onsemi 2N6111
- Part No.:
- 2N6111
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
2N6111.pdf
- Description:
- TRANS PNP 30V 7A TO-220
- Quantity:
- Payment:

- Shipping:

Inventory:6,053
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Product details
Overview
2N6111 from onsemi is a PNP silicon power transistor in TO-220 package, rated for 30 VCEO, 7 A continuous collector current, and 40 W total power dissipation at TC = 25°C. It delivers hFE ≥ 30 at IC = 3.0 A, VCE = 4.0 V, and fT = 10 MHz, targeting high-current linear amplification and hard-switching applications in industrial power supplies and motor control stages.
For engineers reviewing the 2N6111 datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, 3.125°C/W junction-to-case thermal resistance, VCE(sat) ≤ 3.5 V at IC = 7.0 A/IB = 3.0 A, and compatibility with TO-220 heatsink mounting in thermally constrained designs.
Technical Context
The 2N6111 operates as a medium-power PNP bipolar junction transistor optimized for DC and low-frequency switching up to ~10 MHz fT. Its safe operating area (SOA) is defined by thermal limits (40 W @ 25°C, derated 0.32 W/°C above), secondary breakdown, and current saturation behavior - validated per JEDEC standards with pulse testing (≤300 µs, ≤2% duty cycle).
It features complementary NPN pairing with 2N6288 (same VCEO/IC/PD ratings), enabling push-pull amplifier topologies. Base-emitter voltage is specified at 3.0 V under full-load conduction (IC = 7.0 A, VCE = 4.0 V), confirming robust drive requirements for reliable saturation in high-current switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 30 Vdc - Maximum collector-emitter voltage before breakdown under open-base conditions; defines maximum supply rail compatibility in PNP switch configurations. |
| IC (cont.) | 7.0 Adc - Continuous collector current rating; supports load switching up to ~7 A with adequate heatsinking and derating. |
| PD @ TC=25°C | 40 W - Total power dissipation limit at case temperature 25°C; requires thermal interface design to maintain TJ ≤ 150°C. |
| hFE | ≥30 - DC current gain at IC = 3.0 A, VCE = 4.0 V; determines minimum base drive current (e.g., ~100 mA for 3 A output). |
| fT | 10 MHz - Current gain-bandwidth product at IC = 500 mA, VCE = 4.0 V; confirms suitability for audio-frequency amplification and PWM switching below 1 MHz. |
| RJC | 3.125 °C/W - Junction-to-case thermal resistance; enables calculation of ΔTJ−C = PD × RJC for thermal margin analysis. |
Pinout & Package
2N6111 uses the standard TO-220 (Case 221A, Style 1) plastic power package with metal tab connected to collector. Mounting hole allows mechanical attachment to heatsinks with electrical isolation if required.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; accepts forward bias current to turn on transistor; requires ≥3.0 V VBE(on) at full load. |
| 2 & 4 | Collector | Main current path input (for PNP); electrically tied to metal tab; must be isolated from heatsink unless common-collector configuration used. |
| 3 | Emitter | Main current path output (for PNP); typically connected to positive supply rail in high-side switch applications. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥ 30 at IC = 3.0 A ensures stable base drive design without excessive current sourcing from driver ICs. |
| High fT | 10 MHz bandwidth supports clean signal amplification up to audio frequencies and fast switching transitions in PWM circuits. |
| TO-220 compact package | Standardized footprint enables drop-in replacement in legacy power stage layouts and simplifies heatsink integration. |
| Pb-free & RoHS compliant | G-suffix marking confirms lead-free termination and compliance with environmental directives for industrial and commercial PCB assembly. |
Applications
| Industrial DC Motor Control | Linear Power Supply Regulator |
|---|---|
Use Scenario: High-side PNP switch controlling armature current in 24–30 V brushed DC motors with peak loads up to 7 A. IC Role / Device Role / Timing Role: Power switching element in emitter-follower configuration, driven by microcontroller GPIO through base resistor network. Use Value: VCEO = 30 V and IC = 7 A enable direct interface with common industrial bus voltages while maintaining SOA margins during stall conditions. | Use Scenario: Pass transistor in adjustable linear regulator delivering up to 5 A at 5–15 V output from unregulated 30 V input. IC Role / Device Role / Timing Role: Series pass element dissipating excess voltage as heat; operated in active region with feedback-controlled base bias. Use Value: 40 W power rating and 3.125°C/W RJC allow regulated output under worst-case dropout (25 V) with manageable thermal design using standard TO-220 heatsinks. |
| Audio Amplifier Output Stage | Relay/Contactor Driver |
Use Scenario: Complementary Class AB output stage (paired with 2N6288) delivering 10–20 W into 4–8 Ω speakers. IC Role / Device Role / Timing Role: PNP half of push-pull pair handling negative half-cycle current; biased for low crossover distortion. Use Value: fT = 10 MHz and hFE ≥ 30 ensure faithful reproduction of audio signals up to 20 kHz with minimal phase shift and gain compression. | Use Scenario: Driving 24 VDC coils of industrial relays or contactors requiring ≥5 A inrush current. IC Role / Device Role / Timing Role: Saturated switch turning coil on/off via microcontroller; base driven with current-limited resistor. Use Value: VCE(sat) ≤ 3.5 V at 7 A minimizes power loss during sustained on-state, reducing thermal stress in high-duty-cycle control logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127 | TO-252 (DPAK) surface-mount package; same VCEO = 30 V, IC = 8 A, but lower fT = 3 MHz and higher VCE(sat) = 4.0 V @ 8 A. | Requires PCB rework for SMT layout; less suitable for high-frequency amplification but acceptable for DC switching. | Select when board space is constrained and thermal management uses PCB copper rather than external heatsink. |
| BD139 | TO-126 package; lower VCEO = 80 V, IC = 1.5 A, PD = 12.5 W; hFE ≥ 25 @ 500 mA, fT ≈ 150 MHz. | Not interchangeable for 7 A loads; suited for pre-driver or low-power amplification stages upstream of 2N6111. | Select only as a preamplifier or level-shifting stage - not as a direct replacement for main power switching. |
Compared with MJD127 and BD139, the 2N6111 offers superior continuous current handling (7 A vs. 8 A/1.5 A) and thermal performance (RJC = 3.125°C/W) in through-hole TO-220 form, making it optimal for high-reliability, high-power linear and switching roles where heatsink mounting and serviceability are prioritized.
Availability
2N6111 is available at Aetrix Electronics and suitable for industrial motor control, linear power regulation, audio amplifier output stages, and relay/contact driver circuits requiring stable component supply and long-term manufacturability assurance.
Supply support for 2N6111 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, medical, and IoT applications.
The 2N6111 belongs to onsemi's legacy complementary silicon power transistor family designed for rugged, cost-effective general-purpose amplification and switching in industrial power electronics where reliability and thermal robustness are critical.
FAQ
What is the maximum collector-emitter voltage rating for the 2N6111?
The 2N6111 has a maximum collector-emitter voltage (VCEO) rating of 30 Vdc under open-base conditions. This value is confirmed in the Absolute Maximum Ratings table of the official onsemi datasheet (Rev. 12, June 2024) and defines the upper limit for safe operation in PNP switch or amplifier configurations. Exceeding this voltage risks avalanche breakdown and permanent device damage.
Is the 2N6111 suitable for use in linear regulator applications?
Yes, the 2N6111 is suitable for linear regulator applications as a series pass transistor. Its 40 W power dissipation rating at TC = 25°C, 3.125°C/W junction-to-case thermal resistance, and VCE(sat) ≤ 3.5 V at 7 A support stable operation under moderate dropout conditions. Designers must implement appropriate heatsinking and current-limiting protection, as outlined in Figure 5 (SOA curves) of the 2N6111 datasheet.
Does the 2N6111 have a Pb-free and RoHS-compliant package?
Yes, the 2N6111 is offered in a Pb-free and RoHS-compliant TO-220 package, indicated by the "G" suffix in the ordering code (e.g., 2N6111G). This is explicitly stated in the Features section and Ordering Information table of the onsemi datasheet, confirming compliance with environmental directives for commercial and industrial PCB assembly.
What is the DC current gain (hFE) specification for the 2N6111?
The 2N6111 has a minimum DC current gain (hFE) of 30, measured at IC = 3.0 Adc and VCE = 4.0 Vdc. This parameter is specified in the Electrical Characteristics table and reflects typical performance in saturated switching or active-region amplification. Actual hFE may vary across units and operating conditions, so designs should verify margin with worst-case base drive.
Can the 2N6111 be used in complementary pairs with NPN transistors?
Yes, the 2N6111 is explicitly designed for complementary operation with the NPN 2N6288, sharing identical VCEO = 30 V, IC = 7 A, and PD = 40 W ratings. The onsemi datasheet groups them as matched PNP/NPN pairs for push-pull amplifier and H-bridge driver topologies, ensuring balanced conduction characteristics and thermal behavior in symmetrical circuits.
2N6111 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 7 A
- Voltage - Collector Emitter Breakdown (Max):
- 30 V
- Vce Saturation (Max) @ Ib, Ic:
- 3.5V @ 3A, 7A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 30 @ 3A, 4V
- Power - Max:
- 40 W
- Frequency - Transition:
- 10MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
2N6111 FAQ
1.How can I place an order for 2N6111 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6111 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6111 reliable?
The price and inventory of 2N6111 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6111 is usually 5 days.
3.What payment methods are accepted for 2N6111?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6111 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6111?
2N6111 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6111 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6111?
For technical support, including 2N6111 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6111 requirements.
6.How does Aetrix verify that 2N6111 is sourced from the original manufacturer or authorized distributors?
All 2N6111 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6111 meets industry standards.
7.What is the process for return or replacement of 2N6111?
All 2N6111 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6111, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6111 part is unused and in its original packaging.
Return procedure for 2N6111:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N6111 Tags

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MMBT3906LT1G
onsemi

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Diodes Incorporated

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MMBT3904LT1G
onsemi

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MMBT3906-7-F
Diodes Incorporated

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MMBT3904-TP
Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
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MMBTA06LT1G
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