onsemi 2N6288G

Overview

2N6288G from onsemi is an NPN silicon power transistor in a TO-220 package, rated for 30 V_CEO, 7.0 A continuous collector current, and 40 W total power dissipation at T_C = 25°C. It delivers high DC current gain (h_FE ≥ 30 at I_C = 3.0 A), 4.0 MHz f_T, and supports general-purpose amplifier and switching applications in industrial motor drives and power supplies.

For engineers reviewing the 2N6288G datasheet, pinout, applications, or equivalent options, key selection criteria include its 30 V_CEO/40 W thermal capability, TO-220 mechanical compatibility, verified h_FE ≥ 30 at 3.0 A, and Pb-free RoHS-compliant construction - all critical for legacy-replacement and cost-sensitive linear/switching designs.

Technical Context

The 2N6288G operates as a medium-power NPN bipolar junction transistor with fixed-base control architecture. Its safe operating area (SOA) is defined up to 150°C junction temperature, with secondary breakdown limits validated for single-pulse operation at ≤10% duty cycle. Thermal resistance R_JC is 3.125°C/W, enabling predictable heatsink sizing.

Electrical behavior is characterized under JEDEC-standard test conditions: DC parameters measured at T_C = 25°C, dynamic f_T tested at I_C = 500 mA, V_CE = 4.0 V, and f = 1.0 MHz. Saturation voltage V_CE(sat) ≤ 3.5 V is specified at I_C = 7.0 A and I_B = 3.0 A, confirming suitability for hard-switched load control.

Key Specifications

Pinout & Package

2N6288G uses the standard TO-220 package (Case 221A, Style 1), with metal tab electrically connected to collector. Mounting hole allows mechanical fixation and thermal conduction to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD127G and 2N3055G, the 2N6288G offers optimal balance of 30 V/7 A rating, TO-220 compatibility, and 40 W dissipation - making it preferred for mid-power industrial switching where pinout retention and thermal predictability are essential.

Availability

2N6288G is available at Aetrix Electronics and suitable for industrial motor control, DC power supply regulation, relay/solenoid driving, and audio output stages requiring stable component supply across long-lifecycle embedded programs.

Supply support for 2N6288G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The 2N6288G belongs to onsemi's legacy complementary silicon power transistor family, designed specifically for cost-sensitive, medium-power linear and switching applications where reliability, thermal performance, and TO-220 interoperability are prioritized over ultra-high speed or integration.

FAQ

What is the maximum junction temperature for the 2N6288G?

The 2N6288G has an operating junction temperature range of −65°C to +150°C. This maximum rating is referenced in the Absolute Maximum Ratings table and confirmed in the Safe Operating Area (SOA) curves. Thermal design must ensure that under worst-case power dissipation and ambient conditions, the actual junction temperature does not exceed +150°C to maintain reliability and prevent second breakdown. The 2N6288G datasheet specifies this limit explicitly for both continuous and pulsed operation.

Is the 2N6288G pin-compatible with other TO-220 NPN transistors like the 2N3055?

No, the 2N6288G is not pin-compatible with the 2N3055. While both use TO-220 packages, the 2N6288G follows the standard TO-220 pinout (Base–Collector–Emitter–Collector), whereas the 2N3055 uses a different pin assignment (Base–Collector–Emitter). Substituting them without verifying pin mapping risks incorrect biasing or short-circuit conditions. Always confirm pinout diagrams from official onsemi documentation before using the 2N6288G as a replacement.

Does the 2N6288G support switching at frequencies above 100 kHz?

The 2N6288G is not optimized for switching above 100 kHz. Its f_T is 4.0 MHz, but practical switching speed is limited by stored charge and minority carrier lifetime. Turn-on and turn-off time data in the datasheet show microsecond-scale delays under typical test conditions (e.g., t_r, t_f ≤ 10 ns only with ideal drive). For reliable operation beyond 50 kHz, gate-drive optimization and snubbing are required - and MOSFETs are generally preferred for high-frequency switching. The 2N6288G is best applied in <50 kHz linear or PWM applications.

What is the meaning of the 'G' suffix in 2N6288G?

The 'G' suffix in 2N6288G denotes a Pb-free (lead-free) and RoHS-compliant package per onsemi's marking convention. It confirms that the device meets EU Directive 2011/65/EU requirements and uses matte tin plating on leads. This designation appears in the Marking Diagram section and Ordering Information table of the official 2N6288G datasheet. No functional or electrical differences exist between G-suffix and non-G versions - only environmental compliance differs.

Can the 2N6288G be used in parallel configurations for higher current handling?

Yes, the 2N6288G can be operated in parallel, but only with external emitter resistors (typically 0.1–0.5 Ω) to ensure current sharing. Its positive temperature coefficient of V_BE(on) provides inherent thermal stability, but mismatched h_FE and thermal gradients between devices require careful layout and individual emitter degeneration. Parallel use is documented in onsemi application notes for power transistor arrays; however, derating of total current by ≥20% is recommended to account for parameter spread and thermal coupling.