onsemi 2N6338G

Overview

2N6338G from onsemi is a high-power NPN silicon transistor designed for industrial-military power amplifier and switching circuit applications, featuring VCEO(sus) = 100 Vdc (min), hFE = 30–120 @ IC = 10 Adc, VCE(sat) = 1.0 Vdc (max) @ IC = 10 Adc, tr = 0.3 μs (max), and θJC = 0.875 °C/W.

For engineers reviewing the 2N6338G datasheet, pinout, applications, or equivalent options, this device is selected for high-current linear amplification, hard-switching power control, thermal-stable DC-DC stage design, and ruggedized industrial motor drive output stages where sustained 25 A collector current and 200 W dissipation at TC = 25°C are required.

Technical Context

The 2N6338G operates as a single-element NPN bipolar junction transistor with base-emitter forward bias enabling controlled collector current conduction up to 25 Adc continuous and 50 Adc peak. Its sustaining voltage rating of 100 Vdc supports operation in medium-voltage DC bus environments such as industrial SMPS and servo amplifier outputs.

Thermal performance is defined by a maximum junction-to-case thermal resistance of 0.875 °C/W and an operating junction temperature range from –65°C to +200°C, enabling reliable use in high-ambient, conduction-cooled chassis-mount configurations without forced airflow.

Key Specifications

Pinout & Package

2N6338G is housed in a TO-204AA (TO-3) metal-can package with case acting as the collector terminal. The package features two leads: Pin 1 is Base, Pin 2 is Emitter. Mounting requires electrically isolated hardware due to collector-isolation constraints.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2N6338 and MJ15003G, the 2N6338G uniquely balances RoHS compliance, 100 Vdc sustain capability, and sub-microsecond switching for cost-sensitive industrial power stages where thermal management relies on direct case mounting.

Availability

2N6338G is available at Aetrix Electronics and suitable for industrial motor drives, high-current linear amplifiers, switched-mode power supplies, and ruggedized solenoid/lamp control systems requiring stable component supply and long-term obsolescence mitigation.

Supply support for 2N6338G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6338G belongs to onsemi's legacy high-power discrete transistor family, engineered for reliability in harsh-environment industrial and military applications where thermal stability, voltage margin, and long-lifecycle support are critical.

FAQ

What is the maximum continuous collector current rating for the 2N6338G?

The 2N6338G has a maximum continuous collector current (IC) rating of 25 Adc at TC = 25°C. This rating assumes proper heatsinking and derating per the published power derating curve - at 100°C case temperature, usable power drops to approximately 100 W, limiting sustainable current to ~14 A under steady-state conditions. The 2N6338G datasheet confirms this value in the Maximum Ratings table and supports it with SOA curves up to 1 ms pulse width.

Is the 2N6338G pin-compatible with the 2N6341G?

No, the 2N6338G is not pin-compatible with the 2N6341G despite sharing the TO-204AA package. While both use the same mechanical outline and pin numbering (Pin 1 = Base, Pin 2 = Emitter, Case = Collector), their electrical characteristics differ significantly: the 2N6341G specifies VCEO(sus) = 150 Vdc (vs. 100 Vdc for 2N6338G) and hFE = 12 (min) @ IC = 25 Adc (vs. 12 min at same condition for 2N6338G). Substitution requires verification of voltage margin and gain stability in the target circuit.

What is the thermal resistance junction-to-case for the 2N6338G?

The 2N6338G has a maximum thermal resistance of θJC = 0.875 °C/W, measured from junction to case under specified test conditions. This value is confirmed in the Thermal Characteristics section of the official onsemi datasheet and applies to the TO-204AA package with standard mounting pressure and thermal interface material. It enables accurate junction temperature estimation using TJ = TC + (PD × θJC) for layout thermal modeling.

Does the 2N6338G support linear (Class A/AB) operation?

Yes, the 2N6338G is explicitly characterized for linear operation, with hFE data provided at IC = 0.5 A, 10 A, and 25 A under VCE = 2.0 Vdc bias, and SOA curves covering DC and pulsed conditions up to 200°C junction temperature. Its fT = 40 MHz and low VCE(sat) support stable gain and low distortion in high-current audio and instrumentation amplifier output stages when properly biased and heatsinked.

What is the safe operating area (SOA) limit for the 2N6338G at DC operation?

At DC operation and TJ = 200°C, the 2N6338G's Active Region SOA limits are defined by thermal constraints: up to 25 A at VCE ≤ 4 V, 10 A at VCE ≤ 20 V, and 5 A at VCE ≤ 40 V. These boundaries are plotted in Figure 5 of the onsemi datasheet and reflect bonding-wire and thermally limited regions - exceeding them risks second breakdown or metallization failure. Derating is required above TC = 25°C per the published power derating curve.