onsemi 2N6497

Overview

2N6497 from onsemi is a high-voltage NPN silicon power transistor in TO-220AB package, rated for 250 V_CEO, 5 A continuous collector current, and 80 W power dissipation at T_C = 25°C. It delivers low V_CE(sat) ≤ 1.0 V at I_C = 2.5 A and supports fast switching with t_r/t_f ≤ 1.0 µs in inverter and switching regulator circuits.

For engineers reviewing the 2N6497 datasheet, pinout, applications, or equivalent options, key selection criteria include sustained voltage capability (V_CEO(sus) ≥ 250 V), DC current gain range (h_FE = 10–75 at I_C = 2.5 A), thermal resistance (R_θJC = 1.56°C/W), and safe operating area under pulsed conditions.

Technical Context

The 2N6497 operates as a single NPN bipolar junction transistor optimized for high-voltage switching applications. Its design emphasizes robust secondary breakdown immunity, validated by SOA curves up to 100 V and 5 A under 1 ms pulses, and thermal stability via low R_θJC.

It features a minimum V_CEO(sus) of 250 Vdc at I_C = 25 mA with zero base drive, and exhibits f_T = 5.0 MHz at I_C = 250 mA, V_CE = 10 V - confirming suitability for medium-frequency switching rather than RF operation.

Key Specifications

Pinout & Package

2N6497 is housed in a TO-220AB package (Case 221A, Style 1) with three leads: emitter (pin 1), base (pin 2), collector (pin 3). The metal tab is electrically connected to the collector and must be isolated from chassis ground unless circuit topology requires common-collector configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJ15003 and BU508A, the 2N6497 offers optimal balance of voltage rating, thermal resistance, and switching speed for 100–200 W switching power supplies - avoiding over-engineering while ensuring SOA compliance at 220 VAC input.

Availability

2N6497 is available at Aetrix Electronics and suitable for switching power supplies, inverters, line-operated amplifiers, and industrial motor controls requiring stable component supply across production lifecycles.

Supply support for 2N6497 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The 2N6497 belongs to onsemi's legacy high-voltage bipolar power transistor family, engineered specifically for reliability in line-powered switching and linear power applications where ruggedness and SOA integrity are critical.

FAQ

What is the maximum continuous collector current rating for the 2N6497?

The 2N6497 has a maximum continuous collector current (I_C) rating of 5.0 Adc at T_C = 25°C. This rating decreases with rising case temperature - derating begins at 0.64 W/°C above 25°C. For reliable long-term operation at elevated temperatures, thermal design must ensure T_C remains within limits to avoid exceeding the 80 W power dissipation ceiling. The 2N6497 must be mounted on an appropriately sized heatsink to sustain this current in real-world conditions.

Does the 2N6497 have a Pb-free version, and how is it marked?

Yes, the Pb-free version of the 2N6497 is designated as 2N6497G. Per the marking diagram in the official datasheet, it is labeled "2N6497G" followed by assembly location (A), year (Y), and work week (WW), e.g., "2N6497GAYWW". The "G" suffix explicitly indicates compliance with RoHS Directive 2011/65/EU and onsemi's Pb-free packaging standard. Both 2N6497 and 2N6497G share identical electrical specifications and TO-220AB mechanical form factor.

What is the safe operating area (SOA) limitation for the 2N6497 at 100 V_CE?

At V_CE = 100 V, the 2N6497's SOA curve (Figure 4) permits up to 5.0 A for pulse widths ≤ 1 ms, decreasing to ~2.5 A for 10 ms pulses and ~0.8 A for DC operation. This reflects second-breakdown and thermal constraints - not just average power. The 2N6497 must never be operated beyond these boundaries without verifying transient thermal response using Figure 3. Exceeding SOA risks immediate parametric shift or catastrophic failure.

How does the DC current gain (h_FE) of the 2N6497 vary with collector current?

The 2N6497 exhibits h_FE = 10–75 at I_C = 2.5 A and V_CE = 10 V, but drops to h_FE = 3.0–75 at I_C = 5.0 A under same conditions. Figure 7 confirms gain peaks near 1–2 A and declines at both low (<100 mA) and high (>4 A) currents. Designers must verify base drive capability across this range - especially at I_C = 5 A, where minimum h_FE of 3.0 demands ≥1.7 A base current for saturation, making the 2N6497 unsuitable for low-drive microcontroller direct drive.

Can the 2N6497 be used in avalanche mode, and what is its V_CEO(sus) specification?

The 2N6497 is specified with V_CEO(sus) = 250 Vdc (minimum) at I_C = 25 mA and I_B = 0 - a guaranteed sustaining voltage under non-destructive avalanche conditions. This parameter validates controlled avalanche operation for limited-energy transients, such as in snubberless flyback designs. However, repetitive avalanche stress is not characterized in the datasheet, so the 2N6497 should not be routinely operated in sustained avalanche; its SOA and thermal limits still apply during any avalanche event.