onsemi 2N6052G
- Part No.:
- 2N6052G
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-204AA, TO-3
- Datasheet:
-
2N6052G.pdf
- Description:
- TRANS PNP DARL 100V 12A TO204
- Quantity:
- Payment:

- Shipping:

Inventory:8,460
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Product details
Overview
2N6052G from onsemi is a complementary Darlington silicon power transistor in TO-204AA (TO-3) metal package, rated for 100 VCEO(sus), 12 A continuous collector current, and 150 W power dissipation at TC = 25°C. It features monolithic construction with built-in base-emitter shunt resistors and delivers hFE = 750 (min) at IC = 6.0 A, enabling high-gain low-frequency switching in industrial motor controls.
For engineers reviewing the 2N6052G datasheet, pinout, applications, or equivalent options, this device is selected for robust linear amplification and DC/low-frequency switching where high DC current gain, thermal stability up to +200°C junction temperature, and rugged TO-3 mechanical reliability are required.
Technical Context
The 2N6052G implements a monolithic complementary Darlington pair with integrated base-emitter shunt resistors to ensure predictable turn-off behavior and reduce external bias complexity. Its VCEO(sus) = 100 V (min) and IC = 12 A rating support operation in high-voltage, medium-current switching nodes such as relay drivers and power supply output stages.
Thermal design is enabled by RJC = 1.17°C/W max and a wide operating temperature range of −65°C to +200°C. The device exhibits VCE(sat) ≤ 2.0 V at IC = 6.0 A / IB = 24 mA and VBE(sat) ≤ 4.0 V at IC = 12 A / IB = 120 mA - parameters critical for minimizing conduction loss in saturated-switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO(sus) | 100 V min - sustains 100 V across C–E at IC = 100 mA with zero base drive, defining safe blocking capability in relay and solenoid drivers. |
| IC Continuous | 12 A - supports sustained load currents up to 12 A with heatsink, suitable for industrial actuator control without derating below 25°C case temperature. |
| PD @ TC = 25°C | 150 W - enables high-power linear or switching operation when mounted on a low-thermal-resistance heatsink. |
| hFE @ IC = 6 A | 750 min - provides high DC current gain to minimize required base drive current, reducing driver stage complexity and power loss. |
| RJC | 1.17°C/W max - allows precise junction temperature estimation from case temperature measurement, essential for thermal margin validation. |
| TJ Range | −65°C to +200°C - ensures operational reliability in extreme environments including furnace controls and under-hood automotive subsystems. |
Pinout & Package
2N6052G uses the TO-204AA (TO-3) metal can package with collector connected to the case. Pin 1 is Base, Pin 2 is Emitter; the metal case serves as the Collector terminal. This configuration requires electrical isolation of the case from heatsink unless collector is referenced to chassis ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Base | Control input requiring current-limited drive; internal shunt resistor aids turn-off but does not eliminate need for active base pull-down in high-speed switching. |
| Pin 2 | Emitter | Reference node for base-emitter bias; polarity defines NPN/PNP complement - 2N6052G is the NPN half of a complementary pair. |
| Metal Case | Collector | High-current output terminal; electrically tied to collector; must be insulated from mounting surface unless circuit topology permits direct chassis connection. |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic Darlington construction | Integrates driver and output transistors on one die, eliminating interconnect parasitics and ensuring matched thermal tracking between stages. |
| Built-in base-emitter shunt resistors | Reduces external component count for reliable turn-off; prevents leakage-induced false turn-on in high-impedance base drive circuits. |
| 100 V sustaining voltage | Supports operation in 48 V and 72 V industrial bus systems with margin against inductive kickback in relay/solenoid loads. |
| Pb-free TO-3 package | Complies with RoHS Directive 2011/65/EU; compatible with standard SnPb and lead-free solder reflow profiles per J-STD-020. |
Applications
| Industrial Relay Drivers | DC Motor Speed Controllers |
|---|---|
Use Scenario: Driving 24–48 V DC electromagnetic relays with coil inductance >100 mH and hold current 50–200 mA. IC Role / Device Role / Timing Role: High-gain saturated switch providing low VCE(sat) to minimize power loss during steady-state relay closure. Use Value: hFE ≥ 750 reduces required base drive to <30 mA, enabling direct interface with microcontroller GPIO or optocoupler outputs. |
Use Scenario: PWM-based speed regulation of brushed DC motors in factory automation conveyors (12–24 V, 5–10 A). IC Role / Device Role / Timing Role: Low-frequency (<5 kHz) power switch in the high-side or low-side leg of an H-bridge output stage. Use Value: 150 W power rating and 1.17°C/W RJC allow stable operation at full load with passive heatsinking, avoiding forced-air complexity. |
| Linear Power Supply Pass Transistors | High-Voltage Lamp Dimmers |
Use Scenario: Series pass element in adjustable 0–30 V, 0–10 A bench power supplies with analog voltage/current regulation. IC Role / Device Role / Timing Role: Linear-mode current amplifier delivering precise load current while dissipating up to 60 W continuously. Use Value: −65°C to +200°C TJ range ensures reliability during extended overload conditions and ambient temperatures up to +70°C. |
Use Scenario: Phase-angle dimming control of 100–120 V AC incandescent or halogen lamps in commercial lighting systems. IC Role / Device Role / Timing Role: DC-coupled trigger amplifier driving the gate of a main TRIAC or SCRs in zero-crossing isolated dimmer modules. Use Value: VCEO(sus) = 100 V supports safe operation with peak line voltages up to 170 V, accommodating 120 V AC ±10% tolerance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-gain complementary power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2N6059G | Same TO-3 package, higher VCEO(sus) = 120 V (min), lower hFE = 500 (min) at IC = 6 A. | Better suited for 120 V AC line-connected circuits requiring higher blocking voltage; less gain demands stronger base drive. | Select 2N6059G when VCEO margin >20 V is mandatory and base drive capability exceeds 40 mA. |
| MJ15003 | TO-3 package, 120 V VCEO, 20 A IC, hFE = 20–70 (typ), no internal shunt resistors. | Higher current rating but significantly lower gain; requires external turn-off circuitry and careful SOA management. | Choose MJ15003 only when peak current >12 A is required and system-level base drive and protection circuitry is already designed. |
Compared with 2N6052G, 2N6059G offers higher voltage headroom at reduced DC gain, while MJ15003 trades gain and integration for raw current capacity - making 2N6052G optimal for gain-sensitive, thermally constrained 100 V-class switching where simplicity and reliability are prioritized.
Availability
2N6052G is available at Aetrix Electronics and suitable for industrial relay drivers, DC motor speed controllers, and linear power supply pass transistors requiring stable component supply, long-term lifecycle support, and Pb-free compliance.
Supply support for 2N6052G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.
The 2N6052G belongs to onsemi's legacy high-power bipolar transistor family, engineered for rugged, high-reliability linear amplification and low-frequency switching in harsh industrial environments.
FAQ
What is the maximum continuous collector current rating for the 2N6052G?
The 2N6052G is rated for 12 A continuous collector current (IC) at case temperature TC = 25°C. Derating is required above 25°C at 0.857 W/°C, and actual usable current depends on heatsink thermal resistance and ambient conditions. The device also supports 20 A peak current under pulsed conditions per its maximum ratings table.
Does the 2N6052G have built-in base-emitter resistors, and how do they affect circuit design?
Yes, the 2N6052G features monolithic construction with built-in base-emitter shunt resistors. These resistors provide a defined discharge path for stored base charge, improving turn-off consistency and reducing susceptibility to leakage-induced false turn-on. However, they do not eliminate the need for active base pull-down in high-speed switching applications - external base resistors may still be required for precise timing control.
What is the safe operating area (SOA) limitation for the 2N6052G at DC or low-frequency operation?
The 2N6052G's DC safe operating area is bounded by thermal limits (150 W at TC = 25°C) and second breakdown. At VCE = 50 V, the maximum sustainable IC is approximately 2.5 A under DC conditions per Figure 5. Operation beyond these boundaries risks thermal runaway or localized junction failure, especially without adequate heatsinking or current limiting.
Can the 2N6052G be used in complementary pairs, and which part is its PNP counterpart?
Yes, the 2N6052G is the NPN half of a complementary Darlington pair. Its designated PNP counterpart is the 2N6051G, which shares identical package (TO-3), voltage rating (100 V VCEO(sus)), current rating (12 A), and thermal characteristics. Both devices are optimized for matched performance in push-pull amplifier and H-bridge output stages.
Is the 2N6052G RoHS-compliant, and what does the 'G' suffix indicate?
Yes, the 2N6052G is RoHS-compliant. The 'G' suffix explicitly denotes a Pb-free (lead-free) version per onsemi's packaging nomenclature, confirming compliance with EU Directive 2011/65/EU. This applies to both die attach and external terminations, and the device is qualified for standard lead-free reflow profiles.
2N6052G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-204AA, TO-3
- Packaging:
- Tray
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 12 A
- Voltage - Collector Emitter Breakdown (Max):
- 100 V
- Vce Saturation (Max) @ Ib, Ic:
- 3V @ 120mA, 12A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 750 @ 6A, 3V
- Power - Max:
- 150 W
- Frequency - Transition:
- -
- Operating Temperature:
- -65°C ~ 200°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-204 (TO-3)
2N6052G FAQ
1.How can I place an order for 2N6052G through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6052G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6052G reliable?
The price and inventory of 2N6052G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6052G is usually 5 days.
3.What payment methods are accepted for 2N6052G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6052G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6052G?
2N6052G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6052G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6052G?
For technical support, including 2N6052G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6052G requirements.
6.How does Aetrix verify that 2N6052G is sourced from the original manufacturer or authorized distributors?
All 2N6052G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6052G meets industry standards.
7.What is the process for return or replacement of 2N6052G?
All 2N6052G units undergo pre-shipment inspection (PSI). If there is an issue with 2N6052G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6052G part is unused and in its original packaging.
Return procedure for 2N6052G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N6052G Tags

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MMBT3906LT1G
onsemi

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MMBT3904-7-F
Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
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