onsemi 2N6109G

Overview

2N6109G from onsemi is a PNP silicon power transistor in TO-220 package, rated for 50 V_CEO, 7 A continuous collector current, and 40 W total power dissipation at T_C = 25°C. It delivers h_FE ≥ 30 at I_C = 2.5 A, V_CE = 4 V, and f_T = 10 MHz, making it suitable for medium-power linear amplification and switching in industrial power supplies and motor control stages.

For engineers reviewing the 2N6109G datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, 50 V V_CEO rating, 7 A I_C capability, thermal resistance of 3.125°C/W, and Pb-free TO-220 packaging - all critical for thermal management and DC/low-frequency switching designs.

Technical Context

The 2N6109G operates as a medium-power PNP bipolar junction transistor with fixed-emitter biasing topology. Its safe operating area (SOA) is defined up to 50 V and 7 A under single-pulse conditions at T_C = 25°C, bounded by thermal and secondary breakdown limits.

It exhibits V_CE(sat) ≤ 3.5 V at I_C = 7 A and I_B = 3 A, and V_BE(on) ≤ 3.0 V under same conditions. Dynamic performance includes f_T = 10 MHz and C_ob = 250 pF, supporting stable operation in audio-frequency amplifiers and relay drivers.

Key Specifications

Pinout & Package

2N6109G uses the TO-220 package (Case 221A, Style 1), with metal tab electrically connected to collector. Mounting requires insulated hardware due to collector-to-tab continuity.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD127G and BD241C, the 2N6109G offers optimal balance of 50 V rating, 7 A current, 10 MHz f_T, and TO-220 thermal performance - making it preferred for cost-sensitive, through-hole, medium-power analog and switching applications where precise gain and bandwidth matter.

Availability

2N6109G is available at Aetrix Electronics and suitable for industrial power supplies, relay driver circuits, audio amplifier output stages, and DC motor control requiring stable component supply and long-term manufacturability support.

Supply support for 2N6109G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6109G belongs to onsemi's legacy complementary silicon power transistor family, designed specifically for robust, cost-effective linear amplification and switching in industrial and general-purpose equipment where reliability and thermal stability are essential.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6109G?

The 2N6109G has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 50 Vdc under specified test conditions (I_C = 100 mAdc, I_B = 0). This rating defines the absolute upper limit for voltage applied between collector and emitter with base open, and must not be exceeded to avoid device breakdown. The 2N6109G is part of a complementary series where 2N6107G is rated at 70 V and 2N6111G at 30 V.

Is the 2N6109G pin-compatible with other transistors in the 2N61xx family?

Yes, the 2N6109G shares identical TO-220 package pinout (Base–Collector–Emitter–Collector) with 2N6107G and 2N6111G, allowing direct PCB footprint reuse. However, electrical parameters differ: 2N6109G is rated for 50 V V_CEO, while 2N6107G is 70 V and 2N6111G is 30 V. Substituting across this family requires verification of voltage and gain requirements in the target circuit.

What is the thermal resistance junction-to-case for the 2N6109G?

The 2N6109G has a maximum thermal resistance of R_θJC = 3.125°C/W, measured from junction to case surface. This value is critical for calculating junction temperature rise (T_J = T_C + P_D × R_θJC) and selecting appropriate heatsinking. The metal tab is electrically connected to the collector, so electrical isolation must be maintained between tab and mounting surface unless collector is at system ground potential.

Does the 2N6109G support linear amplifier operation?

Yes, the 2N6109G is characterized for linear operation with h_FE ≥ 30 at I_C = 2.5 A and V_CE = 4 V, and its SOA curve (Figure 5) explicitly covers DC and pulse conditions up to 50 V and 7 A. Its f_T = 10 MHz and low C_ob = 250 pF support stable gain in audio-frequency amplifiers, though layout and bias stability must be verified per application.

What does the 'G' suffix in 2N6109G indicate?

The 'G' suffix in 2N6109G indicates a Pb-free (lead-free) package compliant with the EU RoHS Directive 2011/65/EU. It reflects onsemi's standardized marking convention where 'G' denotes RoHS-compliant termination and packaging materials. The 2N6109G retains identical electrical and thermal specifications as non-G variants but meets environmental compliance requirements for modern electronics manufacturing.