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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi 2N6111G

Name: 2N6111G
Brand: onsemi
SKU: 2N6111G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2N6111G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: 2N6111G.pdf

Description:: TRANS PNP 30V 7A TO-220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

2N6111G from onsemi is a PNP silicon power transistor in TO-220 package, rated for 30 V_CEO, 7.0 A continuous collector current, and 40 W power dissipation at T_C = 25°C. It delivers h_FE ≥ 30 at I_C = 3.0 A, V_CE = 4.0 V, and supports general-purpose amplifier and switching applications in industrial power supplies and motor control circuits.

For engineers reviewing the 2N6111G datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, 30 V V_CEO rating, 7.0 A I_C capability, TO-220 thermal resistance (R_JC = 3.125°C/W), and suitability for linear amplification or hard-switching duty with DC gain-bandwidth product f_T = 10 MHz.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for both linear amplification and saturated switching. Its design emphasizes high DC current gain (h_FE ≥ 30 at 3.0 A) and robust safe operating area (SOA) up to 7 A at 30 V under single-pulse conditions, with secondary breakdown limits validated per JEDEC standards.

Thermal performance is defined by R_JC = 3.125°C/W and a 40 W maximum power dissipation derated at 0.32 W/°C above 25°C case temperature. The device exhibits V_CE(sat) ≤ 3.5 V at I_C = 7.0 A / I_B = 3.0 A and V_BE(on) ≤ 3.0 V under same conditions, supporting reliable base drive design in discrete power stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	30 V - Maximum collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in PNP switch or amplifier stage.
I_C (continuous)	7.0 A - Continuous collector current handling capacity; sets maximum load current in power regulation or driver circuits.
P_D @ T_C = 25°C	40 W - Total power dissipation limit at case temperature 25°C; requires heatsinking for sustained operation above ~10 W.
h_FE	≥30 - DC current gain at I_C = 3.0 A, V_CE = 4.0 V; determines required base drive current for target collector current.
f_T	10 MHz - Current gain–bandwidth product at I_C = 500 mA; indicates usable frequency range for small-signal amplification.
R_JC	3.125°C/W - Junction-to-case thermal resistance; enables calculation of junction temperature rise under known power and heatsink conditions.

Pinout & Package

2N6111G is housed in a TO-220 plastic package (Case 221A, Style 1), with metal tab electrically connected to collector. The package provides mechanical mounting via the tab and supports conduction cooling when mounted to a heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal; accepts base current to modulate collector current flow; requires current-limiting resistor in most drive configurations.
2 & 4	Collector	Main current-carrying terminal tied to metal tab; must be electrically isolated from heatsink unless circuit design permits common collector connection.
3	Emitter	Current return path; typically connected to higher potential rail in PNP configurations; serves as reference for base-emitter biasing.

Key Features

Feature	Design Value
High DC current gain	h_FE ≥ 30 at I_C = 3.0 A ensures stable biasing and reduced base drive power in medium-current switching applications.
High f_T	10 MHz bandwidth supports audio-frequency amplification and fast switching transitions up to ~1 MHz with adequate gain margin.
TO-220 compact package	Standardized footprint and heatsink interface enable drop-in replacement and mechanical compatibility with existing PCB layouts.
Pb-free & RoHS compliant	G-suffix denotes lead-free termination and compliance with EU RoHS Directive 2011/65/EU, supporting environmentally regulated production.

Applications

Industrial Power Supply Regulation	DC Motor Speed Control
Use Scenario: Regulating output voltage in unregulated linear power supplies using series-pass configuration. IC Role / Device Role / Timing Role: PNP series pass transistor controlling current flow between input and output rails based on error amplifier feedback. Use Value: Delivers 7.0 A continuous current with V_CE(sat) ≤ 3.5 V, minimizing dropout and heat generation while maintaining stability across load transients.	Use Scenario: Driving brushed DC motors in industrial automation systems requiring bidirectional control via H-bridge complement. IC Role / Device Role / Timing Role: High-side PNP switch in half-bridge topology, enabling current sourcing to motor windings during forward conduction. Use Value: Supports 30 V rail operation and withstands 10 A peak collector current, accommodating motor startup surges without second-breakdown failure.
Audio Amplifier Output Stage	Relay Driver Circuit
Use Scenario: Complementary Class AB output stage in low-fidelity audio amplifiers where cost and thermal simplicity are prioritized. IC Role / Device Role / Timing Role: PNP output transistor delivering negative half-cycle current to speaker load, paired with NPN counterpart (e.g., 2N6288). Use Value: Provides h_FE ≥ 30 at 3.0 A and f_T = 10 MHz, ensuring sufficient gain and bandwidth for 20 Hz–20 kHz signal reproduction with low distortion.	Use Scenario: Driving high-current electromagnetic relays in PLC I/O modules requiring robust isolation and surge tolerance. IC Role / Device Role / Timing Role: Switching transistor interfacing microcontroller GPIO to relay coil, providing galvanic separation and current amplification. Use Value: Handles 7.0 A continuous coil current with V_BE(on) ≤ 3.0 V, simplifying base drive design and reducing MCU port loading in multi-relay systems.

Industrial Power Supply Regulation

DC Motor Speed Control

Use Scenario: Regulating output voltage in unregulated linear power supplies using series-pass configuration.

IC Role / Device Role / Timing Role: PNP series pass transistor controlling current flow between input and output rails based on error amplifier feedback.

Use Value: Delivers 7.0 A continuous current with V_CE(sat) ≤ 3.5 V, minimizing dropout and heat generation while maintaining stability across load transients.

Use Scenario: Driving brushed DC motors in industrial automation systems requiring bidirectional control via H-bridge complement.

IC Role / Device Role / Timing Role: High-side PNP switch in half-bridge topology, enabling current sourcing to motor windings during forward conduction.

Use Value: Supports 30 V rail operation and withstands 10 A peak collector current, accommodating motor startup surges without second-breakdown failure.

Audio Amplifier Output Stage

Relay Driver Circuit

Use Scenario: Complementary Class AB output stage in low-fidelity audio amplifiers where cost and thermal simplicity are prioritized.

IC Role / Device Role / Timing Role: PNP output transistor delivering negative half-cycle current to speaker load, paired with NPN counterpart (e.g., 2N6288).

Use Value: Provides h_FE ≥ 30 at 3.0 A and f_T = 10 MHz, ensuring sufficient gain and bandwidth for 20 Hz–20 kHz signal reproduction with low distortion.

Use Scenario: Driving high-current electromagnetic relays in PLC I/O modules requiring robust isolation and surge tolerance.

IC Role / Device Role / Timing Role: Switching transistor interfacing microcontroller GPIO to relay coil, providing galvanic separation and current amplification.

Use Value: Handles 7.0 A continuous coil current with V_BE(on) ≤ 3.0 V, simplifying base drive design and reducing MCU port loading in multi-relay systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	TO-252 (DPAK) surface-mount package; lower R_JC = 2.5°C/W; V_CEO = 100 V; I_C = 8 A; h_FE ≥ 20 at 4 A.	Designed for SMT assembly and higher-voltage switching; not pin-compatible with TO-220 footprint.	Select when board space is constrained and automated assembly is required; verify heatsink interface and layout adaptation.
BD139	TO-126 package; V_CEO = 80 V; I_C = 1.5 A; h_FE ≥ 25 at 500 mA; lower power rating (12.5 W).	Targeted at low-to-medium power linear amplifiers and signal switching; insufficient for 7 A loads.	Choose only for sub-1 A applications where cost and legacy design reuse outweigh current capacity needs.

Compared with MJD127G and BD139, the 2N6111G offers a balanced combination of 7.0 A current handling, 30 V rating, and TO-220 through-hole compatibility-making it suitable for serviceable, medium-power discrete designs where thermal management via bolt-on heatsinks is preferred over SMT thermal solutions.

Availability

2N6111G is available at Aetrix Electronics and suitable for industrial power supply regulation, DC motor speed control, audio amplifier output stages, and relay driver circuits requiring stable component supply and long-term manufacturability support.

Supply support for 2N6111G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6111G belongs to onsemi's legacy complementary silicon power transistor family, designed specifically for cost-sensitive, medium-power linear and switching applications where ruggedness, thermal reliability, and JEDEC-standard packaging are essential.

FAQ

What is the maximum collector-emitter voltage rating for the 2N6111G?

The 2N6111G has a maximum collector-emitter sustaining voltage (V_CEO(sus)) of 30 Vdc under specified test conditions (I_C = 100 mAdc, I_B = 0). This rating defines the upper voltage limit the device can block in open-base configuration and must not be exceeded in circuit design to prevent avalanche breakdown or permanent damage.

Is the 2N6111G suitable for switching applications?

Yes, the 2N6111G is explicitly designed for both general-purpose amplifier and switching applications. Its V_CE(sat) ≤ 3.5 V at I_C = 7.0 A / I_B = 3.0 A, combined with a 10 MHz f_T, supports efficient hard-switching in power converters and motor drivers up to several hundred kHz with appropriate base drive design.

What package type does the 2N6111G use, and how is the collector terminal connected?

The 2N6111G uses a TO-220 plastic package (Case 221A, Style 1), and pins 2 and 4 are internally connected to the collector and to the metal tab. This configuration requires electrical isolation of the tab from the heatsink unless the circuit design intentionally references the collector to chassis ground or another common node.

Does the 2N6111G meet RoHS requirements?

Yes, the "G" suffix in 2N6111G indicates a Pb-free package compliant with the EU RoHS Directive 2011/65/EU. The device contains no lead in its terminations and meets all restricted substance thresholds defined in the standard, making it suitable for environmentally regulated manufacturing environments.

What is the thermal resistance from junction to case for the 2N6111G?

The 2N6111G has a maximum thermal resistance from junction to case (R_JC) of 3.125°C/W. This value allows engineers to calculate junction temperature rise (ΔT_J = P_D × R_JC) under known power dissipation, enabling accurate thermal design when paired with a heatsink having known R_CS and R_SA.

2N6111G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 7 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 3.5V @ 3A, 7A

Current - Collector Cutoff (Max):: 1mA

DC Current Gain (hFE) (Min) @ Ic, Vce:: 30 @ 3A, 4V

Power - Max:: 40 W

Frequency - Transition:: 10MHz

Operating Temperature:: -65°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220

2N6111G FAQ

1.How can I place an order for 2N6111G through Aetrix?

Please submit a Request for Quotation (RFQ) for 2N6111G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2N6111G reliable?

The price and inventory of 2N6111G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6111G is usually 5 days.

3.What payment methods are accepted for 2N6111G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6111G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2N6111G?

2N6111G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2N6111G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2N6111G?

For technical support, including 2N6111G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6111G requirements.

6.How does Aetrix verify that 2N6111G is sourced from the original manufacturer or authorized distributors?

All 2N6111G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6111G meets industry standards.

7.What is the process for return or replacement of 2N6111G?

All 2N6111G units undergo pre-shipment inspection (PSI). If there is an issue with 2N6111G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2N6111G part is unused and in its original packaging.

Return procedure for 2N6111G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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