onsemi 2N6107

Overview

2N6107 from onsemi is a PNP silicon power transistor in TO-220 package, rated for 70 V_CEO, 7 A continuous collector current, and 40 W power dissipation at T_C = 25°C. It delivers high DC current gain (h_FE ≥ 30 at I_C = 2.0 A), supports switching and linear amplifier applications, and is RoHS-compliant with Pb-free packaging.

For engineers reviewing the 2N6107 datasheet, pinout, applications, or equivalent options, key selection criteria include V_CEO = 70 V, I_C = 7.0 A, P_D = 40 W, h_FE ≥ 30, and TO-220 thermal resistance R_θJC = 3.125°C/W - all critical for power stage design, thermal management, and reliability validation in industrial control and power conversion circuits.

Technical Context

The 2N6107 operates as a medium-power PNP bipolar junction transistor optimized for linear amplification and hard-switching duty. Its V_CEO(sus) = 70 V and V_CB = 80 V support robust blocking in high-side switch configurations, while its f_T = 10 MHz enables stable operation up to audio-frequency switching.

Thermal performance is defined by R_θJC = 3.125°C/W and a maximum junction temperature of +150°C, enabling reliable operation under pulsed loads when mounted on heatsinks. Safe operating area (SOA) curves confirm capability for 7 A at 10 V (DC), with secondary breakdown limits validated for single-pulse conditions up to 100 ms.

Key Specifications

Pinout & Package

2N6107 uses the standard TO-220 package (Case 221A, Style 1), with metal tab electrically connected to collector. Mounting requires insulating hardware unless collector is at system ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD127G and BD139, the 2N6107 uniquely combines TO-220 mechanical robustness, 7 A current capacity, and 70 V blocking in a single through-hole package - making it irreplaceable in legacy industrial power modules requiring field-serviceable replacement and proven thermal interface design.

Availability

2N6107 is available at Aetrix Electronics and suitable for industrial motor drives, linear power supplies, auxiliary SMPS regulation, and overvoltage protection circuits requiring stable component supply and long-term obsolescence management.

Supply support for 2N6107 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6107 belongs to onsemi's legacy plastic power transistor family designed for rugged, cost-effective discrete power control in industrial automation, power conversion, and analog signal conditioning systems.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6107?

The 2N6107 has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 70 Vdc at I_C = 100 mAdc and I_B = 0. This rating is confirmed in the Absolute Maximum Ratings table and Electrical Characteristics section of the official onsemi datasheet (2N6107/D, Rev. 12). Exceeding this voltage risks avalanche breakdown and permanent device failure. The 2N6107 is therefore suited for 48 V nominal systems with appropriate safety margin.

Is the 2N6107 pin-compatible with other transistors in the same TO-220 package?

The 2N6107 uses standard TO-220 pinout: Pin 1 = Base, Pins 2 & 4 = Collector (tab-connected), Pin 3 = Emitter. While physically compatible with other TO-220 PNP transistors like 2N6109 or MJE15032, electrical parameters differ - e.g., 2N6109 has V_CEO = 50 V and higher h_FE. Substitution requires verification of voltage, current, gain, and SOA requirements. The 2N6107 itself is not a drop-in replacement for NPN devices such as 2N6292 due to polarity reversal.

Does the 2N6107 have a documented thermal resistance value?

Yes, the 2N6107 has a specified thermal resistance from junction to case (R_θJC) of 3.125°C/W, per the Thermal Characteristics table in the onsemi datasheet. This value is measured under standardized conditions and enables accurate junction temperature estimation: T_J = T_C + (P_D × 3.125). For example, at 20 W dissipation and T_C = 60°C, T_J = 122.5°C - well within the −65°C to +150°C operating range. The 2N6107 requires mechanical mounting to a heatsink for sustained operation above ~5 W.

What is the DC current gain (h_FE) specification for the 2N6107?

The 2N6107 guarantees a minimum DC current gain (h_FE) of 30 when tested at I_C = 2.0 Adc and V_CE = 4.0 Vdc, per the Electrical Characteristics table. Typical values exceed 100 under these conditions. This gain level determines required base drive current - for example, to achieve I_C = 7.0 A in saturation, a minimum I_B ≥ 233 mA is needed assuming h_FE = 30. The 2N6107's h_FE remains stable across its operating temperature range, supporting predictable biasing in linear applications.

Is the 2N6107 still in active production or considered obsolete?

The 2N6107 is marked as "not recommended for new design" in the onsemi datasheet (Note 5, Page 4), indicating it is in discontinuation status. However, it remains available through authorized distributors and Aetrix Electronics with verified inventory and traceable sourcing. Lifecycle availability coordination is supported for existing production programs. Customers designing new systems should evaluate alternatives like MJD127G or newer high-efficiency PNP transistors, but the 2N6107 continues to serve maintenance, repair, and legacy upgrade needs where TO-220 form factor and proven reliability are mandatory.