onsemi 2N6341G

Overview

2N6341G from onsemi is a high-power NPN silicon transistor designed for industrial-military power amplifier and switching circuit applications, featuring VCEO(sus) = 150 Vdc (min), IC = 25 Adc continuous, and VCE(sat) = 1.0 Vdc (max) at IC = 10 Adc - used in motor drive output stages and DC-DC converter main switches.

For engineers reviewing the 2N6341G datasheet, pinout, applications, or equivalent options, key selection criteria include sustaining voltage margin, saturation voltage under high-current switching, thermal resistance (θJC = 0.875°C/W), and TO-204AA mechanical compatibility in high-reliability power systems.

Technical Context

This device operates as a single-element NPN bipolar junction transistor with base-emitter forward bias control of collector current. It supports linear amplification up to fT = 40 MHz and fast switching with tr ≤ 0.3 μs, ts ≤ 1.0 μs, and tf ≤ 0.25 μs at IC = 10 Adc under defined test conditions (VCC ≈ 80 Vdc, IB1 = IB2 = 1.0 Adc).

Its safe operating area (SOA) is thermally limited at TC = 25°C for single-pulse operation and second-breakdown constrained below rated VCEO. The device exhibits hFE = 30–120 at IC = 10 Adc and minimum hFE = 12 at IC = 25 Adc, confirming usable gain in high-current saturation regions.

Key Specifications

Pinout & Package

2N6341G is housed in a TO-204AA (TO-3) metal-can package with case-isolated collector, compliant with JEDEC CASE 1-07. Mounting requires insulating washer when case is not electrically tied to system ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with 2N6341 (non-Pb-free) and MJ15003G (higher-voltage, lower-gain alternative), the 2N6341G delivers optimal balance of RoHS compliance, 150 V sustain voltage, 25 A current capability, and 0.875°C/W thermal resistance - making it preferred for new industrial switching designs where regulatory and thermal constraints coexist.

Availability

2N6341G is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, welder controls, and high-reliability linear amplifiers requiring stable component supply across extended production lifecycles.

Supply support for 2N6341G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6341G belongs to onsemi's legacy high-power bipolar transistor product line, engineered for ruggedized industrial-military power switching and amplification where reliability, thermal robustness, and JEDEC-standard validation are mandatory.

FAQ

What is the maximum continuous collector current rating for the 2N6341G?

The 2N6341G has a maximum continuous collector current (IC) rating of 25 Adc at TC = 25°C. Derating is required above 25°C per the thermal resistance θJC = 0.875°C/W, and the device supports 50 Adc peak current for short-duration pulses. This rating is validated under JEDEC test conditions and applies directly to the 2N6341G part number as specified in the official onsemi datasheet Rev. 13.

Does the 2N6341G have a Pb-free package, and what is its package type?

Yes, the 2N6341G uses a Pb-free TO-204AA (TO-3) metal-can package, designated in the ordering information as "(Pb−Free)" and conforming to RoHS Directive 2011/65/EU. Its mechanical outline matches JEDEC CASE 1−07, with Pin 1 = Base, Pin 2 = Emitter, and the case serving as the Collector terminal - a configuration confirmed in the official onsemi package drawing.

What is the collector-emitter sustaining voltage (VCEO(sus)) specification for the 2N6341G?

The 2N6341G has a minimum collector-emitter sustaining voltage VCEO(sus) of 150 Vdc, tested at IC = 50 mAdc and IB = 0. This parameter is JEDEC-registered and distinguishes it from the 2N6338G (100 Vdc min). The 150 Vdc rating enables reliable operation in 120 VAC-derived supplies and 100 VDC bus systems with margin for transients - a value explicitly assigned to the 2N6341G in the onsemi datasheet.

How does the DC current gain (hFE) of the 2N6341G vary with collector current?

The 2N6341G exhibits hFE = 30–120 at IC = 10 Adc and VCE = 2.0 Vdc, and a minimum hFE = 12 at IC = 25 Adc under the same VCE condition. This gain compression at high current is documented in the "ON CHARACTERISTICS" table of the official datasheet and confirms usable linear control up to 10 A, with predictable saturation behavior beyond that - critical for base drive sizing in the 2N6341G.

What are the switching time specifications for the 2N6341G, and under what conditions are they measured?

The 2N6341G has rise time tr ≤ 0.3 μs, storage time ts ≤ 1.0 μs, and fall time tf ≤ 0.25 μs, all measured at IC = 10 Adc, VCC ≈ 80 Vdc, IB1 = IB2 = 1.0 Adc, and TJ = 25°C. These values are defined in the "SWITCHING CHARACTERISTICS" section of the onsemi datasheet and reflect performance in hard-switched configurations - essential for evaluating 2N6341G suitability in PWM power stages.