My Inquiry
My Account
onsemi 2N6052
- Part No.:
- 2N6052
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-204AA, TO-3
- Datasheet:
-
2N6052.pdf
- Description:
- TRANS PNP DARL 100V 12A TO204
- Quantity:
- Payment:
- Shipping:
Inventory:5,659
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
2N6052 from ON Semiconductor is an NPN Darlington silicon power transistor designed for low-frequency switching and general-purpose amplifier applications. It delivers 12 A continuous collector current, sustains 100 Vdc collector-emitter voltage, and achieves typical DC current gain of 3500 at 5.0 A - enabling high-gain, low-base-drive switching in industrial motor controls and relay drivers.
For engineers reviewing the 2N6052 datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-204AA (TO-3) metal package thermal performance (RθJC = 1.17°C/W), built-in base-emitter shunt resistors, and verified safe operating area up to 200°C junction temperature under pulsed conditions.
Technical Context
The 2N6052 operates as a monolithic NPN Darlington pair with integrated base-emitter shunt resistors, eliminating external bias network requirements. Its structure supports high-current switching with low saturation voltage (VCE(sat) = 3.0 V at 12 A/120 mA) and robust second-breakdown immunity per Figure 6 SOA curves.
It features complementary PNP pairing with 2N6058/2N6059, shares identical TO-204AA mechanical outline and thermal resistance, and is rated for –65°C to +200°C junction operation - making it suitable for high-reliability industrial power stages where thermal cycling and sustained conduction are critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 100 Vdc minimum - ensures reliable blocking in 80–100 V bus applications without derating |
| IC Continuous | 12 Adc - supports direct drive of solenoids, contactors, and medium-power DC loads |
| hFE (Typ) | 3500 @ IC = 5.0 Adc - reduces required base drive current to ~1.4 mA for 5 A output |
| PD @ TC = 25°C | 150 W - enables high-power linear or switching operation with heatsink mounting |
| RθJC | 1.17°C/W - allows precise junction temperature prediction using case temperature measurement |
| VCE(sat) | 3.0 V @ IC = 12 Adc, IB = 120 mAdc - limits conduction loss to 36 W at full load |
| TJ Range | –65°C to +200°C - supports operation in harsh environments including engine compartments and industrial ovens |
Pinout & Package
2N6052 uses the TO-204AA (TO-3) metal can package with case-connected collector, enabling direct heatsinking and high-power dissipation. The package complies with JEDEC Case 1–07 standards and features a 1.550-inch reference height (39.37 mm).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Accepts low-current drive (≤200 mA max) to switch up to 12 A collector current |
| 2 (Emitter) | Current return path | Connected to system ground or low-side return; carries full load current |
| Case (Collector) | Main power output terminal | Electrically connected to collector; must be isolated from chassis unless common-collector topology is used |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington construction | Integrates driver and output transistors on single die - eliminates interconnect inductance and matching drift |
| Built-in base-emitter shunt resistors | Ensures turn-off reliability without external pull-down; prevents leakage-induced false triggering |
| High VCEO(sus) rating | 100 Vdc minimum - supports 24 V, 48 V, and 72 V industrial control buses with margin |
| Second-breakdown limited SOA | Validated pulse limits up to 5 ms at 200°C - enables robust inductive load switching |
| JEDEC-registered thermal data | RθJC = 1.17°C/W confirmed - allows accurate thermal design without characterization |
Applications
| Industrial Motor Control | DC Power Relay Driver |
|---|---|
Use Scenario: Driving 12 A DC brushed motors in conveyor systems and automated valves. IC Role / Device Role / Timing Role: High-current NPN switch controlling motor direction and enable via base signal. Use Value: 3500 hFE minimizes microcontroller GPIO loading; 100 V rating accommodates back-EMF spikes during commutation. | Use Scenario: Replacing electromechanical relays in PLC output modules. IC Role / Device Role / Timing Role: Solid-state switch isolating logic-level control from 24–48 V DC coil circuits. Use Value: Built-in shunt resistors ensure fast, deterministic turn-off - eliminating contact bounce and coil arcing. |
| Heater Load Controller | Welding Equipment Interface |
Use Scenario: Phase-angle or burst-fire control of resistive heating elements in industrial ovens. IC Role / Device Role / Timing Role: Low-frequency power switch modulating AC line power via transformer-coupled gate drive. Use Value: 200°C max junction temperature supports continuous conduction in high-ambient enclosures. | Use Scenario: Triggering high-current SCR/thyristor gates in spot-welding timers. IC Role / Device Role / Timing Role: High-current pulse generator delivering ≥100 mA base pulses to thyristor bases. Use Value: 12 A peak capability and fast switching (tr/tf ≤ 10 ns) enable precise weld timing control. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N6059 | Identical VCEO(sus), IC, and package; same SOA curve (Figure 6); differs only in minor hFE binning | Same industrial switching roles; validated in identical relay/motor designs per ON Semi documentation | Select 2N6059 when tighter hFE consistency across production lots is required |
| MJ11015 | Higher VCEO (125 V), lower hFE (1000 typ), same TO-3 package and RθJC | Better suited for 100+ V bus systems; requires higher base drive current than 2N6052 | Choose MJ11015 only when >100 V blocking is mandatory and base drive headroom exists |
Compared with 2N6052, 2N6059 offers identical electrical and thermal specifications with tighter hFE distribution, while MJ11015 trades gain for higher voltage rating - making 2N6052 the optimal balance of gain, voltage, and thermal performance for 24–72 V industrial switching.
Availability
2N6052 is available at Aetrix Electronics and suitable for industrial motor control, DC relay driving, and heater load management requiring stable component supply and long-term manufacturing continuity.
Supply support for 2N6052 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global supplier of energy-efficient semiconductor solutions, specializing in power management, analog, sensor, and discrete devices for automotive, industrial, and cloud infrastructure markets.
The 2N6052 belongs to ON Semiconductor's legacy silicon power transistor family, engineered specifically for ruggedized, high-current, low-frequency switching in industrial automation and power conversion equipment.
FAQ
What is the maximum continuous collector current rating for the 2N6052?
The 2N6052 is rated for 12 Adc continuous collector current at case temperature TC = 25°C. Derating applies above 25°C at 0.857 W/°C, and actual usable current depends on heatsink efficiency and ambient conditions. The device maintains safe operation up to 200°C junction temperature, as confirmed by its SOA curve in Figure 6 of the official ON Semiconductor datasheet for 2N6052.
Does the 2N6052 have built-in base-emitter resistors?
Yes, the 2N6052 features monolithic construction with built-in base-emitter shunt resistors. This design ensures reliable turn-off behavior without requiring external pull-down components, reducing component count and improving noise immunity in industrial control environments. The presence and function of these resistors are explicitly stated in the product summary and confirmed across electrical test conditions in the ON Semiconductor 2N6052 datasheet.
What package type does the 2N6052 use, and how is the collector connected?
The 2N6052 uses the TO-204AA (TO-3) metal can package, also referenced as Case 1–07. Its collector is internally connected to the metal case, which serves as both the primary heat dissipation path and the collector terminal - requiring electrical isolation from the mounting heatsink unless a common-collector configuration is intentionally implemented. This mechanical and electrical mapping is defined in the Package Dimensions section of the 2N6052 datasheet.
What is the typical DC current gain (hFE) of the 2N6052, and at what conditions is it specified?
The 2N6052 has a typical DC current gain (hFE) of 3500 at IC = 5.0 Adc and VCE = 3.0 Vdc, as stated in the "Features" section and confirmed in Figure 9 of the ON Semiconductor 2N6052 datasheet. Minimum hFE is 750 at IC = 6.0 Adc and 100 at IC = 12 Adc - supporting design margin analysis for worst-case base drive requirements.
Can the 2N6052 be used in complementary pairs with other transistors?
Yes, the 2N6052 is explicitly designed as the NPN complement to the PNP 2N6058, with matched voltage ratings (100 V vs. 80 V), thermal characteristics (identical RθJC and TO-3 package), and SOA curves. The datasheet groups them in Figure 6 and labels them "Darlington Complementary," confirming their intended use in push-pull, H-bridge, and Class AB amplifier topologies requiring matched gain and breakdown behavior.
2N6052 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-204AA, TO-3
- Packaging:
- Tray
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 12 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 120mA, 12A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 750 @ 6A, 3V
- Power - Max:
- 150 W
- Frequency - Transition:
- -
- Operating Temperature:
- -65°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-204 (TO-3)
2N6052 FAQ
1.How can I place an order for 2N6052 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6052 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6052 reliable?
The price and inventory of 2N6052 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6052 is usually 5 days.
3.What payment methods are accepted for 2N6052?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6052 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6052?
2N6052 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6052 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6052?
For technical support, including 2N6052 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6052 requirements.
6.How does Aetrix verify that 2N6052 is sourced from the original manufacturer or authorized distributors?
All 2N6052 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6052 meets industry standards.
7.What is the process for return or replacement of 2N6052?
All 2N6052 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6052, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6052 part is unused and in its original packaging.
Return procedure for 2N6052:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N6052 Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
