves validate safe operation under repetitive 10 ms pulses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN Darlington power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BD679A	Lower V_CEO = 80 V, h_FE = 750 min @ I_C = 2 A, TO-126 package	Limited to ≤60 V systems; unsuitable for 100 V bus applications	Select BD679A only when voltage stress is < 60 V and PCB space constraints favor smaller TO-126.
TIP122	V_CEO = 100 V, h_FE = 1000 min @ I_C = 3 A, but R_θJC = 2.0°C/W (vs. 1.67°C/W for 2N6045G)	Higher thermal resistance requires larger heatsink for same power dissipation	Choose TIP122 only if legacy footprint compatibility with TO-220AB is required and thermal margin permits 0.33°C/W penalty.

Compared with BD679A and TIP122, the 2N6045G offers superior thermal performance (R_θJC = 1.67°C/W), guaranteed 100 V sustaining capability, and Pb-free TO-220 packaging - making it optimal for new industrial power designs demanding reliability, regulatory compliance, and thermal efficiency.

Availability

2N6045G is available at Aetrix Electronics and suitable for DC motor control, relay driving, and linear power supply applications requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.

Supply support for 2N6045G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity technologies for automotive, industrial, cloud, and consumer markets.

The 2N6045G belongs to onsemi's legacy plastic medium-power complementary transistor family, designed specifically for cost-sensitive, thermally constrained industrial amplifier and switching applications where high DC gain and ruggedness outweigh high-frequency performance.

FAQ

What is the maximum continuous collector current rating for the 2N6045G?

The 2N6045G is rated for 8.0 A continuous collector current at case temperature T_C = 25°C. This rating decreases linearly with rising case temperature at 0.60 W/°C, meaning usable current drops to approximately 5.5 A at T_C = 75°C. Derating must follow the curve in Figure 1 of the official datasheet to avoid thermal runaway or second breakdown.

Does the 2N6045G have built-in base-emitter resistors?

Yes, the 2N6045G features monolithic construction with built-in base-emitter shunt resistors. These resistors provide automatic turn-off biasing, improve switching consistency, and eliminate the need for external pull-down components in most switching applications - a key differentiator from basic NPN transistors like the 2N2222 or BC547.

Is the 2N6045G pin-compatible with the TIP122?

No, the 2N6045G is not pin-compatible with the TIP122. While both use TO-220 packages, the 2N6045G has Collector-Base-Emitter (C-B-E) lead order, whereas the TIP122 uses Collector-Base-Emitter in the same physical orientation but differs in internal Darlington topology and thermal specification - requiring layout verification before substitution.

What is the safe operating area (SOA) limitation for the 2N6045G at DC operation?

At DC operation, the 2N6045G's SOA is thermally limited: at T_C = 25°C, it supports up to 8 A at V_CE ≤ 9.4 V, or 1 A at V_CE ≤ 75 V. Exceeding these combinations risks junction overheating. Second-breakdown limits apply above 100 µs pulse widths - refer to Figure 5 in the datasheet for exact boundaries.

Can the 2N6045G be used in linear regulator applications?

Yes, the 2N6045G is suitable for linear regulator pass element applications due to its high h_FE (1000 min), low V_CE(sat), and stable gain over temperature. It has been validated in 0–60 V, 5 A adjustable supplies; however, adequate heatsinking and SOA compliance under worst-case dropout conditions must be confirmed per design.

2N6045G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

Transistor Type:: NPN - Darlington

Current - Collector (Ic) (Max):: 8 A

Voltage - Collector Emitter Breakdown (Max):: 100 V

Vce Saturation (Max) @ Ib, Ic:: 2V @ 12mA, 3A

Current - Collector Cutoff (Max):: 20µA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 1000 @ 3A, 4V

Power - Max:: 75 W

Frequency - Transition:: -

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

2N6045G FAQ

1.How can I place an order for 2N6045G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6045G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6045G reliable?

The price and inventory of 2N6045G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6045G is usually 5 days.

3.What payment methods are accepted for 2N6045G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6045G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6045G?

2N6045G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6045G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6045G?

For technical support, including 2N6045G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6045G requirements.

6.How does Aetrix verify that 2N6045G is sourced from the original manufacturer or authorized distributors?

All 2N6045G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6045G meets industry standards.

7.What is the process for return or replacement of 2N6045G?

All 2N6045G units undergo pre-shipment inspection (PSI). If there is an issue with 2N6045G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6045G part is unused and in its original packaging.

Return procedure for 2N6045G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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