Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi 2N6109

Part No.:
2N6109
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
Aetrix2N6109.pdf
Description:
TRANS PNP 50V 7A TO-220
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,169

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

2N6109 from onsemi is a PNP silicon power transistor in TO-220 package, rated for 50 VCEO, 7 A continuous collector current, and 40 W total power dissipation at TC = 25°C. It delivers hFE ≥ 30 at IC = 2.5 A, VCE = 4 V, and fT = 10 MHz, suited for medium-power linear amplification and switching in industrial control power stages.

For engineers reviewing the 2N6109 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, 50 V VCEO rating, 7 A IC capability, TO-220 thermal resistance (RJC = 3.125°C/W), and complementary pairing with 2N6107/2N6111 in power amplifier designs.

Technical Context

The 2N6109 operates as a medium-power PNP bipolar junction transistor optimized for linear and saturated switching modes. Its DC current gain (hFE) is specified at 2.5 A collector current, and it supports high-frequency operation up to 10 MHz fT, enabling use in audio and switching regulators where bandwidth and gain stability matter.

Thermal design is constrained by RJC = 3.125°C/W and a maximum junction temperature of +150°C. Safe operating area (SOA) curves confirm thermal-limited conduction up to 7 A at low VCE, with secondary breakdown limiting pulse operation above 10 V and 3 A under short-duration conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO50 V - Maximum collector-emitter voltage before breakdown under open-base conditions; defines safe DC voltage swing in amplifier output stages.
IC (continuous)7.0 A - Continuous collector current limit at TC = 25°C; sets maximum steady-state load drive capability.
PD40 W - Total power dissipation at case temperature 25°C; requires heatsinking for sustained operation above ~10 W.
hFE≥30 - DC current gain at IC = 2.5 A, VCE = 4 V; ensures predictable base drive requirements in Class-A/B amplifiers.
fT10 MHz - Current gain-bandwidth product at IC = 500 mA; supports stable operation in audio-frequency amplifiers and PWM switching up to ~1 MHz.
RJC3.125 °C/W - Junction-to-case thermal resistance; determines minimum heatsink thermal resistance needed to maintain TJ ≤ 150°C.

Pinout & Package

2N6109 uses the standard TO-220 (Case 221A, Style 1) package with 4 leads: pins 1 (Base), 3 (Emitter), and 2 & 4 (Collector, internally connected). Mounting tab is Collector.

Pin/TerminalCircuit RoleDesign Meaning
1BaseControl terminal for forward-biased PNP operation; requires negative bias relative to emitter to turn on.
2 & 4CollectorHigh-current output terminal; electrically common and connected to metal tab for thermal and electrical grounding.
3EmitterReference terminal for base drive and current return path; typically tied to positive rail in PNP switch configurations.

Key Features

FeatureDesign Value
High DC current gainhFE ≥ 30 at IC = 2.5 A enables efficient base drive with minimal quiescent current in linear amplifiers.
High fT10 MHz bandwidth supports stable audio-frequency amplification and fast switching in SMPS feedback paths.
TO-220 compact packageStandardized mechanical footprint allows drop-in replacement in legacy PCB layouts and compatibility with off-the-shelf heatsinks.
Pb-free & RoHS compliantG-suffix marking confirms lead-free termination and compliance with EU RoHS Directive 2011/65/EU for environmentally regulated production.

Applications

Audio Power Amplifier Output StageIndustrial DC Motor Driver

Use Scenario: Final push-pull stage in 10–20 W Class-AB audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: PNP complement to NPN output transistors (e.g., 2N6292), delivering negative half-cycle current with matched gain and SOA.

Use Value: 50 V VCEO and 7 A IC support ±25 V rails and dynamic speaker loads without clipping or thermal runaway.

Use Scenario: H-bridge low-side or high-side switch controlling 12–24 V brushed DC motors in PLC I/O modules.

IC Role / Device Role / Timing Role: Medium-power PNP switch turning on motor supply rails or sinking current during braking.

Use Value: 40 W power handling and 3.125°C/W RJC allow direct mounting to chassis for reliable 5–10 A intermittent motor current control.

Linear Voltage Regulator Pass ElementPower Supply Overcurrent Protection

Use Scenario: Series pass transistor in adjustable 3–15 V, 3–5 A linear regulators for test equipment power supplies.

IC Role / Device Role / Timing Role: Adjustable current-limiting series element controlled by error amplifier feedback loop.

Use Value: Stable hFE ≥ 30 across 1–5 A ensures precise current mirroring and thermal foldback response.

Use Scenario: Crowbar or foldback limiter in lab bench PSUs protecting against short-circuited outputs.

IC Role / Device Role / Timing Role: Fast-turn-on PNP shunt switch triggered by overcurrent sense circuit to clamp output voltage.

Use Value: 10 MHz fT and sub-μs switching times enable response within 10 μs to fault events, minimizing downstream damage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD127GTO-252 (DPAK) surface-mount package; VCEO = 100 V, IC = 5 A, hFE = 20–100 at IC = 2 ALower power (25 W), higher voltage rating; not pin-compatible; requires PCB redesign for SMT assemblyPreferred for space-constrained, automated SMT designs needing >50 V headroom but lower current.
BD139TO-126 package; VCEO = 80 V, IC = 1.5 A, hFE = 40–250 at IC = 0.5 A; no Pb-free markingLower current and power (12.5 W); smaller package limits heatsinking; non-RoHS variant may restrict use in EU marketsAcceptable for low-power audio preamps or signal-level switching where 7 A capability is unnecessary.

Compared with MJD127G and BD139, the 2N6109 provides higher continuous current (7 A vs. 5 A/1.5 A) and proven TO-220 thermal performance (40 W @ 25°C), making it optimal for through-hole industrial power stages requiring robust heatsink coupling and regulatory compliance.

Availability

2N6109 is available at Aetrix Electronics and suitable for industrial motor drives, audio power amplifiers, and linear voltage regulators requiring stable component supply and long-term manufacturability.

Supply support for 2N6109 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N6109 belongs to onsemi's legacy complementary silicon power transistor family designed for general-purpose amplifier and switching applications, emphasizing ruggedness, thermal reliability, and compatibility with established TO-220-based power designs.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6109?

The 2N6109 has a maximum collector-emitter sustaining voltage (VCEO(sus)) of 50 Vdc under specified test conditions (IC = 100 mAdc, IB = 0). This rating defines the upper limit for safe DC operation in amplifier output stages or switching circuits without risking avalanche breakdown. Exceeding this voltage risks irreversible device failure, especially at elevated temperatures or with inductive loads.

Is the 2N6109 a PNP or NPN transistor?

2N6109 is a PNP bipolar junction transistor. Its complementary NPN counterparts in the same family include 2N6288 and 2N6292. The PNP configuration means current flows from emitter to collector when the base is biased negatively relative to the emitter, making it suitable for high-side switching and complementary push-pull amplifier topologies where it pairs directly with NPN devices.

What package type does the 2N6109 use, and is it RoHS compliant?

The 2N6109 uses the TO-220 package (Case 221A, Style 1) with four leads and an electrically active metal tab connected to the collector. It is marked with a "G" suffix (e.g., 2N6109G), confirming it is Pb-free and compliant with the EU RoHS Directive 2011/65/EU. This makes the 2N6109 suitable for environmentally regulated production environments without requiring special soldering profiles beyond standard lead-free reflow guidelines.

What is the DC current gain (hFE) specification for the 2N6109?

The 2N6109 has a minimum DC current gain (hFE) of 30 when tested at IC = 2.5 Adc and VCE = 4.0 Vdc. This value reflects typical small-signal amplification capability in linear operation and informs base resistor sizing in switching applications. Gain varies with temperature and current - it decreases at higher IC and increases slightly at elevated junction temperatures - so designs should verify margin across operating conditions using the full hFE curve in the datasheet.

Can the 2N6109 be used in switching applications, and what is its typical switching speed?

Yes, the 2N6109 is qualified for switching applications, with documented turn-on time (tr) and turn-off time (ts) in the datasheet's Figures 3 and 6. At IC/IB = 10 and VCC = 30 V, turn-on delay and rise time fall within the microsecond range, supporting PWM frequencies up to several hundred kHz. Its 10 MHz fT and low Cob (≤250 pF) further support reliable high-speed switching in power converters and motor drivers where gain-bandwidth and capacitance affect loop stability.

2N6109 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
7 A
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 3A, 7A
Current - Collector Cutoff (Max):
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 2.5A, 4V
Power - Max:
40 W
Frequency - Transition:
10MHz
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220

2N6109 FAQ

1.How can I place an order for 2N6109 through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6109 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6109 reliable?

The price and inventory of 2N6109 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6109 is usually 5 days.

3.What payment methods are accepted for 2N6109?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6109 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6109?

2N6109 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6109 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6109?

For technical support, including 2N6109 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6109 requirements.

6.How does Aetrix verify that 2N6109 is sourced from the original manufacturer or authorized distributors?

All 2N6109 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6109 meets industry standards.

7.What is the process for return or replacement of 2N6109?

All 2N6109 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6109, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6109 part is unused and in its original packaging.

Return procedure for 2N6109:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

2N6109 Tags

  • 2N6109
  • 2N6109 PDF
  • 2N6109 Datasheet
  • 2N6109 Specifications
  • 2N6109 Images
  • onsemi
  • onsemi 2N6109
  • Buy 2N6109
  • 2N6109 Price
  • 2N6109 Distributor
  • 2N6109 Supplier
  • 2N6109 Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER