onsemi 2N6491
- Part No.:
- 2N6491
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3
- Datasheet:
-
2N6491.pdf
- Description:
- TRANS PNP 80V 15A TO-220
- Quantity:
- Payment:

- Shipping:

Inventory:7,373
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Product details
Overview
2N6491 from onsemi is a PNP silicon power transistor in TO-220 package, rated for 80 VCEO, 15 A continuous collector current, and 75 W power dissipation at TC = 25°C. It delivers DC current gain (hFE) ≥5.0 at 15 A and supports switching and linear amplifier applications in industrial motor controls and power supplies.
For engineers reviewing the 2N6491 datasheet, pinout, applications, or equivalent options, key selection criteria include VCEO = 80 V, IC = 15 A, RJC = 1.67 °C/W, fT = 5.0 MHz, and TO-220 thermal performance under forced-air or heatsink-mounted conditions.
Technical Context
The 2N6491 operates as a medium-power PNP bipolar junction transistor with complementary pairing to NPN devices 2N6487/2N6488. Its safe operating area (SOA) is second-breakdown limited up to 5 ms pulses and thermally limited at case temperatures above 25°C, with derating slope of 0.6 W/°C.
Electrical behavior is characterized by VCE(sat) ≤ 3.5 V at IC = 15 A / IB = 5.0 A, VBE(on) ≤ 3.5 V under same conditions, and Cob ≈ 700 pF at VCB = 10 V - parameters critical for snubber design and switching loss estimation in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | 80 Vdc - Maximum collector-emitter voltage before breakdown under open-base condition; defines upper rail limit in high-side switch designs. |
| IC Continuous | 15 Adc - Sustained collector current capability with adequate heatsinking; sets minimum heatsink requirement for 75 W conduction loss. |
| PD @ TC = 25°C | 75 W - Total power dissipation limit at case temperature 25°C; requires thermal interface and heatsink design targeting RJA ≤ 70 °C/W. |
| hFE @ IC = 15 A | ≥5.0 - Minimum DC current gain at full rated current; determines required base drive current (IB ≥ 3 A) for saturation. |
| fT | 5.0 MHz - Current-gain bandwidth product at IC = 1.0 A; indicates usable frequency range for small-signal amplification or moderate-speed switching. |
| RJC | 1.67 °C/W - Junction-to-case thermal resistance; enables calculation of junction temperature rise ΔTJ = PD × 1.67 for reliability margining. |
Pinout & Package
2N6491 uses TO-220 package (Case 221A, Style 1), with metal tab electrically connected to collector. The plastic body provides electrical isolation between collector and mounting surface when insulated hardware is used.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Base | Control terminal; requires ≥3 A DC base current to saturate at IC = 15 A per hFE min spec. |
| 2 & 4 | Collector | Main high-current path; pins 2 and 4 are internally bonded to collector; metal tab is also collector - must be isolated or grounded per circuit function. |
| 3 | Emitter | Current return path; common reference for base drive and load connection in high-side switch configurations. |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥20 at IC = 5.0 A - reduces base drive power and simplifies driver stage design in linear regulators. |
| High fT | 5.0 MHz - supports audio-frequency amplification and PWM switching up to ~500 kHz with acceptable gain roll-off. |
| TO-220 compact package | Standardized footprint with 2.54 mm pin pitch - enables drop-in replacement in legacy PCBs designed for TO-220 power transistors. |
| Pb-free & RoHS compliant | G-suffix marking - meets environmental compliance requirements for industrial and consumer end equipment without lead content. |
Applications
| Industrial Motor Control | DC Power Supply Regulation |
|---|---|
Use Scenario: High-side switching in 24–48 V brushed DC motor H-bridge drivers. IC Role / Device Role / Timing Role: PNP power switch controlling motor voltage rail; operates in saturation during ON state and cutoff during OFF state. Use Value: 80 VCEO rating accommodates back-EMF spikes; 15 A current supports motors up to ~700 W mechanical output with appropriate heatsinking. |
Use Scenario: Series pass element in linear regulated DC power supplies delivering up to 12 V @ 10 A. IC Role / Device Role / Timing Role: Voltage-controlled current source regulating output via base bias; dissipates heat proportional to (VIN − VOUT) × ILOAD. Use Value: 75 W power rating allows operation at 10 A with 7.5 V dropout; RJC = 1.67 °C/W enables predictable thermal design using standard TO-220 heatsinks. |
| AC-DC SMPS Auxiliary Supply | Overcurrent Protection Circuit |
Use Scenario: Discrete transistor in auxiliary bias winding rectifier stage of off-line flyback converters. IC Role / Device Role / Timing Role: Synchronous rectifier or linear regulator for control IC bias supply; handles peak currents during startup surge. Use Value: VCEO = 80 V withstands reflected flyback voltage spikes; low VCE(sat) minimizes conduction loss in low-voltage bias rails. |
Use Scenario: Current-limiting switch in battery protection or lab power supply foldback circuits. IC Role / Device Role / Timing Role: Fast-acting crowbar or shutdown switch triggered by comparator output during overcurrent fault. Use Value: 5.0 MHz fT ensures sub-microsecond turn-off response; SOA curves validate reliable operation under short-circuit pulse stress up to 5 ms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD44H11G | Higher VCEO = 100 V, lower IC = 8 A, TO-252 (DPAK) package | Surface-mount alternative with reduced current handling but better board-level thermal management in compact layouts | Select when space-constrained PCBs require SMT assembly and max VCEO > 80 V is needed; not pin-compatible with 2N6491. |
| BD711 | VCEO = 80 V, IC = 12 A, TO-126 package, hFE min = 25 at 2 A | Lower power rating (40 W), smaller package, higher gain at low current - suited for driver stages rather than main power switching | Choose for pre-driver or medium-power linear regulation where 15 A capability is unnecessary and TO-126 footprint is preferred. |
Compared with MJD44H11G and BD711, the 2N6491 offers the highest continuous current (15 A) and power dissipation (75 W) in through-hole TO-220, making it optimal for high-reliability industrial switching where thermal mass and serviceability matter.
Availability
2N6491 is available at Aetrix Electronics and suitable for industrial motor control, DC power supply regulation, and AC-DC SMPS auxiliary supply applications requiring stable component supply and long-term manufacturing continuity.
Supply support for 2N6491 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi is a global semiconductor supplier focused on energy-efficient electronics, delivering discrete, analog, logic, and custom devices for automotive, industrial, cloud, and IoT markets.
The 2N6491 belongs to onsemi's complementary silicon power transistor family, engineered for robust general-purpose amplifier and switching use in industrial power systems where reliability, thermal stability, and JEDEC-standard packaging are essential.
FAQ
What is the maximum collector-emitter voltage rating for the 2N6491?
The 2N6491 has a maximum collector-emitter voltage (VCEO) rating of 80 Vdc under open-base conditions. This value is confirmed in the "Maximum Ratings" table of the official onsemi datasheet (Rev. 17, October 2024) and applies specifically to the 2N6491 variant - distinct from the 2N6490's 60 V rating. Exceeding this voltage risks avalanche breakdown and permanent device failure.
Does the 2N6491 have a built-in heatsink tab connection?
Yes, the metal tab on the 2N6491 TO-220 package is electrically connected to the collector terminal (pins 2 and 4). This direct thermal and electrical path enables efficient heat transfer to an external heatsink but requires electrical isolation (e.g., mica washer + nylon screw) if the heatsink is grounded or at a different potential than the collector node in the circuit.
What is the minimum DC current gain (hFE) of the 2N6491 at full rated current?
The 2N6491 guarantees a minimum DC current gain (hFE) of 5.0 when operated at IC = 15 A and VCE = 4.0 Vdc, as specified in the "ELECTRICAL CHARACTERISTICS" table. This defines the worst-case base drive requirement: IB ≥ 3.0 A to ensure saturation under full load, critical for low-loss switching applications.
Is the 2N6491 RoHS compliant and lead-free?
Yes, the 2N6491 is RoHS compliant and lead-free, indicated by the "G" suffix in its ordering code (e.g., 2N6491G) and explicitly stated in the "Features" section of the onsemi datasheet. The device meets EU Directive 2011/65/EU and is suitable for environmentally regulated industrial and consumer end equipment.
How does the 2N6491 differ from the 2N6490 in terms of voltage rating?
The 2N6491 is rated for VCEO = 80 Vdc, while the 2N6490 is rated for VCEO = 60 Vdc - a 20 V difference confirmed in both the "Maximum Ratings" and "ELECTRICAL CHARACTERISTICS" sections of the shared datasheet. This distinction is tied to process and wafer-level binning; the two parts are not interchangeable without verifying circuit voltage margins against the 2N6491's higher rating.
2N6491 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 15 A
- Voltage - Collector Emitter Breakdown (Max):
- 80 V
- Vce Saturation (Max) @ Ib, Ic:
- 3.5V @ 5A, 15A
- Current - Collector Cutoff (Max):
- 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 5A, 4V
- Power - Max:
- 1.8 W
- Frequency - Transition:
- 5MHz
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220
2N6491 FAQ
1.How can I place an order for 2N6491 through Aetrix?
Please submit a Request for Quotation (RFQ) for 2N6491 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2N6491 reliable?
The price and inventory of 2N6491 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2N6491 is usually 5 days.
3.What payment methods are accepted for 2N6491?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2N6491 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2N6491?
2N6491 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2N6491 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2N6491?
For technical support, including 2N6491 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2N6491 requirements.
6.How does Aetrix verify that 2N6491 is sourced from the original manufacturer or authorized distributors?
All 2N6491 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2N6491 meets industry standards.
7.What is the process for return or replacement of 2N6491?
All 2N6491 units undergo pre-shipment inspection (PSI). If there is an issue with 2N6491, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2N6491 part is unused and in its original packaging.
Return procedure for 2N6491:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
2N6491 Tags

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MMBT3906LT1G
onsemi

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Diodes Incorporated

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onsemi

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MMBT3906-7-F
Diodes Incorporated

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Micro Commercial Co

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MMBT2222A-7-F
Diodes Incorporated

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BC846BLT1G
onsemi

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BC847B,215
Nexperia USA Inc.

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SMMBT3904LT1G
onsemi

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MMBT2222A-TP
Micro Commercial Co

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MMBTA06LT1G
onsemi

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onsemi
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