onsemi 2N6076

Overview

2N6076 from Fairchild Semiconductor is a PNP small-signal transistor designed for general-purpose amplification and switching in low-power analog and digital circuits. It features a minimum collector-emitter breakdown voltage of –25 V, DC current gain (hFE) ≥100 at VCE = –1V and IC = –10 mA, and maximum collector current of 500 mA - suitable for biasing, signal inversion, and load switching in portable audio and sensor interface stages.

For engineers reviewing the 2N6076 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, –25 V BVCEO rating, 625 mW power dissipation limit, junction temperature range (–55°C to +150°C), and verified hfe bandwidth performance up to 1 kHz under standard test conditions.

Technical Context

The 2N6076 operates as a silicon bipolar junction transistor with fixed PNP polarity and common-emitter configuration. Its DC current gain spans 100–500, and small-signal hfe reaches up to 750 at IC = –10 mA and f = 1 kHz, indicating suitability for mid-frequency amplification tasks below 100 kHz.

Thermal design requires attention to RJA = 200°C/W and maximum junction temperature of 150°C; absolute ratings specify –25 V VCBO/VCES and –5 V VEBO, limiting use in circuits with reverse-biased base-emitter or high-voltage collector swings.

Key Specifications

Pinout & Package

2N6076 is housed in a TO-92 plastic package with standard through-hole mounting and three terminals: Emitter (E), Base (B), Collector (C). Pin identification follows JEDEC TO-92 outline: viewed from flat side with leads down, left-to-right pin order is E–B–C.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP small-signal transistor applications.

Compared with MPSA92 and BC557, the 2N6076 offers balanced voltage rating and gain stability for cost-sensitive industrial controls, while avoiding over-specification in high-voltage or ultra-low-noise roles - making it optimal for general-purpose PNP switching where –25 V and 100–500 hFE meet system requirements.

Availability

2N6076 is available at Aetrix Electronics and suitable for audio pre-amplification, sensor signal conditioning, digital level shifting, and relay driver interfaces requiring stable component supply and long-term industrial availability.

Supply support for 2N6076 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete devices before its acquisition by ON Semiconductor in 2016.

The 2N6076 belongs to Fairchild's legacy general-purpose bipolar transistor family, engineered for reliability and consistency in low-voltage, medium-current linear and switching functions across consumer and industrial electronics.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6076?

The 2N6076 has a guaranteed minimum collector-emitter breakdown voltage (BVCEO) of –25 V at IC = –10 mA and IB = 0. This rating defines the maximum reverse voltage that can be applied between collector and emitter before uncontrolled conduction occurs. Operation beyond this value risks permanent device failure. The 2N6076 must be used within this limit in all circuit configurations, including switching and amplification modes.

Does the 2N6076 support surface-mount assembly?

No, the 2N6076 is packaged exclusively in the through-hole TO-92 case and is not offered in any surface-mount variant. Its leaded construction requires hole drilling and wave or hand soldering. For SMT alternatives, engineers should evaluate functionally similar PNP transistors such as the MMBT3906 (SOT-23) - but note that the 2N6076 itself does not support automated pick-and-place or reflow processes.

What is the typical DC current gain (hFE) of the 2N6076 at low collector current?

The 2N6076 exhibits a minimum hFE of 100 at VCE = –1 V and IC = –10 mA, with a maximum of 500 under the same conditions. At lower currents (e.g., IC = –1 mA), hFE may rise slightly but is not characterized in the official datasheet. Designers should use the 100–500 range for worst-case base drive calculations, and the 2N6076 remains stable across this span without secondary breakdown concerns in linear operation.

Can the 2N6076 be used in place of an NPN transistor like the 2N3904?

No - the 2N6076 is a PNP transistor and cannot directly replace the NPN 2N3904 without circuit topology changes. Their polarities are opposite: the 2N6076 sinks current from collector to emitter, while the 2N3904 sources it. Swapping them would invert logic states and likely cause biasing failures. If substitution is needed, a true PNP counterpart such as the 2N3906 should be considered instead of the 2N6076 for NPN-replacement scenarios.

Is the 2N6076 compliant with modern environmental regulations?

Yes, the 2N6076 is Pb-free and complies with the EU RoHS Directive 2011/65/EU, as confirmed in the original Fairchild datasheet Rev. 1.0.0. It contains no intentionally added lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE. The 2N6076 is suitable for use in environmentally regulated markets, though end-product compliance depends on full system-level assessment beyond the component itself.