Microchip Technology 2N6059
- Part No.:
- 2N6059
- Manufacturer:
- Microchip Technology
- Category:
- Single Bipolar Transistors
- Package:
- -
- Description:
- PNP POWER TRANSISTOR SILICON AMP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
2N6059 from STMicroelectronics is a silicon NPN power Darlington transistor in TO-3 metal package, designed for high-current linear amplification and low-frequency switching in industrial power stages. It delivers 12 A continuous collector current, 150 W total dissipation at Tc ≤ 25 °C, and integrated antiparallel collector-emitter diode - used in motor control circuits, DC-DC converter output stages, and industrial relay drivers.
For engineers reviewing the 2N6059 datasheet, 2N6059 pinout, 2N6059 application, or 2N6059 equivalent, key selection criteria include VCEO = 100 V, hFE ≥ 750 at IC = 6 A, VCE(sat) = 2 V (IC = 6 A, IB = 24 mA), thermal resistance Rthj-case = 1.17 °C/W, and built-in antiparallel diode for inductive load commutation.
Technical Context
The 2N6059 employs monolithic epitaxial-base Darlington configuration with two cascaded NPN transistors on a single die, enabling high DC current gain (hFE up to 100 at 12 A). Its internal structure includes integrated base-emitter resistors (R1 ≈ 6 kΩ, R2 ≈ 55 Ω) for bias stabilization and improved turn-off behavior.
Rated for 200 °C maximum junction temperature and −65 to 200 °C storage range, it supports rugged operation in high-temperature industrial environments. The antiparallel diode is monolithically integrated between collector and emitter, eliminating need for external flyback diodes in inductive switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 100 V - Maximum safe collector-emitter voltage with open base; defines voltage headroom in 48–80 V industrial bus applications. |
| IC | 12 A continuous - Sustained output current capability for motor drive half-bridges and high-power linear regulators. |
| Ptot | 150 W at Tc ≤ 25 °C - Requires heatsink with thermal resistance ≤ 1.17 °C/W to maintain Tj ≤ 200 °C under full load. |
| hFE | 750 min at IC = 6 A - Enables low base drive current (e.g., 8 mA typical for 6 A output), reducing driver stage complexity. |
| VCE(sat) | 2 V at IC = 6 A, IB = 24 mA - Low saturation voltage minimizes conduction loss (12 W at 6 A), critical for thermal management. |
| Rthj-case | 1.17 °C/W - Directly determines heatsink sizing; e.g., 0.5 °C/W heatsink + thermal interface yields ~1.7 °C/W system Rth. |
Pinout & Package
Package: TO-3 metal case (JEDEC standard), hermetically sealed, electrically isolated tab (collector-connected), suitable for bolt-down heatsinking with insulating washers.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Collector (Case/Tab) | Main power output terminal | Electrically connected to metal case; must be insulated from chassis unless system ground reference permits direct mounting. |
| Emitter | Current return path | Low-impedance emitter connection; carries full load current and serves as reference for base drive circuitry. |
| Base | Control input | High-impedance Darlington input requiring current-limited drive; internal R1/R2 resistors reduce external bias component count. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated antiparallel C–E diode | Eliminates discrete flyback diode in relay/motor coil snubbing, reducing BOM count and PCB area. |
| Monolithic Darlington structure | Ensures matched transistor characteristics and stable hFE across temperature vs. discrete pairs. |
| Internal base-emitter resistors | R1 ≈ 6 kΩ and R2 ≈ 55 Ω provide self-biasing and improve turn-off speed without external components. |
| TO-3 metal package | Enables direct mechanical attachment to heatsinks with <1.2 °C/W thermal path; supports >100,000 thermal cycles in industrial duty. |
Applications
| Industrial Motor Control | DC-DC Converter Output Stage |
|---|---|
Use Scenario: Driving 5–10 A brushed DC motors in PLC-controlled conveyor systems with PWM frequencies below 5 kHz. IC Role / Device Role / Timing Role: High-current switch in half-bridge output stage; handles inductive kickback via integrated C–E diode. Use Value: Reduces external protection component count by one diode per channel and maintains <2 V conduction drop at full load. | Use Scenario: Output switch in 48 V input, 12 V/8 A industrial buck converter operating at 1–5 kHz. IC Role / Device Role / Timing Role: Low-frequency power switch replacing MOSFETs where gate drive simplicity and ruggedness outweigh switching speed needs. Use Value: Eliminates need for gate driver IC and bootstrap circuitry while sustaining 12 A continuous with <150 W dissipation. |
| AC/DC Power Supply Regulator | Industrial Relay Driver |
Use Scenario: Series pass element in linear-regulated 24 V/6 A industrial power supply with thermal foldback protection. IC Role / Device Role / Timing Role: Linear-mode power transistor dissipating up to 100 W during transient overloads. Use Value: Maintains regulation stability with hFE ≥ 750 at 6 A and Rthj-case = 1.17 °C/W enabling compact heatsink design. | Use Scenario: Driving 125 VAC/10 A electromechanical relays in factory automation I/O modules. IC Role / Device Role / Timing Role: High-gain switch interfacing microcontroller GPIO to inductive relay coil with integrated flyback path. Use Value: Base current requirement of ~8 mA (for 6 A coil hold) simplifies MCU-level drive and eliminates external transistor buffer. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN Darlington power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJ11015 | VCEO = 100 V, IC = 10 A, hFE = 1000 min at IC = 5 A; TO-3, no integrated diode. | Requires external flyback diode for inductive loads; higher hFE enables lower base drive but less robust short-circuit tolerance. | Prefer when higher DC gain is prioritized and external diode integration is acceptable. |
| BDW83C | VCEO = 100 V, IC = 15 A, hFE = 750 min at IC = 8 A; TO-218, plastic package, no integrated diode. | Lacks monolithic antiparallel diode; TO-218 offers lower thermal resistance (1.0 °C/W) but requires insulating hardware for heatsink mounting. | Choose for higher current rating and better thermal performance where board space allows larger footprint and external diode. |
Compared with MJ11015 and BDW83C, the 2N6059 uniquely combines integrated antiparallel diode, TO-3 ruggedness, and verified 12 A/150 W operation - making it optimal for space-constrained industrial switching where diode omission reduces part count and failure modes.
Availability
2N6059 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter output stages, and AC/DC linear regulator designs requiring stable component supply and long-term industrial lifecycle support.
Supply support for 2N6059 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, designing and manufacturing analog, power, MCU, and sensor solutions for industrial, automotive, and consumer markets.
The 2N6059 belongs to ST's legacy power bipolar transistor family, engineered specifically for high-reliability linear and low-frequency switching use in harsh industrial environments - emphasizing thermal robustness, voltage margin, and integrated protection.
FAQ
Is the 2N6059 still in active production?
No - STMicroelectronics has marked the 2N6059 as obsolete (as confirmed in the February 2003 datasheet footer). However, Aetrix Electronics maintains legacy inventory with full traceability and provides extended lifecycle support including obsolescence mitigation planning and cross-reference guidance for qualified replacements.
What is the function of the integrated antiparallel diode?
The monolithically integrated collector-emitter diode provides a low-inductance, matched-path flyback path for inductive loads. It conducts reverse current during switch-off transients, preventing voltage spikes above VCEO and eliminating need for an external diode in relay, solenoid, or motor coil drive circuits.
Can the 2N6059 be used in parallel configurations?
Yes - its monolithic Darlington structure and matched internal transistor characteristics support stable current sharing when paralleled with identical units. Designers must ensure matched heatsinking, emitter ballasting resistors (0.1 Ω typical), and symmetrical layout to avoid thermal runaway under high-current conditions.
What is the significance of the "VCEX" rating?
VCEX = 100 V specifies collector-emitter breakdown voltage with VBE = −1.5 V (base driven negative), reflecting ruggedness against negative base transients during fast turn-off. This rating ensures reliable operation in noisy industrial environments where base line ringing could otherwise trigger premature breakdown.
2N6059 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- Transistor Type:
- -
- Current - Collector (Ic) (Max):
- -
- Voltage - Collector Emitter Breakdown (Max):
- -
- Vce Saturation (Max) @ Ib, Ic:
- -
- Current - Collector Cutoff (Max):
- -
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- -
- Power - Max:
- -
- Frequency - Transition:
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
2N6059 FAQ
1.How can I place an order for 2N6059 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6059 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6059 reliable?
The price and inventory of 2N6059 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6059 is usually 5 days.
3.What payment methods are accepted for 2N6059?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6059 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6059?
2N6059 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6059 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6059?
For technical support, including 2N6059 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6059 requirements.
6.How does Aetrix verify that 2N6059 is sourced from the original manufacturer or authorized distributors?
All 2N6059 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6059 meets industry standards.
7.What is the process for return or replacement of 2N6059?
All 2N6059 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6059, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6059 part is unused and in its original packaging.
Return procedure for 2N6059:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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