onsemi 2N6490G

Overview

2N6490G from onsemi is a PNP silicon power transistor in TO-220 package, rated for 60 V_CEO, 15 A continuous collector current, and 75 W power dissipation at T_C = 25°C. It delivers DC current gain (h_FE) ≥20 at I_C = 5 A and exhibits V_CE(sat) ≤1.3 V under same conditions. It is used in high-current linear amplifiers and industrial switching circuits requiring robust thermal performance and Pb-free compliance.

For engineers reviewing the 2N6490G datasheet, pinout, applications, or equivalent options, key selection criteria include its PNP polarity, TO-220 thermal resistance (R_JC = 1.67°C/W), safe operating area limits up to 150°C junction temperature, and verified performance in motor drive base circuits and DC-DC converter output stages.

Technical Context

This PNP bipolar junction transistor operates with emitter-base forward bias and collector-emitter reverse-active or saturation-mode conduction. Its design supports high-current switching with guaranteed h_FE ≥5.0 at I_C = 15 A and f_T ≥5.0 MHz at I_C = 1.0 A, enabling use in audio amplification and pulse-width modulated power control.

Thermal management is defined by R_JA = 70°C/W (free-air) and R_JC = 1.67°C/W (case-mounted), with derating starting above 25°C. Safe operating area curves confirm second-breakdown-limited operation up to 5 ms pulses at V_CE = 40 V and I_C = 10 A, validated per JEDEC registered data.

Key Specifications

Pinout & Package

2N6490G uses the TO-220 (Case 221A, Style 1) plastic package with three leads: Pin 1 = Base, Pin 2 = Collector, Pin 4 = Collector (dual-collector tab), Pin 3 = Emitter. The metal tab is electrically connected to the collector and must be isolated from chassis ground unless circuit topology requires common-collector reference.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Compared with MJD44H11G and BD249C, the 2N6490G uniquely balances 60 V rating, 15 A capacity, and TO-220 thermal performance-making it optimal for industrial 48 V switching and audio amplifiers where both voltage margin and heatsink efficiency are critical.

Availability

2N6490G is available at Aetrix Electronics and suitable for industrial motor control, audio power amplification, and linear voltage regulation requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for 2N6490G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6490G belongs to onsemi's legacy silicon power transistor family designed for rugged, high-reliability linear and switching applications in industrial controls, power supplies, and audio systems.

FAQ

What is the maximum junction temperature for the 2N6490G?

The 2N6490G has an operating junction temperature range of −65°C to +150°C. This maximum rating is validated per JEDEC standards and defines the upper thermal limit for reliable operation. Exceeding +150°C risks permanent degradation of h_FE, increased leakage, and bond-wire failure. Thermal design must ensure T_J remains within this bound using the published R_JC = 1.67°C/W and R_JA = 70°C/W values.

Is the 2N6490G pin-compatible with the 2N6491G?

No, the 2N6490G and 2N6491G are not pin-compatible. Both are PNP transistors in TO-220 packages, but the 2N6491G is rated for V_CEO = 80 V and V_CB = 90 V, while the 2N6490G is rated for V_CEO = 60 V and V_CB = 70 V. Their electrical characteristics differ significantly at high voltage, and substitution requires verification of SOA curves and thermal derating under actual operating conditions.

Does the 2N6490G require a heatsink in all applications?

Yes, the 2N6490G requires a heatsink whenever power dissipation exceeds ~1.8 W at ambient temperature (T_A = 25°C), based on its R_JA = 70°C/W rating. At full 75 W dissipation, a heatsink capable of maintaining T_C ≤25°C is mandatory. Even at 5 A collector current with V_CE = 2 V (10 W), thermal rise exceeds safe limits without heatsinking-verified by the derating curve in Figure 1 of the datasheet.

What is the typical base-emitter on voltage for the 2N6490G?

The 2N6490G exhibits V_BE(on) = 1.3 V (max) at I_C = 5.0 A and V_CE = 4.0 V, and up to 3.5 V (max) at I_C = 15 A under same conditions. These values reflect forward-biased PNP junction behavior and directly impact base drive circuit design-especially in saturated-switch applications where sufficient base current (I_B ≥ I_C/10) must be supplied to maintain low V_CE(sat).

Can the 2N6490G be used in avalanche mode?

No, the 2N6490G is not rated or characterized for avalanche operation. Its datasheet specifies only V_CEO(sus) = 60 V under pulsed conditions and does not provide avalanche energy (E_AS) ratings, ruggedness curves, or test conditions for repetitive avalanche. Using it beyond V_CEO risks uncontrolled breakdown, localized heating, and irreversible damage-consistent with standard bipolar transistor limitations.